STGD6M65DF2 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 20
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 DPAK (TO-252) type A2 package information
- 4.2 DPAK (TO-252) packing information
Features
6 µs of short-circuit withstand time V CE(sat) = 1.55 V (typ.) @ IC = 6 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode
Applications
Motor control UPS PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGD6M65DF2 G6M65DF2 DPAK Tape and reel
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC Continuous collector current at TC = 25 °C 12 A Continuous collector current at TC = 100 °C 6 A ICP(1) Pulsed collector current 24 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 12 A Continuous forward current at TC = 100 °C 6 A IFP (1) Pulsed forward current 24 A PTOT Total dissipation at TC = 25 °C 88 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature range - 55 to 175 °C Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 1.7 °C/W RthJC Thermal resistance junction-case diode 5 °C/W RthJA Thermal resistance junction-ambient 100 °C/W
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 250 µA 650 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 6 A 1.55 2.0 V VGE = 15 V, IC = 6 A, TJ = 125 °C 1.9 VGE = 15 V, IC = 6 A, TJ = 175 °C 2.1 VF Forward on-voltage IF = 6 A 2.2 V IF = 6 A, TJ = 125 °C 2.0 IF = 6 A, TJ = 175 °C 1.9 VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 5 6 7 V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ±250 µA Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V - 530 - pF Coes Output capacitance - 31 - Cres Reverse transfer capacitance - 11 - Qg Total gate charge VCC = 520 V, IC = 6 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") - 21.2 - nC Qge Gate-emitter charge - 5.2 - Qgc Gate-collector charge - 8.8 -
Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 6 A, VGE = 15 V, RG = 22 Ω (see Figure 29: " Test circuit for inductive load switching" ) 15 - ns tr Current rise time 5.8 - ns (di/dt)on Turn-on current slope 828 - A/µs td(off) Turn-off-delay time 90 - ns tf Current fall time 130 - ns Eon(1) Turn-on switching energy 0.036 - mJ Eoff(2) Turn-off switching energy 0.200 - mJ Ets Total switching energy 0.236 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 6 A, VGE = 15 V, RG = 22 Ω TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) 17 - ns tr Current rise time 7 - ns (di/dt)on Turn-on current slope 685 - A/µs td(off) Turn-off-delay time 86 - ns tf Current fall time 205 - ns Eon(1) Turn-on switching energy 0.064 - mJ Eoff(2) Turn-off switching energy 0.290 - mJ Ets Total switching energy 0.354 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - µs Notes: (1)Turn-on switching energy includes reverse recovery of the diode. (2)Turn-off switching energy also includes the tail of the collector current.
Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 6 A, VR = 400 V, VGE = 15 V (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 140 - ns Qrr Reverse recovery charge - 210 - nC Irrm Reverse recovery current - 6.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 430 - A/µs Err Reverse recovery energy - 16 - µJ trr Reverse recovery time IF = 6 A, VR = 400 V, VGE = 15 V TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 200 - ns Qrr Reverse recovery charge - 473 - nC Irrm Reverse recovery current - 9.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 428 - A/µs Err Reverse recovery energy - 32 - µJ
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current
3 Test circuits
Figure 29: Test circuit for inductive load switching Figure 30: Gate charge test circuit Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform A A C E G B RG+ G C 3.3 µF 1000 µF L=100 µH VCC E D.U.T B AM015 04v 1 AM01505v1 Vi ≤ VGMAX PW IG=CONST VCC
12 V 47 kΩ 1 kΩ
100 Ω 2.7 kΩ 47 kΩ 1 kΩ 2200 µF D.U.T. 100 nF VG
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 DPAK (TO-252) type A2 package information
Figure 33: DPAK (TO-252) type A2 package outline 0068772_type-A2_rev21
Table 8: DPAK (TO-252) type A2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0°
Figure 34: DPAK (TO-252) recommended footprint (dimensions are in mm)
4.2 DPAK (TO-252) packing information
Figure 35: DPAK (TO-252) tape outline
Figure 36: DPAK (TO-252) reel outline Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3
5 Revision history
Table 10: Document revision history Date Revision Changes 30-Nov-2015 1 First release. 13-Jan-2016 2 Modified: Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes 04-Aug-2016 3 Updated: Table 2: "Absolute maximum ratings", Table 4: "Static characteristics", Table 6: "IGBT switching characteristics (inductive load)",Table 7: "Diode switching characteristics (inductive load)". Updated Figure 9: "Forward bias safe operating area", Figure 12: "Normalized VGE(th) vs. junction temperature", Figure 20: "Short-circuit time and current vs. VGE",Figure 23: "Reverse recovery current vs. diode current slope". Changed:Figure 25: "Reverse recovery charge vs. diode current slope", and Figure 26: "Reverse recovery energy vs. diode current slope". Document status promoted from preliminary to production data.