GA0603B1040 GOOD-ARK | Alldatasheet
Document overview
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Technical content
DFN 1.6X0.8-2L Plastic-Encapsulate Schottky Barrier Diode
FEATURES
Low forward voltage drop Small power mold type Low IR Small current rectification
APPLICATIONS
Low voltage rectification High efficiency Buck and Boost DC-to-DC conversion Switch mode power supply LED or Keypad backlight for mobile application Low power consumption applications Ultra high-speed switching Reverse Voltage and Current Protection Clamping & Protection MARKETS Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 40 V VRWM Working Peak Reverse Voltage VR(RMS) RMS Reverse Voltage 28 V IO Average Rectified Output Current 1 A IFSM Non-repetitive Peak Forward Surge Current @ t≤8.3ms 30 A PD Power Dissipation 150 mW RΘJA Thermal Resistance from Junction to Ambient 833 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=10μA 40 V Reverse current IR VR=40V 50 μA Forward voltage VF IF=1.0A 0.53 V Diode capacitance Cd VR=1V; f=1MHz; Tj=25°C 50 pF VR=10V; f=1MHz; Tj=25° C 20 pF Reverse recovery time trr IF=IR=10mA; RL=100Ω; IR(meas)=1mA 15 nS
DFN 1.6X0.8-2L Plastic-Encapsulate Schottky Barrier Diode Typical Characteristics
DFN 1.6X0.8-2L Plastic-Encapsulate Schottky Barrier Diode DFN 1.6X0.8-2L Package Outline Dimensions Lead finish: NiPdAu DFN 1.6X0.8-2L Suggested Pad Layout