DMG4812SSS DIODES | Alldatasheet

Document overview

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Technical content

Features

  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
  • Low R DS(ON) - minimizes conduction losses
  • Low V SD - reducing the losses due to body diode conduction
  • Low Q rr - lower Qrr of the integrated Schottky reduces body diode switching losses
  • Low gate capacitance (Q g/Qgs) ratio – reduces risk of shoot- through or cross conduction currents at high frequencies
  • Avalanche rugged – I AR and EAR rated
  • Lead Free, RoHS Compliant (Note 1)
  • "Green" Device (Note 2)
  • ESD Protected
  • Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  • DC-DC Converters
  • Power management functions Mechanical Data
  • Case: SO-8
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram Below
  • Weight: 0.072 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging DMG4812SSS-13 SO-8 2500 / Tape & Reel Notes: 1. No purposefully added lead. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Top View Top View Internal Schematic S D D G D D S S Logo Part no. Year: “09” = 2009 Xth week: 01 ~ 53 1 4 8 5 G4812SS YY WW Year: “10” = 2010 ESD PROTECTED

Document number: DS35071 Rev. 2 - 2 2 of 6 www.diodes.com January 2011 © Diodes Incorporated DMG4812SSS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 4) VGS = 10V Steady State TA = 25°C TA = 85°C ID 8 6.4 A Continuous Drain Current (Note 5) VGS = 10V t ≤ 10 sec TA = 25°C TA = 85°C ID 10.7 8.6 A Continuous Drain Current (Note 5) VGS = 4.5V t ≤ 10 sec TA = 25°C TA = 85°C ID 9.6 7.7 A Pulsed Drain Current (Note 6) IDM 45 A Avalanche Current (Notes 6 & 7) IAR 13 A Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH EAR 25.4 mJ Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 1.54 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R θJA 81 °C/W Power Dissipation (Note 5) PD 2.8 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) R θJA 45 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS - - 150 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 - 2.3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 11 15 mΩ VGS = 10V, ID = 10.7A - 16.5 18.5 VGS = 4.5V, ID = 9.6A Forward Transfer Admittance |Yfs| - 20 - S VDS = 5V, ID = 10.7A Diode Forward Voltage VSD - 0.36 0.5 V VGS = 0V, IS = 1A Maximum Body-Diode + Schottky Continuous Current IS - - 5 A - DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 1849 - pF VDS =15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 158 - pF Reverse Transfer Capacitance Crss - 123 - pF Gate Resistance Rg 0.54 2.0 4.0 Ω VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg - 18.5 - nC VDS = 15V, VGS = 10V, ID = 9.6A Total Gate Charge VGS = 10V Qg - 43 - nC Gate-Source Charge Qgs - 4.7 - nC Gate-Drain Charge Qgd - 4.0 - nC Turn-On Delay Time tD(on) - 6.62 - ns VGS = 10V, VDS = 15V, RG = 3Ω, RL = 15Ω, ID = 1A Turn-On Rise Time tr - 8.73 - ns Turn-Off Delay Time tD(off) - 36.41 - ns Turn-Off Fall Time tf - 4.69 - ns Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the use r’s specific board design. 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 1 oz. Copper, single sided , device is measured at t ≤ 10 sec. 6. Repetitive rating, pulse width limited by junction temperature. 7. I AR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing.

Document number: DS35071 Rev. 2 - 2 3 of 6 www.diodes.com January 2011 © Diodes Incorporated DMG4812SSS 0 0.5 1 1.5 2 Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS 30I, D RAIN CURRENT (A)D V = 2.0VGS V = 2.2VGS V = 2.5VGS V = 3.0VGS V = 3.5VGS V = 4.5VGS V = 4.0VGS Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS 0 1 1.5 2 2.5 30.5 30I, D RAIN CURRENT (A)D V = 85°CGS V = 125°CGS V = 25°CGS V = - 5 5 ° CGS V = 150°CGS V = 5 VDS 01 0 2 015 25 30 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D 0.05R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.04 0.01 0.02 0.03 V = 4.5VGS V = 10VGS 0 5 10 15 20 25 30 I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.01 0.02 0.04 R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.03 T = 8 5 ° CA T = 2 5 ° CA T = -55°CA T = 150°CA V = 4.5VGS T = 125°CA Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON 0.6 0.8 1.0 1.2 1.4 1.6 V = 4 . 5 V I = 10A GS D V = 1 0 V I = 20A GS D Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.01 0.03R , DRAIN-SOURCE ON-RESISTANCE ( )DSON ΩR , DRAIN-SOURCE ON-RESISTANCE ( )DSON Ω 0.02 V = 4.5V I = 10A GS D V = 10V I = 20A GS D

Document number: DS35071 Rev. 2 - 2 4 of 6 www.diodes.com January 2011 © Diodes Incorporated DMG4812SSS Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.5 1.0 1.5 2.0 2.5 3.0 V, GATE THRESHOLD VOLTAGE (V)GS(TH) I = 100mAD Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD I, S OURCE CURRENT (A)S T = 2 5 ° CA 0 5 10 15 20 25 30 Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS 1,000 10,000C, CAPACITANCE (pF) 100 Ciss Crss Coss f = 1MHz 01 02 0 3 0 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 10,000I, L E A K AGE CURRENT (µA) DSS T = 2 5 ° CA T = 8 5 ° CA T = 125°CA 0 5 10 15 20 25 30 35 40 45 Fig. 11 Gate-Charge Characteristics Q , TOTAL GATE CHARGE (nC) g 10V, GATE-SOURCE VOLTAGE (V) GS V = 15V I = 12.7A DS D

Document number: DS35071 Rev. 2 - 2 5 of 6 www.diodes.com January 2011 © Diodes Incorporated DMG4812SSS 0.001 0.01 0.1 1 10 100 Fig. 12 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.0001 1,000 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 80°C/W θ θ JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5 Package Outline Dimensions Suggested Pad Layout SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 θ 0° 8 ° All Dimensions in mm Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A 45° 7°~9° 0.254 X Y

Document number: DS35071 Rev. 2 - 2 6 of 6 www.diodes.com January 2011 © Diodes Incorporated DMG4812SSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated a nd all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com