GA150KS61U

GA150KS61U IRF | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

VCES = 600V VCE (on) typ. = 1.7V @V GE = 15V, IC = 150A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.28 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.35 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3/G131 — 3.0 Weight of Module 200 — g Thermal / Mechanical Characteristics Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 150 ICM Pulsed Collector Current/G129 300 A ILM Peak Switching Current/G130 300 IFM Peak Diode Forward Current 300 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 440 W PD @ TC = 85°C Maximum Power Dissipation 230 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 /G66/G101/G110/G101/G102/G105/G116/G115 /G46  UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Very low conduction and switching losses  HEXFRED ™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved  Generation 4 IGBT technology  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing www.irf.com 1 /G80/G68/G32 /G45/G57/G52/G51/G52/G54 Low Side Switch Chopper Module Ultra-FastTM Speed IGBT

/G71/G65/G49/G53/G48/G75/G83/G54/G49/G85 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 624 937 V CC = 400V Q ge Gate - Emitter Charge (turn-on) — 121 182 nC I C = 94A Q gc Gate - Collector Charge (turn-on) — 212 317 T J = 25°C td(on) Turn-On Delay Time — 241 — R G1 = 27Ω , RG2 = 0Ω , tr Rise Time — 145 — ns I C = 150A td(off) Turn-Off Delay Time — 336 — VCC = 360V tf Fall Time — 227 — VGE = ±15V Eon Turn-On Switching Energy — 6.0 — mJ Eoff (1) Turn-Off Switching Energy — 12 — Ets (1) Total Switching Energy — 19 33 C ies Input Capacitance — 13878 — VGE = 0V C oes Output Capacitance — 867 — pF V CC = 30V C res Reverse Transfer Capacitance — 181 —ƒ = 1 MHz trr Diode Reverse Recovery Time — 139 — ns I C = 150A Irr Diode Peak ReverseCurrent — 100 — AR G1 = 27Ω Q rr Diode Recovery Charge — 6938 — nC R G2 = 0Ω di(rec)M /dt Diode Peak Rate of Fall of Recovery— 4682 — A/µs V CC = 360V During tb di/dt =1400A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600—— VGE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.7 2.3 V GE = 15V, IC = 150A — 1.7 — VV GE = 15V, IC = 150A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 750µA ∆VGE(th)/∆ TJ Temperature Coeff. of Threshold Voltage— -11 — mV/°CV CE = VGE , IC = 750µA gfe Forward Transconductance /G132 — 152 — SV CE = 25V, IC = 150A ICES Collector-to-Emitter Leaking Current—— 1.0 mA V GE = 0V, VCE = 600V —— 10 V GE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 1.4 2.0 V I F = 150A, VGE = 0V — 1.4 — IF = 150A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current —— 250 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

/G71/G65/G49/G53/G48/G75/G83/G54/G49/G85 www.irf.com 3 Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics /G50/G53/G86 100 1000 1 2 3 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C V = 15V 20µs PULSE WIDTH GE T = 25 CJ o T = 125 CJ o 100 1000 5 6 7 8 9 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 50V 5µs PULSE WIDTH CC T = 25 CJ o T = 125 CJ o /G86/G67/G69/G32/G61/G32/G50/G53/G86 /G56/G48/G181/G115/G32/G80/G85/G76/G83/G69/G32/G87/G73/G68/G84/G72 Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 3 - Maximum Collector Current vs. Case Temperature 25 50 75 100 125 150 120 160 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A75C I = A150C I = A300C

/G71/G65/G49/G53/G48/G75/G83/G54/G49/G85 4 www.irf.com Fig. 5 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 10 100 5000 10000 15000 20000 25000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc C ies C oes C res 0 100 200 300 400 500 600 700 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 94A CC C 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 thJC t , Rectangular Pulse Duration (Seconds) D = 0.50 Single Pulse (Thermal Resistance) Thermal Impedance - Z 0.01 0.20 0.10 0.05 0.02 P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C

