GA100NA60U IRF | Alldatasheet

Document overview

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Technical content

Features

  • UltraFastTM : Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode
  • Very low conduction and switching losses
  • Fully isolated package (2,500 Volt AC/RMS)
  • Very low internal inductance ( ≤ 5 nH typ.)
  • Industry standard outline
  • Designed for increased operating efficiency in power conversion: PFC, UPS, SMPS, Welding, Induction heating
  • Lower overall losses available at frequencies ≥ 20kHz
  • Easy to assemble and parallel
  • Direct mounting to heatsink
  • Lower EMI, requires less snubbing
  • Plug-in compatible with other SOT-227 packages Benefits VCES = 600V VCE(on) typ. = 1.49V @V GE = 15V, IC = 50A Thermal Resistance Absolute Maximum Ratings W 7/27/01 °C/W INSULATED GATE BIPOLAR TRANSISTOR Ultra-FastTM Speed IGBT www.irf.com 1 SOT-227 PD - 94290

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 430 640 I C = 50A Qge Gate - Emitter Charge (turn-on) — 48 72 nC V CC = 400V See Fig. 7 Q gc Gate - Collector Charge (turn-on) — 130 190 V GE = 15V td(on) Turn-On Delay Time ––– 57 ––– T J = 25°C tr Rise Time ––– 80 ––– ns I C = 60A, VCC = 480V td(off) Turn-Off Delay Time ––– 240 — V GE = 15V, RG = 5.0Ω tf Fall Time ––– 120 — Energy losses include "tail" and Eon Turn-On Switching Loss ––– 0.41 ––– diode reverse recovery. Eoff Turn-Off Switching Loss ––– 2.51 ––– mJ Ets Total Switching Loss ––– 2.92 4.4 td(on) Turn-On Delay Time ––– 57 ––– T J = 150°C, tr Rise Time ––– 80 ––– ns I C = 60A, VCC = 480V td(off) Turn-Off Delay Time ––– 380 ––– V GE = 15V, RG = 5.0Ω tf Fall Time ––– 170 ––– Energy losses include "tail" and Ets Total Switching Loss ––– 4.78 ––– mJ diode reverse recovery. LE Internal Emitter Inductance — 2.0 — nH C ies Input Capacitance — 7400 — V GE = 0V C oes Output Capacitance — 730 — pF V CC = 30V See Fig. 6 C res Reverse Transfer Capacitance — 90 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 90 140 ns T J = 25°C See Fig. — 120 180 T J = 125°C 13 IF = 50A Irr Diode Peak Reverse Recovery Current — 7.3 11 A T J = 25°C See Fig. —1 11 6 T J = 125°C 14 VR = 200V Q rr Diode Reverse Recovery Charge — 360 550 nC T J = 25°C See Fig. — 780 1200 T J = 125°C 15 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 370 — A/µs T J = 25°C See Fig. During tb — 220 — T J = 125°C 16 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage➂ 600 — — V V GE = 0V, IC = 250µA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —0.36 — V/°C V GE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.49 2.1 I C = 50A V GE = 15V — 1.80 — V I C = 100A See Fig. 1, 4 — 1.47 — I C = 50A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V CE = VGE , IC = 250µA ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage —-7.6 — mV/°C V CE = VGE , IC = 250µA gfe Forward Transconductance ➃ 34 52 — S V CE = 100V, IC = 50A ICES Zero Gate Voltage Collector Current — — 250 µA V GE = 0V, VCE = 600V — — 1.3 mA V GE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.3 1.6 V I C = 50A See Fig. 12 — 1.16 1.3 I C = 50A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA V GE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Details of note  through „ are on the page 7

www.irf.com 3 Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics 100 1000 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C V = 15V 20µs PULSE WIDTH GE T = 25 CJ ° T = 150 CJ ° 100 1000 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 50V 5µs PULSE WIDTH CC T = 25 CJ ° T = 150 CJ ° Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 3 - Maximum Collector Current vs. Case Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A100C I = A50C I = A25C 25 50 75 100 125 150 100 T , Case Temperature ( C) Maximum DC Collector Current(A) C °

