GA150TD120U IRF | Alldatasheet

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VCES = 1200V VCE (on) typ. = 2.4V @V GE = 15V, IC = 150A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.16 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3 ƒ — 3.0 Weight of Module 400 — g Thermal / Mechanical Characteristics Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 150 ICM Pulsed Collector Current 300 A ILM Peak Switching Current‚ 300 IFM Peak Diode Forward Current 300 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 780 W PD @ TC = 85°C Maximum Power Dissipation 406 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125

  • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
  • Very low conduction and switching losses
  • HEXFRED ™ antiparallel diodes with ultra- soft recovery
  • Industry standard package
  • UL approved Benefits
  • Increased operating efficiency
  • Direct mounting to heatsink
  • Performance optimized for power conversion: UPS, SMPS, Welding
  • Lower EMI, requires less snubbing PRELIMINARY
  • Generation 4 IGBT technology www.irf.com 1 Ultra-FastTM Speed IGBT PD - 5.067A

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 1139 1709 V CC = 400V, VGE = 15V Q ge Gate - Emitter Charge (turn-on) — 192 288 nC I C = 171A Q gc Gate - Collector Charge (turn-on) — 377 566 T J = 25°C td(on) Turn-On Delay Time — 414 — R G1 = 15Ω , RG2 = 0Ω tr Rise Time — 208 — ns I C = 150A td(off) Turn-Off Delay Time — 552 — V CC = 720V tf Fall Time — 342 — V GE = ±15V Eon Turn-On Switching Energy — 29 — mJ See Fig.17 through Fig.21 Eoff Turn-Off Switching Energy — 32 — Ets Total Switching Energy — 61 90 C ies Input Capacitance — 25630 — V GE = 0V C oes Output Capacitance — 1139 — pF V CC = 30V C res Reverse Transfer Capacitance — 221 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 186 — ns I C = 150A Irr Diode Peak ReverseCurrent — 133 — A R G1 = 15 Q rr Diode Recovery Charge — 12381 — nC R G2 = 0 di(rec)M /dt Diode Peak Rate of Fall of Recovery — 2524 — A/µs V CC = 720V During tb di/dt=1260A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage1200 — — V GE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 2.4 2.9 V GE = 15V, IC = 150A — 2.2 — V V GE = 15V, IC = 150A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 1.75 mA Δ V GE(th)/Δ TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C V CE = VGE , IC = 1.75mA gfe Forward Transconductance „ — 201 — S V CE = 25V, IC = 150A ICES Collector-to-Emitter Leaking Current — — 2 mA V GE = 0V, VCE = 1200V ——2 0 V GE = 0V, VCE = 1200V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 2.7 3.5 V I F = 150A, VGE = 0V — 2.6 — I F = 150A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 500 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Details of note  through „ are on the last page Ω Ω

www.irf.com 3 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 1000 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C V = 15V 80µs PULSE WIDTH GE T = 25 CJ ° T = 125 CJ ° 0.1 1 10 100 100 120 f, Frequency (KHz) LOAD CURRENT (A) For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation = W 60% of rated voltage I Ideal diodes Square wave: 134 Load Current ( A ) 100 1000 5 6 7 8 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 50V 5µs PULSE WIDTH CC T = 25 CJ ° T = 125 CJ ° 25V

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature 25 50 75 100 125 150 100 150 200 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A300C I = A150C I = A75C ( °C ) 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE) Therm al Response (Z ) t , Rectangular Pulse Duration (sec ) A P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C

www.irf.com 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature R G , Gate Resistance ( Ω ) 1 10 100 10000 20000 30000 40000 50000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc C ies C oes C res 0 200 400 600 800 1000 1200 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 171A CC C 0 10 20 30 40 50 100 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G V = 720V V = 15V T = 25 C I = 150A CC GE J C 15Ω -60 -40 -20 0 20 40 60 80 100 120 140 160 100 1000 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° R = 15Ohm V = 15V V = 960V G GE CC I = A300C I = A150C I = A75C R G1 =15Ω ;RG2 = 0 Ω 125 720V ( Ω )

6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt IC , Collector Current ( A ) Instantaneous Forward Current - IF ( A ) Q RR - ( nC) 100 1000 1.0 2.0 3.0 4.0 FM Forward Vol tage D rop - V (V) T = 125°C T = 25°C J J 5000 10000 15000 20000 25000 500 800 1100 1400 1700 2000 fdi /dt - (A/µs) I = 300A I = 150A I = 75A F F F R J J V = 720V T = 125°C T = 25°C 100 200 300 400 0 200 400 600 800 1000 1200 1400 CE SAFE OPERATI NG AREA V , Collector-to-Emitter Voltage (V ) A V = 20V T = 125°C V measured at terminal (Peak Volta ge) GE J CE 0 50 100 150 200 250 300 350 100 125 150 I , Collector Current (A) Total Switching Losses (mJ) C R = 15Ohm T = 150 C V = 720V V = 15V G J CC GE R G1 =15Ω ;RG2 = 0 Ω

www.irf.com 7 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt trr - ( ns ) IRRM - ( A ) 100 200 300 400 500 800 1100 1400 1700 2000 fdi /dt - (A/µs) I = 300A I = 150A F F I = 75AF R J J V = 720V T = 125°C T = 25°C 100 150 200 250 500 800 1100 1400 1700 2000 fdi /dt - (A/µs) I = 300AF I = 150AF I = 75AF R J J V = 720V T = 125°C T = 25°C

8 www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf Fig. 17 - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr Vce Ic dt Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Vd Ic dt Vce Ic dt Ic dt Vd Ic dt Vce Ic dt Ic dt

Figure 22. Pulsed Collector Current

4 X IC @25°C

Figure 21. Macro Waveforms for Figure 17's Test Circuit Figure 18. Clamped Inductive Load Test Circuit

10 www.irf.com Case Outline — DOUBLE INT-A-PAK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ‚ See fig. 17 ƒ For screws M5x0.8 „ Pulse width 80µs; single shot. Dimensions are shown in millimeters (inches)