/G71/G65/G49/G53/G48/G75/G83/G54/G49/G85 www.irf.com 5 Fig. 8 - Typical Switching Losses vs. Gate Resistance Fig. 9 - Typical Switching Losses vs. Junction Temperature Fig. 10 - Typical Switching Losses vs. Collector-to-Emitter Current 0 10 20 30 40 50 R G , Gate Resistance (Ω ) Total Switching Losses (m VCC = 360V VGE = 15V TJ = 125°C I C = 1500A 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 100 Total Switching Losses (m RG1 = 27Ω, RG2 = 0Ω VGE = 15V VCC = 360V IC = 300A IC = 150A IC = 75A 0 50 100 150 200 250 300 IC , Collector Current (A) Total Switching Losses (m RG1 = 27Ω , RG2 = 0Ω TJ = 150°C VGE = 15V VCC = 360V Fig. 11 - Reverse Bias SOA 0 100 200 300 400 500 600 700 VCE , Collector-to-Emitter Voltage (V) 100 200 300 400 IC, Collector-to-Em itter Current (A) VGE = 20V TJ = 125° VCE measured at terminal (Peak Voltage) SAFE OPERATING AREA

/G71/G65/G49/G53/G48/G75/G83/G54/G49/G85 6 www.irf.com Fig. 12 - Typical Reverse Recovery vs. dif/dt Fig. 13 - Typical Recovery Current vs. dif/dt Fig. 15 - Typical Stored Charge vs. dif/dt 500 1000 1500 2000 dif / dt - (A / µs) 100 200 300 trr - (ns) VR = 360V TJ = 125°C TJ = 25°C IF = 300A IF = 150A IF = 75A 500 1000 1500 2000 dif / dt - (A / µs) 120 160 200 IRRM - (A) VR = 360V TJ = 125°C TJ = 25°C IF = 300A IF = 150A IF = 75A Fig. 14 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 500 1000 1500 2000 dif / dt - (A / µs) 2000 4000 6000 8000 10000 12000 14000 Qrr - (nC) VR = 360V TJ = 125°C TJ = 25°C IF = 300A IF = 150A IF = 75A Forward Voltage Drop - VF ( V ) 100 1000 Instantaneous Forward Current - IF ( A ) TJ = 125°C TJ = 25°C

/G71/G65/G49/G53/G48/G75/G83/G54/G49/G85 www.irf.com 7 Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 16b - Test Waveforms for Circuit of Fig. 16a, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qrr = trr tx id dt Fig. 16a - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 16c - Test Waveforms for Circuit of Fig. 16a, Defining Eon, td(on), tr Fig. 16d - Test Waveforms for Circuit of Fig. 16a Defining Erec, trr, Qrr, Irr /G86/G100/G32/G73/G99/G32/G100/G116 /G86/G99/G101/G32/G73/G99/G32/G100/G116 /G32/G73/G99/G32/G100/G116 /G86/G99/G101/G32/G73/G99/G32/G100/G116 L Rg2 Rg1 Vcc -Vg2 +Vg2 Vcc=60% of BVces Ls= L1+L2+L3 Vge=15V DUT

/G71/G65/G49/G53/G48/G75/G83/G54/G49/G85 www.irf.com 9 Case Outline — INT-A-PAK Notes: /G129Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. /G130See fig. 16 /G131For screws M5x0.8 /G132Pulse width 80µs; single shot. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/01 32.00 31.00 [ 1.260 1.220] 24.00 23.00 .945 .906] 30.50 29.00 1.201 1.142] 92.10 91.10 [ 3.626 3.587] 8.00 6.60 .315 .260] 8.65 7.65 [ .341 .301] 94.70 93.70 3.728 3.689] 2X 23.50 22.50 [ .925 .886] 80.30 79.70 3.161 3.138] 17.50 16.50 .689 .650] 42.00 41.00 [ 1.654 1.614] 1. A LL DIM ENSIO NS A RE SHO W N IN M ILLIM ETERS [INC HES]. 2. CONT ROLLING DIMENS ION: MILLIMET ER. NOT ES : 4X F AS TON TAB (110) 3X M5 8 [.314] MAX. 2X Ø 6.80 6.20 [ .267 .244] 4.50 3.50 [ .177 .138] 321 34.70 33.70 [ 1.366 1.327] 2X 13.30 12.70 [ .524 .500] 0.15 [.0059] CONVEX