GA1F4M NEC | Alldatasheet

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DATA SHEET ' NEC / SILICON TRANSISTOR @ / GA1F4M | MEDIUM SPEED SWITCHING | } RESISTOR BUILT-IN TYPE NPN TRANSISTOR ee ~~~) FEATURES PACKAGE DIMENSIONS © Resistors Built-in TYPE in millimeters Cc 21401 | B 1.25+0.1 Ry = 22 KO a | i R, Rp = 22 kQ . a ! ot alsd 3 © Complementary to GN1F4M 389] o| LH alah s - “Ho si a | a3 ABSOLUTE MAXIMUM RATINGS FT | 3 Maximum Voltages and Currents (Ta=25 °C) i Collector to Base Voltage Veo 60 v Collector to Emitter Voltage VcEo 50 Vv - o Marking | Emitter to Base Voltage VeBo 10 Vv r ) 3, | Collector Current (DC) Io 100 mA 3 8 Collector Current (Pulse) le 200 mA 4 3 \\ Maximum Power Dissipation 2 | Total Power Dissipation 3 i at 25 °C Ambient Temperature Pr 150 mw 1: Emitter 2 Maximum Temperatures 2 : Base © | Junction Temperature Tj 150 °c : Collector Marking: L33 oo Lee a _ ~! Storage Temperature Range Tstg —55 to +150 Cc " ELECTRICAL CHARACTERISTICS (T, =25 °C) [eraracrenisnie [svwaor [wn [Te [wax [uw | _resrconpmions | [caterer Curt Covent fleso |__| | 100 | A | Ves=@vie-0 | [oc Curent Guin Sd ey | a | 95 || Voe=s0v.igns0maA [occurenrGan_[rrea® [90 | a0 | | | vee=sov.icreoma | Pinowraainor ms | se | mao | ose fo | [Resstorfao——S~d A fos fo fm [| * Pulsed: PW < 350 us, Duty Cycle = 2% NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988 oe

___GAIFAM ee NEC tectron oevice TYPICAL CHARACTERISTICS (T, = 25 °c) COLLECTOR CURRENT r AMBIENT TEMPERATURE SOctEcTOR TO EMITTER VOLTAGE 200 50, — Ls a (TTT tty ty ys as z pf feet tt mn ee acc 2 140 BN E | 1

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8 120 2 30 A —

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100 = } 4 [| : XI |_| mal, aon | 2 a0 \\ 8 a | : PEN TTI “Po ee a of . ECCS seeeeeeees | ° IN rrcrrrrtty tf os -200 20 40 60 80 100 120 140 160 180 oO 2.0 40 6.0 8.0 10 @ Ta—Ambient Temperature —°C VcE—Collector to Emitter Voltage—V | COLLECTOR TO EMITTER VOLTAGE wt. be CURRENT GAIN ws. COLLECTOR CURRENT COLLECTOR CURRENT 05 1000—— I ===: ——— COOL SSS Saw eS NS SO OS OS Oe | _ COPECO Pr SSS 7 04 [| ee ee sense PCOCEEE EC), ERR ee » 2 ppp ie 8 a0 een Zeal r ) B 03 A 2 y es &§ y S100) — > ttl li As (| 9 Aa » 02] y Cy ere 5 rit iyY Vann eS ee 8 I~! & Ae 8 rt | eee A | Ti TT) 8° DEPT Cee oot TEE > ZA | Att tt tt ty d eo o 10 20 30 40 50 10 20 5.0 10 20 50 100 I¢—Collector Current—mA \\I¢—Collector Current —mA COLLECTOR SATURATION VOLTAGE vs INPUT VOLTAGE vs 10— rr 50) ESE c-10 | a A | > ESE EHH oe a @ 0 sf rrr [| {i a s a A OO 0 * 20 ee 5 od | LU TT = VoE=02 V z ee eee eee ar aeeee 2 & FE -F-F eet — Bo po} fitiiy EH > sop —t Pri AA 3 ——— assess Zee 3 Pt fico | Bo eee amsstt re 2 3 oost—_}_| | Ter menses) D NT All| ° Po ee 20 | A re —— all ll cacti BS -—— ees Es eae — rr) 0.01 ost. J Pri) 10 20 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100 2 \\c~Collector Current—mA \\g—Callector Current—mA

@ COLLECTOR CURRENT vs. RESISTOR vs. INPUT VOLTAGE AMBIENT TEMPERATURE | | ea eee ee a os oo ie re | ee < ee 40 Sg Ley | | fef ee ||

5 CESS SS SSS ¢

| ee Se eee eee eens <3 3 a i A fe L 5 aR 2 es LETT TAT yyy 3 S e 2 ee on el a A | A ee Ss eee | 10} es ee ee ee ee FEA et _. T/T TT ETT Q == 04 06 08 1.0 12 14 16 25 0 25 50 75 100 Vin~Input Voltage—V T,—Ambient Temperature—"C SWITCHING TIME vs COLLECTOR CURRENT i a PTT eos v PS ae |

20 PT St8 | Duty Cycles 2 %

: ‘ NT & Ob g VES NS ==. el La ra we os 1 tT Pi yw BO ee i ee ee ep eee tod eeoooo4! a sailill iT | be eS ee es Se eee _ re @ oosL——_ tT TT TT 10 20 5.0 10 20 50 100 « I¢—Collector Current—mA a

__GA1F4M—— NEC ascron vevice ss pri 1988M | Printed in Japan