STGW60V60DF_V01 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 20

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-247 package information
  • 4.2 TO-247 long leads package information
  • 4.3 TO-3P package information
  • 5 Revision history

Features

  • Maximum junction temperature: TJ = 175 °C
  • Tail-less switching off
  • VCE(sat) = 1.85 V (typ.) @ IC = 60 A
  • Tight parameter distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

Applications

  • Photovoltaic inverters
  • Uninterruptible power supply
  • Welding
  • Power factor correction
  • Very high frequency converters

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2 or TAB) G (1) E (3) TO-247 TO-3P TAB TO-247 long leads Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current level is limited by bond wires
  2. Pulse width limited by ma ximum junction temperature.

Table 3. Thermal data

2 Electrical characteristics

TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Table 5. Dynamic characteristics

Table 6. IGBT switching characteristics (inductive load)

  1. Including the reverse recovery of the diode.
  2. Including the tail of the collector current.

Table 7. Diode switching characteristics (inductive load)

2.1 Electrical characteristics (curves)

Figure 2. Power dissipation vs. case Figure 3. Collector current vs. temperature case Figure 4. Output characteristics @ 25 °C Figure 5. Output characteristics @ 175 °C Figure 6. VCE(SAT) vs. junction temperature Figure 7. V CE(SAT) vs. collector current

13 VVGE=15 V

3 Test circuits

Figure 28. Test circuit for inductive load Figure 29. Gate charge test circuit Figure 30. Switching waveform Figure 31. Diode recovery time waveform

9 Nȍ Nȍ

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-247 package information

Figure 32. TO-247 package outline

Table 8. TO-247 package mechanical data

4.2 TO-247 long leads package information

Figure 33. TO-247 long leads package outline

Table 9. TO-247 long leads package mechanical data

4.3 TO-3P package information

Figure 34. TO-3P package outline

Table 10. TO-3P mechanical data

5 Revision history

Table 11. Document revision history 15-Jan-2013 1 Initial release. 04-Jun-2013 3 Updated Table 4: Static characteristics and Figure 12 on page 7. Document status changed from preliminary to production data. 21-Jun-2013 4 Updated Figure 3: Collector current vs. temperature case. 12-Jul-2013 5 Updated R thJC value for Diode in Table 3: Thermal data. 21-Oct-2013 6 Updated title, features and description in cover page. Updated Table 2 Table 4 and Table 6. Updated Figure 10: Transfer characteristics.