GA1A4P NEC | Alldatasheet
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NEC / _ Siticon TRANSISTOR | = GA1A4P ' 1 | OE a FEATURES | i PACKAGE DIMENSIONS @ Resistors Built-in TYPE in millimeters c | 2140.1 | B
1.25401 Ry = 10kQ |
— ' | Ry Ro =47kQ | ' 6 rH wD de a Xis¢] SI | | 3ltF go | Ho © Complementary to GN1A4P Zien : + - +A aloha al°'8 3. i . } ed ‘ 5a | ABSOLUTE MAXIMUM RATINGS ° i Maximum Voltages and Currents (Tq = 25 °C) | Collector to Base Voltage Vego 60 v Mori Collector to Emitter Voltage Vceo 50 v " 2 anne Emitter to Base Voltage Veso 5 v ! a 38 | Collector Current (DC) Io 100 mA S to | Collector Current (Pulse) Ic 200 mA 8 G Maximum Power Dissipation . i a | Total Power Dissipation S| ! at 25 °C Ambient Temperature Py 150 mw 1: Emitter 2 . 2igme ° | Maximum Temperatures 3 + Collector Marking: L34 | Junction Temperature Tj 150 °c ~ ee ~ — Storage Temperature Range Tstg -55to+150 °C ® ELECTRICAL CHARACTERISTICS (T, = 25 °C) [—exanacreniene | vwaoc | ww [ye] wax [ut | Tasrcoworrions | | DC Current Gain 85 210 340 | | Vce=5.0V,1¢=5.0mA DC Current Gain hrEQ* 9 | 370 | | | Vce=80V,Ic-50mA Collector Saturation Voltage | VcE(sat)* | 004 v Ic = 5.0 MA, Ig = 0.25 mA Low-Level Input Voltage Vict 0.65 v Vee = 5.0 V, Ic = 100 vA High-Level Input Voltage Vin® 3.0 oso | | | Vee =02V,I¢=5.0mA | @ * Pulsed: PW <350 us, Duty Cycle $2% NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988
TYPICAL CHARACTERISTICS (T, = 25 °C) : ifs - TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. 200 50 COLLECTOR TO Euurvenwoerace wot tt tt Ty por7, eee ET TT | Foot | | ttt | jt E {| o_o 160 40 ——t 8 oto | TET TT s Lf TT a) ae E aot] a PE APT TT = A [eo % 120 \\ .j 5 ao fA —— a £ PLATE /aeeeeee 2 0 I} | | | (SS zo tT TIN TTT | A || e 6 ° a — Le Hite it AH a LLELEL TTX I ne 200 20 40 60 80 100 120 140 160 180 0 20 40 6.0 80 10 _ Vc_E—Collector to Emitter Voltage—V Ta—Ambient Temperature —°C e COLLECTOR TO EMITTER VOLTAGE vs. DC CURRENT GAIN vs.
05 COLLECTOR CURRENT 1000 COLLECTOR CURRENT
a A OO & os [of vee | ed ea PCO . ess eee coee 8 root _—| | pee fT Eos < ea 3 i z ; eseneee4ee oe 2 | Sm LA eth Ll | et EIA YY | a Ato 5 . 1 ae f || | VAY] | ; a) a a Es 4 a a a 1 | Ae es
8 GF el
2007 4eneeeee 20 ! AL oT TT 0 20 40 60 80 100 10 20 50 10 20 50 100 I¢—Collector Current —mA lg—Collector Current —mA e | < COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. y 19 COLLECTOR CURRENT 20 COLLECTOR CURRENT ; —— ee
1 Sea CU TET)
Bose 8S SSS | | s ~ yi rn > eee AH | s ot LET PTT 2 tt re tH = op & FHT " vA iat | s 2 ~oPPrt aeniil F J = oot | LETT A TTT
5 ES EF 3 7
g — ae oe ss cn V7. ae | £ s es aes \\ LH S 00st ae 0) a a oe ees 5 ee ae ieee 2 eet Cotiil 2 teatime int ec af 11 r oon 3 rr 30 100 10-20 5.0 10 20 50 100 j ° ° ° Ig—Collector Current —mA. | \\¢—Collector Current —mA. | 2 | Ce |
COLLECTOR CURRENT vs. SWITCHING TIME vs. 1000 pp tNPUT VOLTAGE so COLLECTOR CURRENT SEF vee-s0v | : |—-- Vin=5¥ oe oa ioe aoe eee Pate oi be pooh PRE ee lime | « ELT yy Ty 20 Ns So LT afley et LET EN | ‘ 100 Ff NV 2 of —| \\ “ | 5 eee ee a a —— ase ees [s) | A Ae ee ee to —ee a e) Seeger eee Foos-— | i ee | gf Tae
4 COCO 2 eet
8 a — , (SSS SSS Ss 2 of ee ae a | Eee o1 [L | . es SSS ESHHE Oar a 10 oosC__ tT PT Te ° 02 04 06 08 10 12 10 20 5.0 10 20 50 100
6 Vin—Input Voltage —V ig—Collector Current —ma
e TC-—2161 ) April 1988M Printed in Japan ee