GA1F4Z NEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
MEDIUM SPEED SWITCHING | | RESISTOR BUILT-IN TYPE NPN TRANSISTOR 7 _ - FEATURES PACKAGE DIMENSIONS © Resistor Built-in TYPE in millimeters c 2.1+0.1 8 1.25+0.1 Ry = 22kQ aa R, El} | E xc) gq? © Complementary to GN1F4Z S49) Hien - -14 asl oo a 8 33] ABSOLUTE MAXIMUM RATINGS E{+- | be Maximum Voltages and Currents (Ta =25 °C) Collector to Base Voltage Vcso 60 v | Collector to Emitter Voltage Vceo 50 Vv ” Marking Emitter to Base Voltage VeBo 5 Vv r ) \\ 3, ; | Collector Current (DC) Io 100 mA 3 36 | Collector Current (Pulse) Io 200 mA a 3 { Maximum Power Dissipation S, ° . ' | Total Power Dissipation 3 | at 25 °C Ambient Temperature Pr 150 mw 1: Emitter 2 | Maximum Temperatures 3 ei ector ° | Junction Temperature Tj 150 °c — — a Storage Temperature Range Tstg —55to+150 °C @ ELECTRICAL CHARACTERISTICS (Ta = 25 °C) | * Pulsed: PW < 350 us, Duty Cycle < 2% | @ hee Classification | [_wonine [te [es [ed | ee NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988
__GA1F4Z NEC scsctnow vevice TYPICAL CHARACTERISTICS (Ta = 25 °C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE q 200 50 re Z , EERE EH + pe ett E iso} || ae a att B oto | | é yt ee eof ENT TTT E Woo tek 8 3 a oot tT tT EAL I | Sse 2 ot | LINE Eaa| A 2 rt tte N Eee Sey ie Bo | SSS | too ttt tT N Tt . ASRREREAEE | a+} TTT EY Zn | weet tt LEX J Pye TTT tt tf ) =200 20 40 60 80 100 120 140 160 180 0 20 40 60 80 10 @ | Tg—Ambient Temperature —C VcE—Collector to Emitter Voltage—V. ) COLLECTOR TO EMITTER VOLTAGE vs. OC CURRENT GAIN vs. | SOteeron Zo SMa OSS RREN Nets | “TI in es a || ce = lA 4 04! [| |] TI TT iy Tis 2000 3 < Fe HH See ee , SS Sa ELIT TT TY) Al ee is! é | 8 eZee od TL anne t
5 Oecd * veoh ft tit | tL
Bos 11 == eae > La a a a 8 Z2 a a A Wa 8 | Z| es Os ee
7 Pitt TI sot
0 10 20 30 40 50 10 3.0 10 30 100 s I¢~Collector Current mA Ic Collector Current mA e COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT ——— sss FF RR ST eon | eee iii 1 a a a 8 ee 5 [— jamns! Pra % re | nn Tr FA ce a CoH Cerro 7c 2 LTE ED . | NS ZZ i Yi Zl i 5 = | 2 SSS = a 4 a eee fos Pt HH Sn ae a cel oe eT 003 eet > Z a elle oot | TUT TT e@ * wnt LE ELLIIIE ET A one 30 10 30 T00 or 2 5 1020 50 ‘100 I¢—Collector Current —mA Ic—Collector Current—mA ee
INPUT VOLTAGE AMBIENT TEMPERATURE 1000 po 50) | SSF vce-50v BS55S= 7a | ee | | 3oof ft ma « ~-PtLtTT Ty rrr ry 40 eo tI T TT | ed el el 7” & ght bp 2 s LTT TT PT Try 3 c3 = 20 2 eee O OR = a se Se eee oe oe or oe oo sop) ft} 10 pt PP ay ry ry vol LET ET TT TT ; r ° 0.2 04 06 08 1.0 1.2 —25 0 25 50 75 700
4 Vin~ Input Voltage ~V Ta—Ambient Temperature —°C
TC—2165 April 1988M Printed in. Japan