GA100TS60U

GA100TS60U IRF | Alldatasheet

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VCES = 600V VCE (on) typ. = 1.6V @V GE = 15V, IC = 100A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.38 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.70 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3/G83 — 3.0 Weight of Module 200 — g Thermal / Mechanical Characteristics Ultra-FastTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 100 ICM Pulsed Collector Current 200 A ILM Peak Switching Current‚ 200 IFM Peak Diode Forward Current 200 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 320 W PD @ TC = 85°C Maximum Power Dissipation 170 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Very low conduction and switching losses  HEXFRED ™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL recognition pending Benefits  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing  Generation 4 IGBT technology www.irf.com 1 PD -50055B

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 443 664 V CC = 400V Q ge Gate - Emitter Charge (turn-on) — 86 129 nC I C = 66A Q gc Gate - Collector Charge (turn-on) — 150 225 T J = 25°C td(on) Turn-On Delay Time — 168 — R G1 = 27Ω , RG2 = 0Ω tr Rise Time — 145 — ns I C = 100A td(off) Turn-Off Delay Time — 320 — VCC = 360V tf Fall Time — 242 — VGE = ±15V Eon Turn-On Switching Energy — 4.0 — mJ Eoff (1) Turn-Off Switching Energy — 7.0 — Ets (1) Total Switching Energy — 11 17 C ies Input Capacitance — 9837 — VGE = 0V C oes Output Capacitance — 615 — pF V CC = 30V C res Reverse Transfer Capacitance — 128 —ƒ = 1 MHz trr Diode Reverse Recovery Time — 143 — ns I C = 100A Irr Diode Peak ReverseCurrent — 95 — AR G1 = 27Ω Q rr Diode Recovery Charge — 6813 — nC R G2 = 0Ω di(rec)M /dt Diode Peak Rate of Fall of Recovery— 1883 — A/µs V CC = 360V During tb di/dt»1300A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600—— VGE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.6 2.1 V GE = 15V, IC = 100A — 1.6 — VV GE = 15V, IC = 100A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 500µA ∆VGE(th)/∆ TJ Temperature Coeff. of Threshold Voltage— -11 — mV/°CV CE = VGE , IC = 500µA gfe Forward Transconductance „— 107 — SV CE = 25V, IC = 100A ICES Collector-to-Emitter Leaking Current—— 1.0 mA V GE = 0V, VCE = 600V —— 10 V GE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 3.6 — VI F = 100A, VGE = 0V — 3.5 — IF = 100A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current —— 100 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

www.irf.com 3 0.1 1 10 100 100 f, Frequency (KHz) LOAD CURRENT (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 1000 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C V = 15 V 20µs PULSE WIDTH GE T = 125 CJ ° T = 25 CJ ° 100 1000 5 6 7 8 9 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 50V 5µs PULSE WIDTH CC T = 25 CJ o T = 125 CJ o VCE = 25V 80µs PULSE WIDTH For both: Duty cycle: 50% T = 125 °C T = 90°C Gate drive as specified sink J Power Di ssi pat i on = W73 60% of rated voltage I Ideal diodes Square wave:

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature 25 50 75 100 125 150 100 120 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A50C I = A100C I = A200C 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 thJC t , Rectang ular Pulse Duration (Seconds ) D = 0.50 S ingle Pulse (Thermal Resistance ) Thermal Impedance - Z P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T J DM thJC C 0.01 0.20 0.10 0.05 0.02

www.irf.com 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 10 20 30 40 50 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G V = 360V V = 15V T = 25 C I = 100A CC GE J C -60 -40 -20 0 20 40 60 80 100 120 140 160 100 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° R = Ohm V = 15V V = 360V G GE CC I = A200C I = A100C I = A50C R G1 , Gate Resistance (Ω ) 125°C R G1 =15Ω ;RG2 = 0 Ω 1 10 100 4000 8000 12000 16000 20000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc C ies C oes C res 0 100 200 300 400 500 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 66A CC C

6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 0 40 80 120 160 200 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C R = Ohm T = 150 C V = 0V V = 15V G J CC GE R G1 =15Ω ;RG2 = 0 Ω 100 150 200 250 300 0 100 200 300 400 500 600 700 CE SAFE OPERATING AREA V , Collector-to-Emitter Voltage (V ) A V = 20V T = 125°C V measured at terminal (Peak Voltage) GE J CE 100 1000 FM FInstantaneous Forward Current - I (A) Forward Volta g e Drop - V (V ) T = 125°C T = 25°C J J 2000 4000 6000 8000 10000 12000 500 1000 1500 2000 fdi /dt - (A/µs) RRQ - (nC) I = 200A I = 100A I = 50A F F F R J J V = 360V T = 125°C T = 25°C

www.irf.com 7 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt 120 160 200 240 500 1000 1500 2000 fdi /dt - (A/µs) t - (ns)rr I = 200A I = 100A I = 50A F F F R J J V = 360V T = 125°C T = 25°C 120 150 500 1000 1500 2000 fdi /dt - (A/µ s) I - (A)IRRM I = 200A I = 100A I = 50A F F F R J J V = 360V T = 125 °C T = 25°C

8 www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY W AVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 17 - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

www.irf.com 9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D. U. T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 22./G20/G50/G75/G6C/G73/G65/G64/G20/G43/G6F/G6C/G6C/G65/G63/G74/G6F/G72/G20/G43/G75/G72/G72/G65/G6E/G74 /G54/G65/G73/G74/G20/G43/G69/G72/G63/G75/G69/G74 R L= 480V

4 X IC @25°C

Figure 21./G20/G4D/G61/G63/G72/G6F/G20/G57/G61/G76/G65/G66/G6F/G72/G6D/G73/G20/G66/G6F/G72/G20/G46/G69/G67/G75/G72/G65/G20/G31/G37/G27/G73/G20/G54/G65/G73/G74/G20/G43/G69/G72/G63/G75/G69/G74

10 www.irf.com Case Outline — INT-A-PAK Notes: /G81Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. /G82See fig. 17 /G83For screws M5x0.8 /G84Pulse width 80µs; single shot. Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00