GA1A4Z NEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
NEC / Silicon Transistor | MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR ) ee FEATURES : PACKAGE DIMENSIONS | @ Resistor Built-in TYPE c in millimeters 8 Ry =10k2 2.1401 | Ry 1.2540.1 E e | © Complementary to GN1A4Z ET} | we gq? | | ABSOLUTE MAXIMUM RATINGS ara . A Maximum Voltages and Currents (Tq = 25 °C) ale qa a3, Collector to Base Voltage - Veso 60 v be rT . Ey Collector to Emitter Voltage Vceo 50 v ° i Emitter to Base Voltage VeBo 5 Vv Collector Current (DC) Io 100 mA Collector Current (Pulse) Io 200 mA Marking | - ae @ 2 Maximum Power Dissipation a 38 Total Power Dissipation zy iy at 25 °C Ambient Temperature Py 150 mw 3 3 ! Maximum Temperatures a | Junction Temperature Tj 150 °c s ° 1: Emitter 2 Storage Temperature Range Tstg —55 to +150 Cc 2: Base ° | | 9: Collector | ELECTRICAL CHARACTERISTICS (T, = 25 °C) Collector Cutoff Current 'cBo || 100 | ona | Vep=50V,1e=0 ) DC Current Gain hret* ws | 340 | 600 | | Vce=5.0V,I¢=5.0mA Collector Saturation Voitage | VcE(sat)” 02 v Ig = 5.0 MA, Ig = 0.25 mA ‘Low-Level Input Voltage vit os | ov VcE=5.0V,I¢=100HA High-Level Input Voltage | Vin* [| os | v VcE = 0.2 V, I= 5.0mA Input Resistor Ry 13.0 ka * Pulsed: PW S 350 us, Duty Cycle 2% hre Classification | @ [ marking | tev [tse [tsa [_tre1_| 13510270 | 200 to 400 | 300 to 600 | NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988
TYPICAL CHARACTERISTICS (T, = 25 °c) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT AMBIENT TEMPERATURE COLLECTOR TO EMITTER, VOLTAGE @ _LLLII I Tie | = 10 ett Ly zo | ttt sf | Lee TT | Pe err Fs | [ : £ iol 1 ITN e | es a KEEL TTT a, TLL Be PENSEEELH ‘| aaeeeceee 6 5 3% Md ne (ne Ee Pitt 5 7 Ae eof. | | TIN | IT 3 [eo Be EERE ie GeREREe : cs) a a SSREEEEAES N PEE TT ttt | 0 0 20 40 60 80 100 120 140 160 180 ° 20 40 60 30 0 Ta—Ambient Temperature —°C VcE—Collector to Emitter Voltage—V t ) COLLECTOR TO EMITTER VOLTAGE vs. DC CURRENT GAIN vs. | COLLECTOR CURRENT COLLECTOR CURRENT | “TTT | UE ULL TT T_T Tne] peLL TY Rll 3 © -— HH > s SS NS OE = Tl vsv) | fv] | |_| a os on oe Z 03 § ——— ee e LLL IA VT TT tf titi rots 6©@ es LEE VZ ATT TT | 5 02 i, \\7 Z\\ 8 g LAs E | 4 8 lA FS > ee ee ee ee LV Et A VA | | | | sol LCE oO 10 20 30 40 50 10 3.0 10 30 100 lg—Collector Current mA Ig—Collector Current mA @ 10, COLLECTOR CURRENT — 10 — COLLECTOR CURRENT ___s Ee] coon | ES aa A a ee 5 ee ee & as A a A 2 fo . foe § LTT Eh . LTE ew B 01-4 +—— aia 3 ee} + ee ee ea ES St g eS OS | 1 — se a | 2 re £05 ee 8 ee TH * Set cc acai Ul Poo | gE eT TT 02 * sok LT TIN | PT TT) @ ° ier 3.0 10 30 100 ° 1 2 5 10 20 so 100 Ig—Collector Current—mA Ig—Collector Current—mA Po
NEC tuectron vevice GA1A4Z COLLECTOR CURRENT vs. RESISTOR vs. 1000 ——>— INPUT VOLTAGE 20 AMBIENT TEMPERATURE SS OS | Ey) a A SG A aes a | 16 Fe ET OO g === === ——— | ey
6 Seee Se Peeee eed 5
2 OU i
8 oj fe al | e 2° es oe oe oe os oe oe oe Se 30 a A | 4 a ee LL ETT ETE TTT ; @ ° 02 04 06 08 10 12 25 0 25 50 75 100 Vin—Input Voltage—V Ta—Ambient Temperature—"C ° |
GA1A4Z ; NEC sascrnm never LO oe Sr TC—2162 April 1988M Printed in Japan fe Primi tapan