G4PC30F

IRG4PC30F IRF | Alldatasheet

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Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 31 IC @ TC = 100°C Continuous Collector Current 17 A ICM Pulsed Collector Current /G81 120 ILM Clamped Inductive Load Current /G82 120 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy /G83 10 mJ PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) /G49/G52/G47/G34/G50/G43/G33/G30/G46 /G46/G61/G73/G74/G20 /G53/G70/G65/G65/G64/G20 /G49/G47/G42/G54/G49/G4E/G53/G55/G4C/G41/G54/G45/G44/G20 /G47/G41/G54/G45/G20 /G42/G49/G50/G4F/G4C/G41/G52/G20 /G54/G52/G41/G4E/G53/G49/G53/G54/G4F/G52 /G50/G44/G20/G39/G31/G34/G35/G39/G42 E C G n-channel TO-247AC FeaturesFeaturesFeaturesFeaturesFeatures  Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry standard TO-247AC package  Generation 4 IGBT's offer highest efficiency available  IGBT's optimized for specified application conditions  Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Benefits VCES = 600V VCE(on) typ. = 1.59V @V GE = 15V, IC = 17A 1229//00 Parameter Typ. Max. Units R θJC Junction-to-Case ––– 1.2 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– ° C/W RθJA Junction-to-Ambient, typical socket mount ––– 40 Wt Weight 6 (0.21) ––– g (oz) Thermal Resistance Absolute Maximum Ratings W www.irf.com 1

/G49/G52/G47/G34/G50/G43/G33/G30/G46 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 51 77 I C = 17A Q ge Gate - Emitter Charge (turn-on) — 7.9 12 nC V CC = 400V See Fig. 8 Q gc Gate - Collector Charge (turn-on) — 19 28 V GE = 15V td(on) Turn-On Delay Time — 21 — tr Rise Time — 15 — TJ = 25°C td(off) Turn-Off Delay Time — 200 300 I C = 17A, VCC = 480V tf Fall Time — 180 270 V GE = 15V, RG = 23Ω Eon Turn-On Switching Loss — 0.23 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 1.18 — mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss — 1.41 2.0 td(on) Turn-On Delay Time — 20 — TJ = 150°C, tr Rise Time — 16 — IC = 17A, VCC = 480V td(off) Turn-Off Delay Time — 290 — VGE = 15V, RG = 23Ω tf Fall Time — 350 — Energy losses include "tail" Ets Total Switching Loss — 2.5 — mJ See Fig. 13, 14 LE Internal Emitter Inductance — 13 — nH Measured 5mm from package C ies Input Capacitance — 1100 — VGE = 0V C oes Output Capacitance — 74 — pF V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance — 14 —ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600—— VV GE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage /G8418 —— VV GE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage— 0.69 — V/°CV GE = 0V, IC = 1.0mA — 1.59 1.8 I C = 17A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage— 1.99 — IC = 31A See Fig.2, 5 — 1.7 — IC = 17A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V CE = VGE , IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage— -11 — mV/°CV CE = VGE , IC = 250µA gfe Forward Transconductance /G85 6.1 10 — SV CE = 100V, IC = 17A —— 250 V GE = 0V, VCE = 600V —— 2.0 V GE = 0V, VCE = 10V, TJ = 25°C —— 1000 V GE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current —— ±100 nA V GE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns /G84Pulse width ≤ 80µs; duty factor ≤ 0.1%. /G85Pulse width 5.0µs, single shot. Notes: /G81Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) /G82VCC = 80%(VCES ), VGE = 20V, L = 10µH, RG = 23Ω , (See fig. 13a) /G83Repetitive rating; pulse width limited by maximum junction temperature.

