GA100TS60SF IRF | Alldatasheet

Document overview

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Technical content

Features

  • Optimized for high current inverter stages (AC TIG welding machines)
  • Direct mounting to heatsink
  • Hard switching operation frequency up to 1 KHz
  • Very low junction-to-case thermal resistance
  • Low EMI Benefits VCES = 600V IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25°C www.irf.com

Bulletin I27201 rev. A 01/06 www.irf.com TJ Operating Junction Temperature Range - 40 150 TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case per Switch 0.16 °C/ W Per Diode 0.48 RthCS Case-to-Sink Per Module 0.1 T Mounting torque Case to heatsink Nm Case to terminal 1, 2, 3 Weight 185 g VBRCES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage 1.11 1.28 VGE = 15V, IC = 100A 1.39 IC = 200A 1.08 1.22 VGE = 15V, IC = 100A, TJ = 125°C VGE(th) Gate Threshold Voltage IC = 0.25mA ICES Collector-to-Emiter Leakage mA VGE = 0V, VCE = 600V Current VGE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage drop 1.44 1.96 V IC = 100A, VGE = 0V 1.25 1.54 IC = 100A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current ± 250 nA VGE = ± 20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Total Gate Charge 640 700 nC IC = 100A Qge Gate-Emitter Charge 108 120 VCC = 400V Qgc Gate-Collector Charge 230 300 VGE = 15V tr Rise Time 0.45 µs IC = 100A, VCC = 480V, VGE = 15V tf Fall Time 1.0 Rg = 15Ω Eon Turn-On Switching Energy mJ Eoff Turn-Off Switching Energy Ets Total Switching Energy Eon Turn-On Switching Energy mJ IC = 100A, VCC = 480V, VGE = 15V Eoff Turn-Off Switching Energy Rg = 15Ω, TJ = 125°C Ets Total Switching Energy Cies Input Capacitance 16250 pF VGE = 0V Coes Output Capacitance 1040 VCC = 30V Cres Reverse Transfer Capacitance 190 f = 1.0 MHz trr Diode Reverse Recovery Time 155 ns IF = 50A, dIF/dt = 200A/µs Irr Diode Peak Reverse Current 10.6 A VRR = 200V Qrr Diode Recovery Charge 500 900 nC trr Diode Reverse Recovery Time 180 344 ns IF = 50A, dIF/dt = 200A/µs Irr Diode Peak Reverse Current 20.5 A VRR = 200V Qrr Diode Recovery Charge 1633 2315 nC TJ = 125°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Thermal- Mechanical Specifications Parameters Min Typ Max Units

Bulletin I27201 rev. A 01/06 GA100TS60SF www.irf.com Fig. 1 - Typical Output Characteristics IC, Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 2 - Typical Transfer Characteristics IC , Collector-to-Emitter Current (A) VGE, Gate-to-Emitter Voltage (V) Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature VCE, Collector-to-Emitter Voltage (V) TJ, Junction Temperature (°C) Fig. 3 - Maximum Collector Current vs. Case Temperature Maximum DC Collector Current (A) TC, Case Temperature (°C) 100 1000 5.5 6.5 7.5 8.5 Vce = 10V 380µs PULSE WIDTH T = 25˚C T = 125˚C J J 0.7 0.9 1.1 1.3 1.5 100 125 150 I = 50A I = 100A I = 200A C C 100 1000 0.6 0.8 1.2 1.4 1.6 1.8 Tj = 25˚C Vge = 15V Tj = 125˚C 120 160 200 240 100 125 150

Bulletin I27201 rev. A 01/06 www.irf.com Fig. 5 - Typical Gate Charge vs. Gate-to- Emitter Voltage VGE, Gate-to-Emitter Voltage (V) QG, Total Gate Charge (nC) Switching Losses (mJ) RG, Gate Reistance (Ω) Switching Losses (mJ) IC, Collector-to-Emitter Current (A) 100 200 300 400 500 600 700 Vcc = 400V Ic = 100A Eon Eoff Tj = 25˚C, Vce = 480V Vge = 15V, Ic = 100A Fig. 6 - Typical Switching Losses vs Gate Resistance Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 120 160 Eon Eoff Tj = 125˚C Vce = 480V Vge = 15V Rge = 15 Ω

Bulletin I27201 rev. A 01/06 GA100TS60SF www.irf.com Fig. 8 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Instantaneous Forward Current - I F (A) Forward Voltage Drop- VFM (V) t rr (ns) dif /dt - A/µs Fig. 9 - Typical Reverse Recovery vs. dif /dt I RRM (A) dif /dt - A/µs Fig. 10 - Typical Reverse Recovery Current vs. dif /dt Q RR (nC) dif /dt - A/µs Fig. 11 - Typical Stored Charge vs. dif /dt 100 1000 10000 100 1000 Vr = 200V If = 50A, Tj = 125˚C If = 50A, Tj = 25˚C 100 1000 100 1000 Vr = 200V If = 50A, Tj = 125˚C If = 50A, Tj = 25˚C 100 100 1000 Vr = 200V If = 50A, Tj = 125˚C If = 50A, Tj = 25˚C 100 1000 0.5 1.5 2.5 Tj = 25˚C Tj = 125˚C

Bulletin I27201 rev. A 01/06 www.irf.com Device Code Ordering Information Table Outline Table GA 100 T S S F Essential Part Number IGBT modules Current rating (100 = 100A) Circuit Configuration (T = Half Bridge) Int-A-Pak Voltage Code (60 = 600V) Speed/ Type (S = Standard Speed IGBT) Diode Type All dimensions are in millimeters

Bulletin I27201 rev. A 01/06 GA100TS60SF www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/06 Data and specifications subject to change without notice. This product has been designed for Industrial Level. Qualification Standards can be found on IR's Web site.