GA1A3Q NEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

DATA SHEET | NEC / |. Silicon TRANSISTOR © / GA1A30 _— | MEDIUM SPEED SWITCHING | RESISTOR BUILT-IN TYPE NPN TRANSISTOR OO FEATURES : PACKAGE DIMENSIONS | @ Resistors Built-in TYPE ; in millimeters c 2.1401 8B 1.25+0.1 Ry =1.0k2 i Rr Ro = 10k2 tC ) ry | R2 E also 8 | @ Complementary to GN1A3Q Pitas) L4 He ~ “Try alalo “i qa 33 ABSOLUTE MAXIMUM RATINGS ET | S| Maximum Voltages and Currents (T, = 25 °C) | Collector to Base Voltage Vcso 60 Vv Collector to Emitter Voltage Vceo 50 Vv - ‘Marking | Emitter to Base Voltage VeBo 5 Vv e@ 3 a Collector Current (DC) le 100 mA Ig 338 : Collector Current (Pulse) lo 200 mA FY 3 | Maximum Power Dissipation 2 i Total Power Dissipation 3 i at 25 °C Ambient Temperature Pr 150 mw 1: Emitter 2 | Maximum Temperatures 2: Base °| i} a 9, Junction Temperature Tj 150 Cc 3: Collector Marking: L83 | Si ps , °, — cain 4 storage Temperature Range Tstg —55 to +150 Cc "ELECTRICAL CHARACTERISTICS (T, = 25 °C) [—characrenionic | syweou [wim | we | wax [unt | vesvoowpmons ‘| | 100 | a | Vep=eoviewo [inoueResnor my || [esreior Sided | Storage Time tg | Pos tke | @ * Pulsed: PW S350 us, Duty Cycle S 2% NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1988

TYPICAL CHARACTERISTICS (T, = 25 °C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs.

200 AMBIENT TEMPERATURE 60 COLLECTOR TO EMITTER VOLTAGE @

  • = — or |} EP yy TI | | fotot TT E+] pt 7s ee PEER ET <"f aT : \\ | : OLE Spo 5) aunianae | é 5 B te 7) (a a 80 oo | por 5 60 8 Pee etal | Ne an an aaa a 40 10 ——+ — \\ ASnGLGeeee BN anES LORE 0 0 20 40 60 80 100 120 140 160 180 ° 2 4 6 ry 10 Ty—Aribient Temperature —"C VeE~Collector to Emitter Voltage—V e COLLECTOR TO EMITTER VOLTAGE vs. OC CURRENT GAIN vs. 05. COLLECTOR CURRENT 500 COLLECTOR CURRENT | | [ vee-sow FT Vce=5.0V > [ttt Ltt Ee & os ea] ae zoo —| LITT | ee P4 £ . Fe all ZB 03) 5 ee oS ce oe see | i= Yt ttf i 5 a EO OP “| w So sf} —P Trev)

2 Pitt} tty] ig g “COP ry

SEED ® Zn ee QB il ST tT perry tt TT | opt EeTeP PTT eee siiieeeeeii — sot) oO 20 40 60 80 100 10 20 5.0 10 20 50 100 '¢—Collector Current —mA Ig—Collector Current mA @ COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. to COLLECTOR CURRENT 10 COLLECTOR CURRENT SSSaa—— = —— as esse eee

7 See oes es sos oe aoe oe es |

@ a s——_ eee a a a a a 3 osp_t tT TT TT a a | | s LLU TU ee eee S72) s YW & (Wy og, mall ., vs 1 ae ec auers| | 3 SSS Ee aa 2 EGSSee are re ee £ ee i a a a S a OA

8 A E

? oosf | a a Ee ie PTI | | a Perr Ty oat — HP ET sok | TANI ETI ie O41 Seay 30 10 30 100 1 2 5 10 20 50 100 I¢—Collector Current mA Ic Collector Current —mA

NEC uuctron vevice GA1A30. eS COLLECTOR CURRENT vs. RESISTOR vs. | ineUT VOLTAGE AMBieNT TEMPERATURE

00 SS 20 20

SSS SSE vce-sov | | z===—= == SS a A . COOCOge eee 6 16 i 2 : ¢ | 8 BPRS EG E § SEEPS SSSs aa 7 3 ° Eee i 2 | So | = 3 2 2 o | $ ot tlt Tt ttt zo - 3 === /2=====——_ b & oe i == é === oa es 4 LTT ry FAY wL LILIA TTT TTT oO 02 04 06 08 10 12 -25 Oo 25 50 75 100 @ Vin—Input Voltage—V Ta—Ambient Temperature—"C

GA1A30 _ NEC sicton veces , eo e TC—2159 , April 1988M Printed in Japan a ;