GA1F4N NEC | Alldatasheet
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RESISTOR BUILT-IN TYPE NPN TRANSISTOR a oe : FEATURES PACKAGE DIMENSIONS © Resistors Built-in TYPE in millimeters : c 2140.1 i B e | ' Ro = 47kQ wo Ro : El} | & als. gq] © Complementary to GN1IF4N 3|F5} 5 i allt] Fs a) 3 33] ABSOLUTE MAXIMUM RATINGS E{14- | be Maximum Voltages and Currents (Ta = 25 °C) Collector to Base Voltage Vcso 60 Vv i Collector to Emitter Voltage Vceo 50 v Marking ! Emitter to Base Voltage VesBo 5 Vv r ) 5. , Collector Current (DC) Ic 100 mA 3 3s | Collector Current (Pulse) le 200 mA a 4 |. Maximum Power Dissipation oi Total Power Dissipation Fy i at 25 °C Ambient Temperature Py 150 mw 1: Emitter 2 H Maximum Temperatures 2: bard °| Junction Temperature T 150 °c | 3: Collector Marking: L35_| ; ° a anne Storage Temperature Range Tstg —55 to +150 Cc ELECTRICAL CHARACTERISTICS (Ta = 25 °C) | CHARACTERISTIC SYMBOL [ min. | Tye. | max. | UNIT TEST CONDITIONS Collector Cutoff Current IcBo [|__| 100 | nA_| Vcp=50V,Ig=0 | DC Current Gain hfe" | 200 | 30 | | Vee = 5.0 V, Ig = 5.0 mA Input Resistor [Rr | 22.0 * Pulsed: PW < 350 us, Duty Cycle <2 % NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988
GA1FA4N . NEC tuectaon sevice TYPICAL CHARACTERISTICS (T, = 25 °C) AMBIENT TEMPERATURE COLLECTOR TO EMITTEA VOLTAGE @ 200 50 = AAA SLL Pele .s6e>—_ aan ann RH a0 4888r552= pm NY pol fT ht Ld
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% 100 \\ N 3 tA H+ H PEERS oe BCE ree REE bee tH ¢ 40 Co aaa ~ olf et ° FEE aeEEEaeee 5 IN yr TrTT TT Ty t | . 200 20 40 60 80 100 120 140 160 180 oO 20 4.0 6.0 8.0 10 e@: Ta—Ambient Temperature —"C VE —Collector to Emitter Voltage—V “ | COLLECTOR To EMITTER VOLTAGE vs. DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 0.5 100 — ooo
7 SSS ens |
[ty ET Ty yyy Sea > ae | 500 Pa ee HH T o4 [| oe PCOCCme~ yr) ees pel a= ert - ewZaillll ll = 4 Littl yt y Bo AT 2 6 BASE Sai | 1 TA | | 2 FSS SSS 8 (| TV WT] 7 sof} 3 we 0 or 1 [| YET ee Om gon naan | | eet * I¢—Collector Current—mA_ Ic— Collector Current—mA COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. 4 COLLECTOR CURRENT COLLECTOR CURRENT 1 =SSs—| ooo | > eS SO | 5 oo Eo 11
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Z tr ° ? pe ee | 0.01 osCLi Try rr 2 I¢—Collector Current— mA. I¢—Collector Current—mA. ee
NEC utctron vevice . GA1F4N @ COLLECTOR CURRENT vs. RESISTOR vs. INPUT VOLTAGE AMBIENT TEMPERATURE 1000 rr 100, SSSS='2='2= =e | ae oe ST en ee eee 80 aol | | | TT Py PT esses (Te i — MRP pe pepe 5 Pt | | a 3 [foo € se ee 2 | | ge ee = 40
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Sy ° ° 10 bp tt o VER pp ppp tes a 2 ae ee oo | ° @ a “05875100 CCOPOCALE Eee TaAmbient Temperature ~"C cor + ET vo LET TT | 0.2 04 06 08 10 12 14 16 Vin—Input Voltage-V S SWITCHING TIME vs. COLLECTOR CURRENT ed [piste TTT | veo=sv SH] PW=2 us p10 PENT eRe di = eS OS OO ©@ © os Pete a /N BOS eT | 3 Pet
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: o1 Bet | Il | SS zettee erat oos IEE 10 2.0 5.0 10 20 50 100 I¢—Collector Current—mA.
__GAIFAN ore oe al pe TC—2164 April 1988M Printed in Japan pried indepen