/G49/G52/G47/G34/G50/G43/G33/G30/G46 www.irf.com 3 Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 1000 1 10 CE CI , Collector-to-Emitter Current (A) V , Collector-to-Emitter Voltage (V) T = 150°C T = 25°C J J V = 15V 20µs PULSE WIDTH GE A 1 100 1000 56789 1 0 1 1 1 2 1 3 CI , Collector-to-Emitter Current (A) GE T = 25°C T = 150°C J J V , Gate-to-Emitter Voltage (V) A V = 50V 5µs PULSE WIDTH CC 0.1 1 10 100 f, Frequenc y (kHz ) Load Current (A) A 60% of rated voltage Ideal di odes Square wave: For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Triangular wave: Clamp voltage: 80% o f rated Power Dissipation = 24W

/G49/G52/G47/G34/G50/G43/G33/G30/G46 4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 CEV , Collector-to-Emitter Voltage (V) V = 15V 80µs PULSE WIDTH GE A T , Junction Temperature (°C )J I = 8.5A I = 17A I = 34A C C C 0.01 0.1 t , Rectangular Pulse Duration (sec)1 thJC D = 0. 50 0.01 0.02 0.05 0.10 0.20 SIN G LE P ULSE (THERMAL RESPONSE) Thermal Response (Z ) P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T J DM thJC C 25 50 75 100 125 150 Maximum DC Collector Current (A) T , Case Temperature (°C)C V = 15V GE

/G49/G52/G47/G34/G50/G43/G33/G30/G46 www.irf.com 5 Fig. 10 - Typical Switching Losses vs. Junction Temperature Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 400 800 1200 1600 2000 1 10 100 CE C, Capacitance (pF) V , Collector-to-Emitter Voltage (V) A C ies C res C oes VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce SHORTED Cres = Cce Coes = Cce + Cgc 0 1 02 03 04 05 06 0 GEV , Gate-to-Emitter Voltage (V) gQ , Total Gate Charge (nC) A V = 400V I = 17A CE C 1.30 1.35 1.40 1.45 1.50 0 1 02 03 04 05 06 0 Total Switching Losses (mJ) A V = 480V V = 15V T = 25°C I = 17A R , Gate Resistance ( Ω )G CC GE J C 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 Total Switching Losses (mJ) A T , Junction Temperature (°C)J R = 23 Ω V = 15V V = 480V I = 8.5A I = 17A I = 34A G GE CC C C C

/G49/G52/G47/G34/G50/G43/G33/G30/G46 6 www.irf.com Fig. 12 - Turn-Off SOAFig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 02 03 04 0 C Total Switching Losses (mJ) I , Collector-to-Emitter Current (A ) A R = 23 Ω T = 150°C V = 480V V = 15V G J CC GE 100 1000 1 10 100 1000 C CE GE V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) SAFE OPERATING AREA V = 20V T = 125°C GE J

/G49/G52/G47/G34/G50/G43/G33/G30/G46 www.irf.com 7 480V

4 X IC @ 25°C

D.U.T. 50V L V *C /G81 /G82 * Driver same type as D.U.T.; Vc = 80% of Vce(max ) * Note: Due to the 50V p ower su p p ly, p ulse width and inductor w ill increase to obtain rated Id. 1000V Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit 480µF960V 0 - 480V R L = t=5µsd(on)t tftr 90% td(off) 10% 90% 10%5% VC IC E on E off ts on offE = (E +E ) /G81 /G82 /G83 Fig. 14b - Switching Loss Waveforms 50V Driver* 1000V D.U.T. IC CV /G81/G20 /G82 /G83 L Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V

/G49/G52/G47/G34/G50/G43/G33/G30/G46 8 www.irf.com /G43/G61/G73/G65/G20/G4F/G75/G74/G6C/G69/G6E/G65/G20/G61/G6E/G64/G20/G44/G69/G6D/G65/G6E/G73/G69/G6F/G6E/G73/G20/G97/G20/G54/G4F/G2D/G32/G34/G37/G41/G43 Dimensions in Millimeters and (Inches) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) - D - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 3X 0.80 (.031) 0.40 (.016) 2.60 (.102) 3.00 (.118) 0.25 (.010) M C A S 4.30 (.170) 3.70 (.145) - C - 2X 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) DM MB - A - 15.90 (.626) 15.30 (.602) - B - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 5.45 (.215) NOTES:

1 DIMENSIONS & TOLERANCING

PER ANSI Y14.5M, 1982. 2 CONTROLLI NG DIMENSION : INCH.

3 DIM ENSIONS ARE SHO W N

(INCHES ).

4 CO NFO RM S TO JEDEC O UTLINE

TO-247AC. LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTO R 3 - EM ITTER 4 - COLLECTO R * LONGER LEADED (20mm ) VERSION AVAILABLE (TO-247AD ) TO ORDER ADD "-E" SUFFIX TO PART NUMBER IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00