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Technical content

Features

„ 90% Efficiency „ Adjustable Output from VIN to 22V „ 4A, 0.125Ω, 22V Power MOSFET „ 2.5V to 5.5V Input Range „ 600kHz/1.2MHz Switching Frequency „ TDFN3X3-10 Package

Applications

„ LCD Displays „ Portable Applications „ Hand-Held Devices General Description The G5110 boost converter incorporate high-per- formance, current-mode, and frequency selectable pulse width modulation (PWM) circuitry with a built-in N-channel MOSFET to provide a highly effi- cient regulator. The G5110 ’s frequency can be selected by user to operate at either 600kHz or 1.2MHz. High switching frequency allows easily filtering and faster loop per- formance. An external compensation pin provides the user flexibility in determining loop dynamics, allowing the use of small, low ESR ceramic output capacitors. The current-mode architecture provides fast transient response to pulsed loads. The internal N-channel MOSFET can produce output voltage as high as 22V. User programmed soft-start with an external capacitor determines the input current ramp rate. The G5110 is available in a 10-pin TDFN3X3 package.

Ordering Information

NUMBER MARKING TEMP. RANGE PACKAGE (Green) G5110RE1U 5110 -40 °C to 85°C TDFN3X3-10 Note :RE: TDFN3X3-10 1: Bonding Code U: Tape & Reel Pin Configuration Typical Application Circuit Note: Recommend connecting the Thermal Pad to the Ground or let it keep floating. TDFN3X3-10 G5110 3 8 FREQ IN GND TDFN3X3-10 3 8 SHDN COMP FB SS LX GND LX Thermal Pad IN LX SHDN FB G5110 3.6µH VIN 4.5V to 5.5V VOUT LX 4.7µF 25V 6.3V 10µF GND GND FREQ SS COMP 10pF 27kΩ 300kΩ 100kΩ 330pF 10Ω C10 1µF C12 33nF 4.7µF 25V 4.7µF 25V Note: Recommend connecting the Thermal Pad to the Ground or let it keep floating. TDFN3X3-10 G5110 3 8 FREQ IN GND TDFN3X3-10 3 8 SHDN COMP FB SS LX GND LX Thermal Pad Note: Recommend connecting the Thermal Pad to the Ground or let it keep floating. TDFN3X3-10 G5110 3 8 FREQ IN GND TDFN3X3-10 3 8 SHDN COMP FB SS LX GND LX Thermal Pad IN LX SHDN FB G5110 3.6µH VIN 4.5V to 5.5V VOUT LX 4.7µF 25V 6.3V 10µF GND GND FREQ SS COMP 10pF 27kΩ 300kΩ 100kΩ 330pF 10Ω C10 1µF C12 33nF 4.7µF 25V 4.7µF 25V