GA100TS120U

GA100TS120U IRF | Alldatasheet

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VCES = 1200V VCE (on) typ. = 2.4V @V GE = 15V, IC = 100A Parameter Typ. Max. Units R θJC Thermal Resistance, Junction-to-Case - IGBT — 0.24 R θJC Thermal Resistance, Junction-to-Case - Diode — 0.35 °C/W R θCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂ — 3.0 Weight of Module 200 — g Thermal / Mechanical Characteristics Ultra-FastTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 100 ICM Pulsed Collector Current ➀ 200 A ILM Peak Switching Current ➁ 200 IFM Peak Diode Forward Current 200 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 520 W PD @ TC = 85°C Maximum Power Dissipation 270 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Very low conduction and switching losses  HEXFRED ™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing  Generation 4 IGBT technology PD - 50060B www.irf.com 1

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 830 1245 V CC = 400V Qge Gate - Emitter Charge (turn-on) — 140 210 nC I C = 124A Q gc Gate - Collector Charge (turn-on) — 275 412 T J = 25°C td(on) Turn-On Delay Time — 172 — R G1 = 15Ω , RG2 = 0Ω , tr Rise Time — 141 — ns I C = 100A td(off) Turn-Off Delay Time — 435 — V CC = 720V tf Fall Time — 343 — V GE = ±15V Eon Turn-On Switching Energy — 14 — mJ Eoff (1) Turn-Off Switching Energy — 21 — Ets (1) Total Switching Energy — 35 52 C ies Input Capacitance — 18672 — V GE = 0V C oes Output Capacitance — 830 — pF V CC = 30V C res Reverse Transfer Capacitance — 161 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 149 — ns I C = 100A Irr Diode Peak ReverseCurrent — 104 — A R G1 = 15Ω Q rr Diode Recovery Charge — 7664 — µC R G2 = 0Ω di(rec)M /dt Diode Peak Rate of Fall of Recovery — 1916 — A/µs V CC = 720V During tb di/dt»1300A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V GE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 2.4 2.9 V GE = 15V, IC = 100A — 2.2 — V V GE = 15V, IC = 100A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 I C = 1.25mA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C V CE = VGE , IC = 1.25mA gfe Forward Transconductance ➃ — 136 — S V CE = 25V, IC = 100A ICES Collector-to-Emitter Leaking Current — — 1.0 mA V GE = 0V, VCE = 1200V ——1 0 V GE = 0V, VCE = 1200V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 3.3 4.0 V I F = 100A, VGE = 0V — 3.2 — I F = 100A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 250 nA V GE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

www.irf.com 3 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 1000 5 6 7 8 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 50V 5µs PULSE WIDTH CC T = 25 CJ ° T = 125 CJ ° IC , Collector Current ( A ) IC , Collector Current ( A ) 100 1000 1.0 2.0 3.0 4.0 V , Collector-to-Emitter Voltage (V) I , Collector Current (A) CE C V = 15V 80µs PULSE WIDTH GE T = 25 CJ ° T = 125 CJ ° 0.1 1 10 100 100 f, Frequency (KHz ) LOAD CURRENT (A) 60% of rated voltage I Ideal diodes Square wave: For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation = W170

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature 25 50 75 100 125 150 120 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A200C I = A100C I = A50C 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE) Therm al Response (Z ) t , Rectang ular Pulse Duration (sec ) A P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C

www.irf.com 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 10 20 30 40 50 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G V = 720V V = 15V T = 125 C I = 100A CC GE J C -60 -40 -20 0 20 40 60 80 100 120 140 160 100 1000 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° R = Ohm V = 15V V = 720V G GE CC I = A200C I = A100C I = A50C 1 10 100 7000 14000 21000 28000 35000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc C ies C oes C res 0 300 600 900 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 113A CC C R G1 =15Ω ;RG2 = 0 Ω

6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Reverse Bias SOA Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt Instantaneous Forward Current - IF ( A ) 0 50 100 150 200 I , Collector Current (A) Total Switching Losses (mJ) C R = Ohm T = 150 C V = 720V V = 15V G J CC GE Q RR - ( nC) 100 1000 FM Forward Voltage Drop - V (V ) T = 125°C T = 25°C J J Forward Voltage Drop - VFM (V) 4000 8000 12000 16000 400 800 1200 1600 2000 f I = 200A I = 100A I = 50A F F F di /dt - (A/µs) R J J V = 720V T = 125°C T = 25°C IC , Collector Current ( A ) 100 200 300 0 300 600 900 1200 1500 CE SA FE OPERA TING A REA GE J V , C o lle cto r -to -Em itte r Vo ltag e ( V ) A V = 20V T = 125°C V measured at terminal (Peak Voltage) GE J CE R G1 =15Ω ;RG2 = 0 Ω

www.irf.com 7 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt trr - ( ns ) IRRM - ( A ) 120 160 200 240 400 800 1200 1600 2000 di /dt - (A/µs) I = 200A I = 100A I = 50A F F F R J J V = 720V T = 125°C T = 25°C f 100 150 200 250 400 800 1200 1600 2000 di /dt - (A/µs) I = 200A I = 100A I = 50AF F F R J J V = 720V T = 125°C T = 25°C f

8 www.irf.com Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% V ge +V ge ∫Eoff = Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +V g10% +V g 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 17a - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

Figure 18. Clamped Inductive Load Test CircuitFigure 19. Pulsed Collector Current

4 X IC @25°C

10 www.irf.com Case Outline — INT-A-PAK Notes: ➀ Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ➁ See fig. 17 ➂ For screws M5x0.8 ➃ Pulse width 50µs; single shot. Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00