GA100TS60SQ IRF | Alldatasheet

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Technical content

Features

www.irf.com

  • Optimized for high current inverter stages (AC TIG welding machines)
  • Direct mounting to heatsink
  • Hard switching operation frequency up to 1 KHz
  • Very low junction-to-case thermal resistance
  • Low EMI Benefits VCES = 600V IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25°C

Bulletin I27119 rev. B 06/02 2 www.irf.com TJ Operating Junction Temperature Range - 40 150 °C TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case per Switch 0.16 °C/ W Per Diode 0.48 RthCS Case-to-Sink Per Module 0.1 T Mounting torque Case to heatsink 4 Nm Case to terminal 1, 2, 3 3 Weight 185 g VBRCES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 1mA VCE(on) Collector-to-Emitter Voltage 1.11 1.21 V GE = 15V, I C = 100A

1.39 I C = 200A

1.08 1.17 V GE = 15V, I C = 100A, T J = 125°C VGE(th) Gate Threshold Voltage 3 6 I C = 0.25mA ICES Collector-to-Emiter Leakage 1 mA V GE = 0V, V CE = 600V Current 10 V GE = 0V, V CE = 600V, T J = 125°C VFM Diode Forward Voltage drop 1.21 1.28 V I C = 100A, V GE = 0V 1.16 1.24 I C = 100A, V GE = 0V, T J = 125°C IGES Gate-to-Emitter Leakage Current ± 250 nA V GE = ± 20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Total Gate Charge 640 700 nC I C = 100A Qge Gate-Emitter Charge 108 120 V CC = 400V Qgc Gate-Collector Charge 230 300 V GE = 15V tr Rise Time 0.45 µs IC = 100A, VCC = 480V, VGE = 15V tf Fall Time 1.0 Rg = 15Ω Eon Turn-On Switching Energy 4 6 mJ Eoff Turn-Off Switching Energy 23 29 Ets Total Switching Energy 27 35 Eon Turn-On Switching Energy 6 12 mJ IC = 100A, VCC = 480V, VGE = 15V Eoff Turn-Off Switching Energy 35 40 Rg = 15Ω , TJ = 125°C Ets Total Switching Energy 41 52 Cies Input Capacitance 16250 pF V GE = 0V Coes Output Capacitance 1040 V CC = 30V Cres Reverse Transfer Capacitance 190 f = 1.0 MHz trr Diode Reverse Recovery Time 440 480 ns I F = 50A, dIF/dt = 50A/µs Irr Diode Peak Reverse Current 15 18 A V RR = 200V Qrr Diode Recovery Charge 3400 4000 nC T J = 125°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Thermal- Mechanical Specifications Parameters Min Typ Max Units

Bulletin I27119 rev. B 06/02 GA100TS60SQ www.irf.com Fig. 1 - Typical Output Characteristics IC, Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 2 - Typical Transfer Characteristics IC , Collector-to-Emitter Current (A) VGE, Gate-to-Emitter Voltage (V) Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature VCE, Collector-to-Emitter Voltage (V) TJ, Junction Temperature (°C) Fig. 3 - Maximum Collector Current vs. Case Temperature Maximum DC Collector Current (A) TC, Case Temperature (°C) 100 1000 5.5 6.5 7.5 8.5 Vce = 10V 380µs PULSE WIDTH T = 25˚C T = 125˚CJ J 0.7 0.9 1.1 1.3 1.5 25 50 75 100 125 150 I = 50A I = 100A I = 200AC C 100 1000 Tj = 25˚C Vge = 15V Tj = 125˚C 120 160 200 240 25 50 75 100 125 150

Bulletin I27119 rev. B 06/02 4 www.irf.com Fig. 5 - Typical Gate Charge vs. Gate-to- Emitter Voltage VGE, Gate-to-Emitter Voltage (V) QG, Total Gate Charge (nC) Switching Losses (mJ) RG, Gate Reistance (Ω ) Switching Losses (mJ) IC, Collector-to-Emitter Current (A) 0 100 200 300 400 500 600 700 Vcc = 400V Ic = 100A 10 20 30 40 50 Eon Eoff Tj = 25˚C, Vce = 480V Vge = 15V, Ic = 100A Fig. 6 - Typical Switching Losses vs Gate Resistance Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 0 40 80 120 160 Eon Eoff Tj = 125˚C Vce = 480V Vge = 15V Rge = 15 Ω

Bulletin I27119 rev. B 06/02 GA100TS60SQ www.irf.com Fig. 8 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Instantaneous Forward Current - I F (A) Forward Voltage Drop- VFM (V) t rr (ns) dif /dt - A/µs Fig. 9 - Typical Reverse Recovery vs. dif /dt 150 200 250 300 350 400 450 500 0 200 400 600 800 1000 If = 50A, Tj = 125˚C If = 50A, Tj = 25˚C Vr = 200V I RRM (A) dif /dt - A/µs Fig. 10 - Typical Reverse Recovery Current vs. dif /dt 100 120 140 0 200 400 600 800 1000 If = 50A, Tj = 125˚C If = 50A, Tj = 25˚C Vr = 200V Q RR (nC) dif /dt - A/µs Fig. 11 - Typical Stored Charge vs. dif /dt 0 200 400 600 800 1000 Vr = 200V I = 50A, Tj = 125˚C I = 50A, Tj = 25˚C F F 100 1000 Tj = 25˚C Tj = 125˚C

Bulletin I27119 rev. B 06/02 6 www.irf.com Outline Table Dimensions in millimeters Electrical Diagram Note: unused terminals are not assembled in the package

Bulletin I27119 rev. B 06/02 GA100TS60SQ www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 06/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. Device Code Ordering Information Table GA 100 T S 60 S Q 1 2 3 4 5 6 7 1 - Essential Part Number IGBT modules 2 - Current rating (100 = 100A) 3 - Circuit Configuration (T = Half Bridge) 4 - Int-A-Pak 5 - Voltage Code (60 = 600V) 6 - Speed/ Type (S = Standard Speed IGBT) 7 - Diode Type (Moat Fast S02)