GA1A4M-T1

GA1A4M NEC | Alldatasheet

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| | | MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR [ ~ as FEATURES | PACKAGE DIMENSIONS | © Resistors Built-in TYPE in millimeters \\ c 21401 i 8 i 1.25401 Ry = 10k2 | j Ry R2 = 10kQ ©@ ce Re de alsa gq] | @ Complementary to GN1A4M aloha \\ a gl | 33 | ABSOLUTE MAXIMUM RATINGS. ET ‘ bd i Maximum Voltages and Currents (Ta=25 °C) Collector to Base Voltage Vcso 60 Vv | Collector to Emitter Voltage Vceo 50 Vv { © Marking | Emitter to Base Voltage VeBo 10 Vv @ 5. a ' Collector Current (DC) le 100 mA (og 35, Collector Current (Pulse) Ic 200 mA a 3 | Maximum Power Dissipation | Total Power Dissipation Zl { at 25 °C Ambient Temperature Py 150 mW 1: Emitter 2 Maximum Temperatures

3 Eee tor Or Marking: 133 | Junction Temperature Tj 150 *c

— — | Storage Temperature Range Tstg —55 to +150 c ELECTRICAL CHARACTERISTICS (Ta = 25 °C) [occu cen wer | 28 | | 100 |_| vee=soviic=sdma | [occurenecan | rea? | a> | 290 || | vee=sov.tcreoma [cats nvraion Varo | Voewwa® | | 098 | 02 |v [ie=80mAig=025ma—| * Pulsed: PW < 350 us, Duty Cycle < 2% NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988

GA1A4M _ NEC ceectnonewce TYPICAL CHARACTERISTICS (Tg = 25 °c) ITAL POWER DISSIPATION e@ 200 50, -_—, a, wot | ttt tty Li fer] TE rae a | fer | = 160 aT +—| a se foes 8 yg hI 2 Lf 4 Te 7A =an8 Ot = N aan 5 100 [| Nepere) 3 fee tooo EEE é 2 | 2 eee eRe ores i & £ « | AZ 10) 100 uA 20 \\ ‘2a Por) CARR 0 fer | tT | e 200 20 40 60 80 100 120 140 160 180 0 2 rn 6 ry To 4 Ta—Ambient Temperature °C VcE~Collector to Emitter Voltage—V COLLECTOR TO EMITTER VOLTAGE vs. DC CURRENT GAIN vs. SOLLESTSR cOaRUNT Coe ee ONT TT a 500 Coo oo . Pet ta LTT Lag | ee lll : tt Wee , A e 5 od id as” ae ere 2 eee PTL De ie |] oF aaa

2 Co on 8

~ fF. g tty H 8 [AA 3 £ bg | LTT Ty

8 A = 20)

#uneyp2enen a all O 02 it g | part TT 1H ra eee eee eeeeiit aii li ttt tl st EHH tt EE e o 20 40 60 80 100 1.0 2.0 5.0 10 20 50 100 I¢—Collector Current mA I¢~ Collector Current mA COLLECTOR SATURATION VOLTAGE ws INPUT VOLTAGE vs, ag, bottegron cunmEAT . Cee SSR SORBENT a ee Tron . ee P= et

3 MESSE oot | TL TT

2 See Ere

§ L 10] — a oo os ae a ; Saag 2 = “ 2 | CTT meen 2 ot 1 LLU [eed et a ar | 3 WH i on 7 OR | 3 RAs 3 LH ee 3% Er 4A © oo —| LI

1 ESSA Se @

Basti oc: a. alll 3 00s Ue BO er ore * eh Saas esiiit

0.02 L_ | TT LTT os TTT TT)

10 2.0 5.0 10 20 50 100 10 20 5.0 10 20 50 100

2 I¢—Collector Current—mA I¢—Collector Current—mA

r COLLECTOR CURRENT vs. RESISTOR vs. INPUT VOLTAGE AMBIENT TEMPERATURE 1000 ——— aaa! eee ae 70 [voe=05 v SS ae ea oo oe ae es ey i 9 Td eee | Pees 2 ¢ § B= ee 3 x 3 a ee 5 : i ee 3 i oe ee a é | ee Aa - | rT oo oe Fog o Fee ~ Se 2 eS a A a SS A A A SY |S 4] ee) ee ie CTT yr ty ty ty | @ oL LIFT TAT TTT 04 0.6 08 1.0 12 14 -25 oO 25 50 75 100 Vin—Input Voltage-V Ta—Ambient Temperature—"C | SWITCHING TIME vs. COLLECTOR CURRENT i PT | vooss v 2 us eof tT ee Duty Gyles? % e JJwNg Bo =e FH 2 of Ao g Pf a § EP Paes a Sot | TT eet TT : jee pi LOM ole SSSEE Een | @ a ‘ 10 20 5.0 10 20 50 100 ) lg—Collector Current—mA

GA! A4M NEC ELECTRON DEVICE Tc-2160 April 1988M Printed in Japan eo ;