G4BC30KD

IRG4BC30KD IRF | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 28 IC @ TC = 100°C Continuous Collector Current 16 ICM Pulsed Collector Current /G81 58 A ILM Clamped Inductive Load Current /G82 58 IF @ TC = 100°C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 58 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE E G n-channel C VCES = 600V VCE(on) typ. = 2.21V @V GE = 15V, IC = 16A Short Circuit Rated UltraFast IGBT 4/24/2000 PD -91595A Parameter Min. Typ. Max. Units R θJC Junction-to-Case - IGBT ––– ––– 1.2 R θJC Junction-to-Case - Diode ––– ––– 2.5 °C/W R θCS Case-to-Sink, flat, greased surface ––– 0.50 ––– R θJA Junction-to-Ambient, typical socket mount––– ––– 80 Wt Weight ––– 2 (0.07) ––– g (oz) Thermal Resistance Absolute Maximum Ratings W TO -220AB FeaturesFeaturesFeaturesFeaturesFeatures  High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V  Combines low conduction losses with high switching speed  tighter parameter distribution and higher efficiency than previous generations  IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes  Latest generation 4 IGBTs offer highest power density motor controls possible  HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses  This part replaces the IRGBC30KD2 and IRGBC30MD2 products  For hints see design tip 97003 Benefits www.irf.com 1

2 www.irf.com Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) — 67 100 I C = 16A Q ge Gate - Emitter Charge (turn-on) — 11 16 nC V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) — 25 37 V GE = 15V td(on) Turn-On Delay Time — 60 — tr Rise Time — 42 — TJ = 25°C td(off) Turn-Off Delay Time — 160 250 I C = 16A, VCC = 480V tf Fall Time — 80 120 V GE = 15V, RG = 23Ω Eon Turn-On Switching Loss — 0.60 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.58 — mJ and diode reverse recovery Ets Total Switching Loss — 1.18 1.6 See Fig. 9,10,14 tsc Short Circuit Withstand Time 10 —— µs V CC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V td(on) Turn-On Delay Time — 58 — TJ = 150°C, See Fig. 11,14 tr Rise Time — 42 — IC = 16A, VCC = 480V td(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 23Ω tf Fall Time — 160 — Energy losses include "tail" Ets Total Switching Loss — 1.69 — mJ and diode reverse recovery LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package C ies Input Capacitance — 920 — VGE = 0V C oes Output Capacitance — 110 — pF V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance — 27 —ƒ = 1.0MHz trr Diode Reverse Recovery Time — 42 60 ns T J = 25°C See Fig. — 80 120 T J = 125°C 14 IF = 12A Irr Diode Peak Reverse Recovery Current— 3.5 6.0 A T J = 25°C See Fig. — 5.6 10 T J = 125°C 15 VR = 200V Q rr Diode Reverse Recovery Charge — 80 180 nC T J = 25°C See Fig. — 220 600 T J = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs T J = 25°C See Fig. During tb — 160 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage/G83600 —— VV GE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage— 0.54 — V/°CV GE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage— 2.21 2.7 I C = 16A V GE = 15V — 2.88 — VI C = 28A See Fig. 2, 5 — 2.36 — IC = 16A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V CE = VGE , IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage— -12 — mV/°CV CE = VGE , IC = 250µA gfe Forward Transconductance /G84 5.4 8.1 — SV CE = 100V, IC = 16A ICES Zero Gate Voltage Collector Current—— 250 µA V GE = 0V, VCE = 600V —— 2500 V GE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V I C = 12A See Fig. 13 — 1.3 1.6 I C = 12A, TJ = 150°C IGES Gate-to-Emitter Leakage Current —— ±100 nA V GE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ns ns

www.irf.com 3 0.1 1 10 100 f, Frequency (KHz) LOAD CURRENT (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation = W 60% of rated voltage I Ideal diodes Square wave: Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 0.1 100 1 10 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C /G20 V = 15V 20µs PULSE WIDTH GE /G20T = 25 CJ o /G20T = 150 CJ o 0.1 100 5 10 15 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C /G20 V = 50V 5µs PULSE WIDTH CC /G20T = 25 CJ o /G20T = 150 CJ o

4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature 25 50 75 100 125 150 T , Case Temperature ( C) Maximum DC Collector Current(A) C ° 0.01 0.1 /G20 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C /G20 P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 /G20 SINGLE PULSE (THERMAL RESPONSE) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE /G20 V = 15V 80 us PULSE WIDTH GE /G20I = A8C /G20I = A16C /G20I = A32C 8.0A TJ , Junction Temperature ( °C )

www.irf.com 5 Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 40 50 1.00 1.10 1.20 1.30 1.40 1.50 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G /G20 V = 480V V = 15V T = 25 C I = 16A CC GE J C -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° /G20 R = Ohm V = 15V V = 480V G GE CC /G20I = A32C /G20I = A16C /G20I = A8C 23Ω R G , Gate Resistance ( Ω ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 20 40 60 80 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE /G20 V = 400V I = 16A CC C 1 10 100 300 600 900 1200 1500 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE /G20 V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc /G20C ies /G20C oes /G20C res 8.0A

