GA1F4M RENESAS | Alldatasheet
Document overview
- Manufacturer or author: Renesas Electronics Corporation
- PDF pages: 4
Technical content
DATA SHEET : 7tENESAS — o* _ — ' / SILICON TRANSISTOR TS GA1F4M | MEDIUM SPEED SWITCHING | } RESISTOR BUILT-IN TYPE NPN TRANSISTOR a ~~ FEATURES. PACKAGE DIMENSIONS | @ Resistors Built-in TYPE in millimeters Cc 2140.1 | B . 1.2540.1 i Ry = 22 ko | i Ri Rp = 22 kQ Ft "Oe eed gq © Complementary to GN1FAM 3k} 6 He - -fA 9]S1 io} HH als) a3 ABSOLUTE MAXIMUM RATINGS =E | Ed Maximum Voltages and Currents (Ta=25 °C) Collector to Base Voltage Veso 60 Vv ! Collector to Emitter Voltage Vceo 50 v Marking | Emitter to Base Voltage Veso 10 v S | Collector Current (DC) Io 100 mA 3 3 : Collector Current (Pulse) le 200 mA z 3 | Maximum Power Dissipation . = 1 Total Power Dissipation 3 | at 25 °C Ambient Temperature Py 150 mW 1: Emitter 2 Maximum Temperatures 2 : B00 actor ° ; | Junction Temperature Tj 150 °c neil Morking: USS j Storage Temperature Range Tas —55to+150 °C ELECTRICAL CHARACTERISTICS (T, =25 °C) [Granacrenisne [srweou [win [TYP [wax [unt | TesTcoworrions———_—| [eoracorGuottcuren [reso [| | 10 | wa |Vvepr@viie-o | | [oc curenGin —direy | | | ves || Voess0v.tgnsoma [occuven Gan [rrex” [90 | wo | |_| vee=S0v.tgrsoma [ HistLevel input Vottoon —|vin® | 40 | 16 | |v | Vce=02v,ic=80ma [inewresnr itm, | tse | mo fe fe [| a * Pulsed: PW < 350 us, Duty Cycle = 2% NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988
TYPICAL CHARACTERISTICS (Ta = 25°C) COLLECTOR CURRENT vs. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE ‘o Lt | yy “CT Lite T TTL ee OO A |i é 160 = 40) = i -_] V § AE - | er TPEKEELEL oa ah TL 2 c i 2 120 \\ I ae 4 “Hy - 4 50 uh 7 |] < 80 3 2 : 3 NOE a] An oe 7 aa : CNT ree Tf FP errrry ee Kee . f-— — SEC ec aeeee eee ° IN rrTTrTrttyT yt} | -200 20 40 60 80 100 120 140 160 180 i) 20 40 6.0 8.0 10 Ta—Ambient Temperature —"C Voce ~ Collector to Emitter Voltage—V ! COLLECTOR TO EMITTER VOLTAGE vs. OC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT “COOL ESS pS ns | - PPP EH ay re ee eaeennat COCO), FR SC ey) bt ia 5 100 | a / 8 CR FH 2 4 | | | Loh 8 Ew 35 4 H —- At
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8 [zr Tt tt 2 is oO 10 20 30 40 50 1.0 2.0 5.0 10 20 50 100 Ig~Collector Current —mA Ig~Collector Current—mA. COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. — so i—=—ooe FAR > Sea | a ae eg a a . wo | ET et PI fed EU) sot TT TT Leese il 5 el 2 eee A B opt th Pawan 5 sof A
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COLLECTOR CURRENT vs. RESISTOR vs. INPUT VOLTAGE AMBIENT TEMPERATURE re [ew== sas ==2=: pep . Pt FH | iy Amma 4 © op ef fesp es || ld ee eee See ee i RSE SSR aes < 29 3 as se or oo oe t 3 ee ey ee SEH 2 oe ee ipo Sdt iA fit of
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=== ee a oe es i ptAt a ey otf TET TT , 04 06 08 10 12 14 1.6 —25 o 25 50 75 100 Vin~Input Voltage—V Ta—Ambient Temperature—"C SWITCHING TIME vs. COLLECTOR CURRENT i a A PT TTT | veo=s v pT ne | 22 20 a Duty Cycles 2 % et IN NU 1.0-—. tot Soot BO ESS SSeS sa Sees oe cence 2 of raat a a rn 2 [TT Pest ? eee 1 od [——rrT | 0. peters} ———<s... oe aac ss oosL_— 1 TT TT rr) | 10 20 5.0 10 20 50 100 “ | I¢~Collector Current—mA a
[EEE To-2163 . April 1988M Printed in Japan ne |