G5N150UF

SGS5N150UF FAIRCHILD | Alldatasheet

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 High Speed Switching  Low Saturation Voltage : V CE(sat) = 4.7 V @ IC = 5A  High Input Impedance Absolute Maximum Ratings TC = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Description SGS5N150UF Units VCES Collector-Emitter Voltage 1500 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ T C = 25°C1 0 A Collector Current @ T C = 100°C5 A ICM (1) Pulsed Collector Current 20 A PD Maximum Power Dissipation @ T C = 25°C5 0 W Maximum Power Dissipation @ T C = 100°C2 0 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Typ. Max. Units RθJC Thermal Resistance, Junction-to-Case -- 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W Application Switching Power Supply - High Input Voltage Off-line Converter G C E TO-220F G C E G C E

SGS5N150UF Rev. B SGS5N150UF ©2003 Fairchild Semiconductor Corporation Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage V GE = 0V, IC = 1mA 1500 -- -- V ICES Collector Cut-Off Current V CE = VCES, VGE = 0V -- -- 1.0 mA IGES G-E Leakage Current V GE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage I C = 5mA, VCE = VGE 2.0 3.0 4.0 V VCE(sat) Collector to Emitter Saturation Voltage IC = 5A, VGE = 10V -- 4.7 5.5 V Dynamic Characteristics Cies Input Capacitance VCE = 10V, VGE = 0V, f = 1MHz -- 780 -- pF Coes Output Capacitance -- 130 -- pF Cres Reverse Transfer Capacitance -- 70 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 600 V IC = 5A RG =10Ω VGE = 10V Inductive Load TC = 25°C -- 10 -- ns tr Rise Time -- 15 -- ns td(off) Turn-Off Delay Time -- 30 50 ns tf Fall Time -- 70 120 ns Eon Turn-On Switching Loss -- 190 -- uJ Eoff Turn-Off Switching Loss -- 100 -- uJ Ets Total Switching Loss -- 290 580 uJ Qg Total Gate Charge VCE = 600 V, IC = 5A VGE = 10V -- 30 45 nC Qge Gate-Emitter Charge -- 3 5 nC Qgc Gate-Collector Charge -- 15 25 nC

SGS5N150UF Rev. B SGS5N150UF ©2003 Fairchild Semiconductor Corporation 1E-5 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse Thermal Response [Zthjc] Rectangular Pulse Duration [sec] Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Maximum Collector Current vs. Case Temperature Fig 4. Saturation Voltage vs. Case Temperature Fig 5. Load Current vs. Frequency Fig 6. Transient Thermal Impedance of IGBT Junction to Case 0 5 10 15 20 20 V Vge=5 V 15 V 10 V Ic [A] Vce [V] 0 4 8 1 21 62 0 Vge=10V Tc = 100℃ Tc = 25℃ Ic [A] Vce [V] 25 50 75 100 125 150 Vge = 10V Tc [℃] Ic [A] 20 40 60 80 100 120 140 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Vge=10V Ic = 5A Ic =10A Vce(sat) [V] Tc [℃] 0.1 1 10 100 1000 Duty cycle : 50% Tc = 100 o C Power Dissipation = 12W Vcc = 600V Load Current : peak of square wave Load Current [A] Frequency [kHz] Pdm Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC

SGS5N150UF Rev. B SGS5N150UF ©2003 Fairchild Semiconductor Corporation 01 0 2 0 3 0 Common Emitter RL = 120Ω , VCC = 600V TC = 25 o C Gate Charge, Qg [nC] Gate - Emitter Voltage, V GE [V] 20 40 60 80 100 200 400 600 800 1000 1200 Vcc = 600V Rg = 10Ω Vge = 10V Ic = 3A Ic = 5A Ic = 10A Energy [uJ] Tc [℃] 0 5 10 15 20 25 30 100 200 300 400 500 600 Vcc = 600V Ic = 5A Esw Eon Eoff Energy [uJ] Rg [Ω ] 11 0 200 400 600 800 1000 1200 Cres Coes Cies Capacitance [pF] Vce [V] Fig 8. Typical Gate Charge Characteristic Fig 9. Typical Switching Loss vs. Gate Resistance Fig 10. Typical Switching Loss vs. Case Temperature Fig 11. Typical Switching Loss vs. Collector Current Fig 12. Turn-Off SOA 468 1 0 0.2 0.4 0.6 0.8 1.0 1.2 Vcc = 600V Rg = 10Ω Tc = 100℃ Eon Eoff Esw Energy [mJ] Ic [A] 1 10 100 1000 Safe Operating Area Vge = 20V, Tc = 100℃ Ic [A] Vce [V] Fig 7. Typical Capacitance vs. Collector to Emitter Voltage

©2003 Fairchild Semiconductor Corporation SGS5N150UF Rev. B SGS5N150UF Package Dimension (7.00) (0.70) MAX1.47 (30 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50+0.10 –0.05 TO-220F (FS PKG CODE AQ) Dimensions in Millimeters

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