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Technical content

Features

  • Optimized for Very Low VCEsat
  • Low Switching Loss Reduces System Power Dissipation
  • 5 /C0109s Short−Circuit Capability
  • These are Pb−Free Devices Typical Applications
  • Solar Inverters
  • Uninterruptible Power Supples (UPS)
  • Motor Drives ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC 100 A Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C tSC 5 /C0109s Gate−emitter voltage Transient Gate−Emitter Voltage VGE /C003620 /C003630 V Power Dissipation @ TC = 25°C @ TC = 100°C PD 223 W Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−247 CASE 340L STYLE 4 C G

50 A, 600 V

VCEsat = 1.50 V E Device Package Shipping

ORDERING INFORMATION

NGTG50N60FWG TO −247 (Pb−Free)

30 Units / Rail

http://onsemi.com A = Assembly Location Y = Year WW = Work Week G = Pb −Free Package MARKING DIAGRAM G50N60F AYWWG G E C

http://onsemi.com THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT R/C0113JC 0.56 °C/W Thermal resistance junction−to−ambient R/C0113JA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 /C0109A V(BR)CES 600 − − V Collector−emitter saturation voltage VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 150°C VCEsat 1.25 1.45 1.7 1.7 V Gate−emitter threshold voltage VGE = VCE, IC = 350 /C0109A VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − 0.5 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA DYNAMIC CHARACTERISTIC Input capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies − 7300 − pF Output capacitance Coes − 195 − Reverse transfer capacitance Cres − 170 − Gate charge total VCE = 480 V, IC = 50 A, VGE = 15 V Qg − 310 − nC Gate to emitter charge Qge − 60 − Gate to collector charge Qgc − 150 − SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 /C0087 VGE = 0 V/ 15 V* td(on) − 117 − ns Rise time tr − 43 − Turn−off delay time td(off) − 285 − Fall time tf − 105 − Turn−on switching loss Eon − 1.1 − mJ Turn−off switching loss Eoff − 1.2 − Total switching loss Ets − 2.3 − Turn−on delay time TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 /C0087 VGE = 0 V/ 15 V* td(on) − 112 − ns Rise time tr − 45 − Turn−off delay time td(off) − 300 − Fall time tf − 214 − Turn−on switching loss Eon − 1.4 − mJ Turn−off switching loss Eoff − 2.0 − Total switching loss Ets − 3.4 − *Includes diode reverse recovery loss using NGTB50N60FWG.

Figure 1. Output Characteristics Figure 2. Output Characteristics Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance

8 V7 V

7 V to 8 V

2.5 IC = 100 A

Figure 12. Switching Loss vs. Rg Figure 13. Switching Time vs. Rg Figure 14. Switching Loss vs. VCE Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area

1000 SWITCHING LOSS (mJ)

Figure 17. Reverse Bias Safe Operating Area

Figure 20. Definition of Turn On Waveform

Figure 21. Definition of Turn Off Waveform

http://onsemi.com PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F N P A K W F D G U E 0.25 (0.010) M YQ S J H C 123 −T− −B− −Y− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 PL 3 PL 0.63 (0.025) M TB M −Q− L DIM MIN MAX MIN MAX INCHESMILLIMETERS A 20.32 21.08 0.800 8.30 B 15.75 16.26 0.620 0.640 C 4.70 5.30 0.185 0.209 D 1.00 1.40 0.040 0.055 E 1.90 2.60 0.075 0.102 F 1.65 2.13 0.065 0.084 G 5.45 BSC 0.215 BSC H 1.50 2.49 0.059 0.098 J 0.40 0.80 0.016 0.031 K 19.81 20.83 0.780 0.820 L 5.40 6.20 0.212 0.244 N 4.32 5.49 0.170 0.216 Q 3.55 3.65 0.140 0.144 U 6.15 BSC 0.242 BSC W 2.87 3.12 0.113 0.123 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a numb er of patents, trademarks, reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 NGTG50N60FWD LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative