DMG4435SSS DIODES | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Lead Free By Design/RoHS Compliant (Note 1)
  • "Green" Device (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SO-8
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram Below
  • Marking Information: See Page 5
  • Ordering Information: See Page 5
  • Weight: 0.072 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 3) Steady State (VGS = -4.5) TA = 25°C TA = 85°C ID -7.3 -4.7 A Pulsed Drain Current (Note 4) IDM -80 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 1.3 W Thermal Resistance, Junction to Ambient @TA = 25°C RθJA 96.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 4. Repetitive rating, pulse width limited by junction temperature. Top View Top View Internal Schematic S D D G D D S S

Document number: DS32041 Rev. 2 - 2 2 of 6 www.diodes.com March 2010 © Diodes Incorporated DMG4435SSS NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -1mA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -1.0 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -1.0 -1.7 -2.5 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - 13 16 mΩ VGS = -20V, ID = -11A 15 20 VGS = -10V, ID = -10A 21 29 VGS = -5V, ID = -5A Forward Transfer Admittance |Yfs| - 22 - S VDS = -5V, ID = -10A Diode Forward Voltage VSD - -0.74 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss - 1614 - pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 226 - pF Reverse Transfer Capacitance Crss - 214 - pF Gate Resistance Rg - 6.8 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge at 10V Qg - 35.4 - nC VGS = -10V, VDS = -15V, ID = -10A Total Gate Charge at 5V Qg - 18.9 - nC VGS = -5V, VDS = -15V, ID = -10A Gate-Source Charge Qgs - 4.6 - nC Gate-Drain Charge Qgd - 5.7 - nC Turn-On Delay Time tD(on) - 8.6 - ns VDS = -15V, VGS = -10V, RL = 1.5Ω, RGEN = 3Ω, Turn-On Rise Time tr - 12.7 - ns Turn-Off Delay Time tD(off) - 44.9 - ns Turn-Off Fall Time tf - 22.8 - ns Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 0 0.5 1 1.5 2 Fig. 1 Typical Output Characteristic -V , DRAIN-SOURCE VOLTAGE (V)DS -I , D RAIN CURRENT (A)D V = - 2 . 5 VGSV = - 2 . 2 VGS V = - 3 . 5 VGS V = - 3 . 0 VGS V = - 4 . 5 VGS V = - 4 . 0 VGS V = - 1 0 VGS 0 0.5 1 1.5 2 2.5 3 3.5 4 Fig. 2 Typical Transfer Characteristic -V , GATE-SOURCE VOLTAGE (V)GS 30-I , D RAIN CURRENT (A)D T = - 5 5 ° CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = - 5 VDS

Document number: DS32041 Rev. 2 - 2 3 of 6 www.diodes.com March 2010 © Diodes Incorporated DMG4435SSS NEW PRODUCT 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage -I , DRAIN-SOURCE CURRENT (A) D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = - 4 . 5 VGS V = - 1 0 VGS 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 -I , DRAIN CURRENT (A) D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA V = - 4 . 5 VGS 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = - 1 0 V I = -20A GS D V = - 4 . 5 V I = -10A GS D 0.01 0.02 0.03 0.04 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON Fig. 6 On-Resistance Variation with T emperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A V = - 1 0 V I = -20A GS D V = - 4 . 5 V I = -10A GS D 0.5 1.0 1.5 2.0 2.5 3.0 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A -V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = - 1 m AD I = -250µAD Fig. 8 Diode Forward Voltage vs. Current -V , SOURCE-DRAIN VOLTAGE (V)SD -I , S OURCE CURRENT (A)S T = 2 5 ° CA

Document number: DS32041 Rev. 2 - 2 4 of 6 www.diodes.com March 2010 © Diodes Incorporated DMG4435SSS NEW PRODUCT 100 1,000 10,000 0 5 10 15 20 25 30 Fig. 9 Typical Total Capacitance -V , DRAIN-SOURCE VOLTAGE (V)DS Ciss Crss Coss f = 1MHz 01 02 0 3 0 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage -V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 10,000-I , LEAKA GE CURRENT (nA) DSS T = 25°CA T = 85°CA T = 125°CA T = 150°CA 0 5 10 15 20 25 30 35 40 Q , TOTAL GATE CHARGE (nC) g V , GATE-THRESHOLD VOLTAGE (V)GS(TH) Fig. 11 Gate Threshold Voltage vs. Total Gate Charge Fig. 12 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 98°C/W θ θ JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5

Document number: DS32041 Rev. 2 - 2 5 of 6 www.diodes.com March 2010 © Diodes Incorporated DMG4435SSS NEW PRODUCT Ordering Information (Note 7) Part Number Case Packaging DMG4435SSS-13 SO-8 2500 / Tape & Reel Marking Information Package Outline Dimensions Suggested Pad Layout SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 θ 0° 8 ° All Dimensions in mm Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 G4435SS YY WW Logo Part no. Xth week: 01~53 Year: “09” = 2009 Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A 45° 7°~9° 0.254 X Y

Document number: DS32041 Rev. 2 - 2 6 of 6 www.diodes.com March 2010 © Diodes Incorporated DMG4435SSS NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated a nd all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com