GA100

GA100 MICROSEMI | Alldatasheet

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oo ; GA101 Nuclear Radiation Resistant, Planar GA102 FEATURES DESCRIPTION © Optimized for Radiation Resistance The GA1O0 Series of Radiation Hard SCRs have been designed to provide ‘ Fully Characterized for “Worst Case” _ significantly greater radiation tolerance than conventional SCRs or Transistors with Design the same current handling ability. This Series is capable of operation after exoosure ‘© Post Radiation Design Limits Specified to 10'5 NVT. ate reer co maton for The radiation resistant characteristics of the GA1O0 series devices make them Uniform y particularly desirable for use under radiation environments in squib firing circuits; rity Inverters and converters; pulse generators; relay rivers; and modulator discharge ‘© Pulse Currents: to 30A itches. © Max. Trigger Current 20mA after switches. 3X 10'* NVT © Max. Holding Current 30mA after 3X10" NVT ABSOLUTE MAXIMUM RATINGS aioo cater case Repetitive Peak Off-State Voltage, Voi. 30. 6ov av D.C. On-State Current, 1, 7860: Ambient 200mA 100°C Case 400mA. Repetitive Peak On-State Current, Ire, up to 30A, Surge (non-rep) On-State Current, Ij (Sq. Pulse-50ms) 5A Peale Gate Current, boyy 250mA . Average Gate Current, Teyay, 25mA Reverse Gate Voltage, Vex, SV. Reverse Gate Current, leg 3mA Storage Temperature Range 65°C to +-200°¢ Operating Temperature Range —65°C to +150°C MECHANICAL SPECIFICATIONS aio cai cave | | To-70 Gay ee cd Tayo i 1 wo sO wens ‘MILLIMETERS. | SST carmooe~Y- SOs RT T7B-495 Om] 4 52-495 DA A — o AM L ots preetin oN # [aaa ax saa [Se] ieoncio ba} ~esea ec om] Tze oes HET la Corp.

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ELECTRICAL SPECIFICATIONS (at 25°C unless noted) symbol Limits VE Design Test Conditions Pm de Max | =a [| sae Visual and Mechanical - Method 2071 ‘SUBGROUP 2 (25°C Tests) Off-State Current tone | — | 005 | at | — | 10 | pA | Rex = 2200, Voay = Rating Reverse Gate Current ten | — | ov] or) — | 10 | uA!) Vee=av Input Trigger Current (Note 2) ir | 18 | 23 | 35 | — | 20 | mA Roc = 2200,V, = 5V Gate Trigger Voltage Ver | 04 | 05 | a7} ~ | 15 | V | Re, =2200,v,=5¥ On-State Voltage i ove { o8 | 1a | is} — | 30 | v | i Sta (putse test Holding Current in 03 | 07 10 = 30 | mA} Rex = 2200 ‘SUBGROUP 3 (25°C Tests) Off-State Voltage-Critical Rate of Rise | dv/dt | 20 | 40 — | — | — | vius| Rex = 2200, Vp = 30V Gate Trigger-on Pulse Width tyg(on)| — | 02 | 05 | ~ | 01 | us | 1g =25mA,1;=1A,V, = 30V Delay Time ty — | oe) — |) — | = J ons | tg = 25mA tp = 1A Vy = 20 Rise Time t | =|] 9 | —| ~— | = | as | i¢=25mAl,=1A,V, = 30V Circuit Commutated Tum-off Time ta | — | 15 | 25 | — | 10 | os | =I ip = 1A Reg = 2200 ‘SUBGROUP 4 (125°C Tests) ign Temp Umt-State Current Towa - mw} wv | — } 100 | BA | Rey = 2208, Vogy = Rating High Temp Gate Trigger Voltage Ver | ot | a7 | — | or | — | Vv | Rey=200,v,=0 Notes: 1. OffState voltage ratings apply over the operating temperature range provided the gate Is connected to the cathode through an aopropriste resistor, or other adeauate bias is used. 2, Total Input “Trigger Current, including current required by 2200 gate bias resistance. DESIGN CONSIDERATIONS but is not a design consideration at the recommended gate bias levels. In order to optimize for radiation tolerance, reverse blocking capability has not been retained as a design feature. Devices with reverse blocking capability can be provided. 2. Minimum critical dvidt levels are defined in Curve 2. The dvidt capability i improved after radiation hacause of reduced triggering sensitivity. dv/dt is therefore a design consideration only prior to radiation. 3. Curves 3 and 4 show the limits of Gate Trigger Voltage and Total Input Trigger Current prior to radiation. Maximum design limits after a total radiation dosage of 3 x 10'+ NVT is also shown. Curves 5 and 6 show the maximum limits of Gate Trigger Voltage and Total Input Trigger Curronte a¢ 2 junction of neutron docage. The minimum level of Trigger current prior to radiation is established by the shunting effect of a 220 ohm resistor between gate and cathode. After radiation the device is less sensitive and Total Trigger Current will increase to a level relatively independent of the bias resistance. The 220 ohm resistor is recommended since it raises the minimum preradiation trigger current to a level that is closer to the pact radiation limit and minimizes the percentage change in this parameter. 4. Current ratings shown in Curves 10, 11, and 12 apply after the device has been subjected to 3 x 10% NVT. Current ratings prior to radiation are greater than the values indicated. 5. Gamma radiation produces a reversible ionization (leakage) current within the device which is directly proportional to the Gamma flux level, When the Gana flux level is in the range of 10 ty 100 Rueniyens pet miviusecond fur burst durations greater than 1 microsecond, the device will self trigger ON. For the radiation bursts associated with nuclear explosions, the Gamma fiux level will invariably cause device triggering at radiation levels significantly below the levels that would produce detectable permanent device damage due to cumulative neutron dosage. In applications where the burst effect ‘triggering cannot be tolerated, It Is necessary to reset the device after the radiation burst. Special circult approacnes such as additional SCRs to crowbar or otherwise cancel the output function may be used.

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