STGD4M65DF2_V01 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Features

  • 6 µs of short-circuit withstand time
  • V CE(sat) = 1.6 V (typ.) @ IC = 4 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode

Applications

  • Motor control
  • UPS
  • PFC

Description

This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status STGD4M65DF2 Product summary Order code STGD4M65DF2 Marking G4M65DF2 Package DPAK Packing Tape and reel Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT STGD4M65DF2 Datasheet DS11397 - Rev 5 - December 2018 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

2 Electrical characteristics

TC = 25 °C unless otherwise specified Table 3. Static characteristics Table 4. Dynamic characteristics

Electrical characteristics

Table 5. IGBT switching characteristics (inductive load)

  1. Including the reverse recovery of the diode.
  2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load) Figure 28. Test circuit for inductive load switching)

2.1 STGD4M65DF2 electrical characteristics (curves)

Figure 1. Power dissipation vs. case temperature Figure 2. Collector current vs. case temperature Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C) Figure 5. VCE(sat) vs. junction temperature Figure 6. VCE(sat) vs. collector current

3 Test circuits

Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit Figure 30. Switching waveform Figure 31. Diode reverse recovery waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STGD4M65DF2

Package information

DS11397 - Rev 5 page 11/20

4.1 DPAK (TO-252) type A2 package information

Figure 32. DPAK (TO-252) type A2 package outline

Table 7. DPAK (TO-252) type A2 mechanical data

4.2 DPAK (TO-252) type C2 package information

Figure 33. DPAK (TO-252) type C2 package outline

Table 8. DPAK (TO-252) type C2 mechanical data

Figure 34. DPAK (TO-252) recommended footprint (dimensions are in mm)

4.3 DPAK (TO-252) packing information

Figure 35. DPAK (TO-252) tape outline

Figure 36. DPAK (TO-252) reel outline Table 9. DPAK (TO-252) tape and reel mechanical data

Revision history

Table 10. Document revision history 25-Nov-2015 1 First release. 05-Dec-2018 5 Added Section 4.2 DPAK (TO-252) type C2 package information.