6 www.irf.com 0 8 16 24 32 40 0.0 1.0 2.0 3.0 4.0 5.0 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C /G20 R = Ohm T = 150 C V = 480V V = 15V G J CC GE 100 1 10 100 1000 /G20 V = 20V T = 125 C GE J o V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C /G20 SAFE OPERATING AREA Fig. 12 - Turn-Off SOA Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 125°C Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 FM FInstantaneous Forward Current - I (A) Forward Voltage Drop - V (V ) T = 150°C T = 125°C T = 25°C J J J 23Ω

www.irf.com 7 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt 200 400 600 100 1000 fdi /dt - (A/µs) RRQ - (nC) I = 6.0A I = 12A I = 24A V = 200V T = 125°C T = 25°C R J J F F F 100 1000 10000 100 1000 fdi /dt - (A/µ s) di(rec)M/dt - (A/µs) I = 12A I = 24A I = 6.0A F F F V = 200V T = 125°C T = 25°C R J J 120 160 100 1000 fdi /dt - (A/µs) t - (ns)rr I = 24A I = 12A I = 6.0AF F F V = 200V T = 125°C T = 25°C R J J 100 100 1000 fdi /dt - (A/µs) I - (A)IRR M I = 6.0A I = 12A I = 24AF F F V = 200V T = 125°C T = 25°C R J J

8 www.irf.com Same type device as D.U.T. D.U.T. 430µF80% of Vce Fig. 18a - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY W AVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

www.irf.com 9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D. U. T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 D.U.T. V *c 50V L 1000V 6000µF 100V /G46/G69/G67/G75/G72/G65/G20 /G31/G39/G2E/G20 /G43/G6C/G61/G6D/G70/G65/G64/G20 /G49/G6E/G64/G75/G63/G74/G69/G76/G65/G20 /G4C/G6F/G61/G64/G20 /G54/G65/G73/G74 /G43/G69/G72/G63/G75/G69/G74 /G46/G69/G67/G75/G72/G65/G20 /G32/G30/G2E/G20 /G50/G75/G6C/G73/G65/G64/G20 /G43/G6F/G6C/G6C/G65/G63/G74/G6F/G72/G20 /G43/G75/G72/G72/G65/G6E/G74 /G54/G65/G73/G74/G20 /G43/G69/G72/G63/G75/G69/G74 R L= 480V

4 X IC @25°C

/G46/G69/G67/G75/G72/G65/G20 /G31/G38/G65/G2E/G20 /G4D/G61/G63/G72/G6F/G20 /G57/G61/G76/G65/G66/G6F/G72/G6D/G73/G20 /G66/G6F/G72/G20/G46/G69/G67/G75/G72/G65/G20 /G31/G38/G61/G27/G73/G20/G54/G65/G73/G74/G20 /G43/G69/G72/G63/G75/G69/G74

10 www.irf.com /G4E/G6F/G74/G65/G73/G3A /G81Repetitive rating: VGE =20V; pulse width limited by maximum junction temperature (figure 20) /G82VCC =80%(V CES ), VGE =20V, L=10µH, RG = 23Ω (figure 19) /G83Pulse width ≤ 80µs; duty factor ≤ 0.1%. /G84Pulse width 5.0µs, single shot. /G43/G61/G73/G65/G20/G4F/G75/G74/G6C/G69/G6E/G65/G20/G97/G20/G54/G4F/G2D/G32/G32/G30/G41/G42 0.55 (.022) 0.46 (.018)3 X 2.92 (.115) 2.64 (.104) 1.32 (.052) 1.22 (.048) - B - 4.69 (.185) 4.20 (.165) 3.78 (.149) 3.54 (.139) - A - 6.47 (.255) 6.10 (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) 3 X 3.96 (.160) 3.55 (.140) 3 X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 10.54 (.415) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045)3 X 2.54 (.100) 1 2 3 CONFORMS TO JEDEC OUTLINE TO-220AB D im ensions in M illim eters and (Inches ) LEAD ASSIGNMENTS 1 - GATE 2 - COLLE CTO R 3 - EM ITTER 4 - COLLE CTO R NOTES:

1 DIMENSIONS & TOLERANCING

PER ANSI Y14.5M, 1982. 2 CONTROLLI NG DIMENSION : INCH.

3 DIM ENSIONS ARE SHO W N

(INCHES ).

4 CONFORMS TO JEDEC OUTLINE

TO-220AB. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00