STGW60H65DFB_V01 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 21

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-247 package information
  • 4.2 TO-247 long leads package information
  • 4.3 TO-3P package information
  • 5 Ordering information

Features

  • Maximum junction temperature: T J = 175 °C
  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: V CE(sat) = 1.6 V (typ.) @ IC = 60 A
  • Tight parameter distribution
  • Safe paralleling
  • Positive V CE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

Applications

  • Photovoltaic inverters
  • High-frequency converters

Description

These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW60H65DFB STGWT60H65DFB STGWA60H65DFB Trench gate field-stop 650 V, 60 A high speed HB series IGBT STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet DS9535 - Rev 8 - July 2019 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Current level is limited by bond wires.
  2. Pulse width is limited by maximum junction temperature.
  3. Defined by design, not subject to production test.

Table 2. Thermal data

2 Electrical characteristics

TJ = 25 °C unless otherwise specified Table 3. Static characteristics Table 4. Dynamic characteristics

Electrical characteristics

Table 5. IGBT switching characteristics (inductive load)

  1. Including the reverse recovery of the diode.
  2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

2.1 Electrical characteristics (curves)

Figure 1. Output characteristics (TJ = 25 °C) Figure 2. Output characteristics (TJ = 175 °C) Figure 3. Transfer characteristics Figure 4. Collector current vs case temperature Figure 5. Power dissipation vs case temperature Figure 6. VCE(sat) vs junction temperature

2.6 V GE =15V IC =120A

Figure 7. VCE(sat) vs collector current Figure 8. Forward bias safe operating area Figure 9. Diode VF vs forward current Figure 10. Normalized V(BR)CES vs junction temperature Figure 11. Normalized VGE(th) vs junction temperature Figure 12. Gate charge vs gate-emitter voltage

0 Q g (nC)50 100 150 200

Figure 13. Switching energy vs temperature

25 TJ(°C)50 75 100 125

Figure 14. Switching energy vs gate resistance

2 R G (Ω)6 10

Figure 15. Switching energy vs collector current

0 IC (A)20 40 60 80

Figure 16. Switching energy vs collector emitter voltage

150 V CE (V)250 350 450

Figure 17. Switching times vs collector current Figure 18. Switching times vs gate resistance

Figure 19. Reverse recovery current vs diode current Figure 20. Reverse recovery time vs diode current slope Figure 21. Reverse recovery charge vs diode current Figure 22. Reverse recovery energy vs diode current Figure 23. Capacitance variations

0.1 V CE (V)1 10

Figure 24. Collector current vs switching frequency

3 Test circuits

Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit Figure 29. Switching waveform Figure 30. Diode reverse recovery waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB

Package information

4.1 TO-247 package information

Figure 31. TO-247 package outline

Table 7. TO-247 package mechanical data

4.2 TO-247 long leads package information

Figure 32. TO-247 long leads package outline

Table 8. TO-247 long leads package mechanical data

4.3 TO-3P package information

Figure 33. TO-3P package outline

Table 9. TO-3P package mechanical data

5 Ordering information

Table 10. Order codes

Ordering information

Revision history

Table 11. Document revision history 12-Mar-2013 1 Initial release. Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves). 31-Oct-2013 3 Updated VCE(sat) in Table 4: Static characteristics. 24-Feb-2014 4 Updated title and description in cover page. and Table 6: IGBT switching characteristics (inductive load). Power dissipation vs. case temperature, Figure 8: VCE(sat) vs. Reverse recovery current vs. diode current slope. Added Figure 25: Collector current vs. switching frequency. Updated Section 4: Package information. Text edits throughout document. long leads package, with accompanying information and data. Text edits throughout document. Updated Table 1. Absolute maximum ratings.