4 www.irf.com Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.001 0.01 0.1 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) Fig. 6 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 7 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 100 200 300 400 500 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 50A CC C 1 10 100 2000 4000 6000 8000 10000 12000 14000 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc C ies C oes C res

www.irf.com 5 Fig. 8 - Typical Switching Losses vs. Gate Resistance Fig. 9 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 40 50 R G , Gate Resistance (Ω ) Total Switching Losses (mJ) VCC = 480V VGE = 15V TJ = 25°C I C = 60A -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 0.1 100 Total Switching Losses (mJ) RG = 5.0Ω VGE = 15V VCC = 480V IC = 120A IC = 60A IC = 30A 100 1000 1 10 100 1000 V = 20V T = 125 C GE J o SAFE OPERATING AREA V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C Fig. 10 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 11 - Turn-Off SOA 20 40 60 80 100 IC , Collector Current (A) Total Switching Losses (mJ) RG = 5.0Ω TJ = 150°C VGE = 15V VCC = 480V

6 www.irf.com Fig. 12 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 100 1000 FM T = 150°C T = 125°C T = 25°C J J J Forward Voltage Drop - V (V) Instantaneous forward current - IF (A) Fig. 13 - Typical Reverse Recovery vs. dif/dt Fig. 14 - Typical Recovery Current vs. dif/dt Irr- ( A) trr- (nC) 100 100 1000 fdi /dt - (A/µ s) I = 100A I = 50A I = 25AF F F V = 200V T = 125°C T = 25°C R J J 120 150 100 1000 fdi /dt - (A/µ s) I = 100A I = 50A I = 25A F F F V = 200V T = 125°C T = 25°C R J J

www.irf.com 7 Fig. 15 - Typical Stored Charge vs. dif/dt Fig. 16 - Typical di(rec)M/dt vs. dif/dt di (rec) M/dt- (A /µs) Qrr- (nC) 100 1000 10000 100 1000 fdi /dt - (A/µ s) I = 100A I = 50A I = 25A F F F V = 200V T = 125°C T = 25°C R J J 1000 2000 3000 4000 100 1000 fdi /dt - (A/µ s) I = 100A I = 50A I = 25A F F F V = 200V T = 125°C T = 25°C R J J Notes: ➀ Repetitive rating: VGE =20V; pulse width limited by maximum junction temperature (figure 20) ➁ VCC =80%(V CES ), VGE =20V, L=10µH, RG = 5.0Ω (figure 19) ➂ Pulse width ≤ 80µs; duty factor ≤ 0.1%. ➃ Pulse width 5.0µs, single shot.

8 www.irf.com Same type device as D.U.T. D.U.T. 430µF80% of Vce Fig. 17a - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 17b - Test Waveforms for Circuit of Fig. 17a, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 17c - Test Waveforms for Circuit of Fig. 17a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 17a, Defining Erec, trr, Qrr, Irr Vc Ic dt Vce Ic dt Ic dt t=5µsd(on)t tftr 90% td(off) 10% 90% 10%5% C IC E on E off ts on offE = (E +E ) V Vge

Figure 18. Clamped Inductive Load Test CircuitFigure 19. Pulsed Collector Current

4 X IC @25°C

10 www.irf.com 4.40 (.173 ) 4.20 (.165 ) 12.50 ( .492 ) 7.50 ( .295 ) 2.10 ( .082 ) 1.90 ( .075 ) 30.20 ( 1.189 ) 29.80 ( 1.173 ) 8.10 ( .319 ) 7.70 ( .303 )4X 15.00 ( .590 ) R FULL 2.10 ( .082 ) 1.90 ( .075 ) 0.12 ( .005 ) -C- 0.25 ( .010 ) M C A M B M 25.70 ( 1.012 ) 25.20 ( .992 ) -B- 6.25 ( .246 ) C HAM FER 2.00 ( .079 ) X 457 -A- 38.30 ( 1.508 ) 37.80 ( 1.488 ) 12.30 ( .484 ) 11.80 ( .464 ) LEAD ASSIGMENTS IGBT E C GE S D GS HEXFET A1 K2 K1 A2 HEXFRED E,K Dimensions are shown in millimeters ( inches ) A C IGBT G Tube QUANTITIES PER TUBE IS 10 M4 SCREW AND WASHER INCLUDED Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.7/01