LGE3401L LUGUANG | Alldatasheet
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Description
The G3401L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS -30V ⚫ ID (at VGS = -10V) -4.2A ⚫ RDS(ON) (at VGS = -10V) < 55mΩ ⚫ RDS(ON) (at VGS = -4.5V) < 69mΩ ⚫ RDS(ON) (at VGS = -2.5V) < 102mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging G3401L SOT-23-3 3401 3000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Continuous Drain Current ID -4.2 A Pulsed Drain Current (note1) IDM -30 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1.3 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 95 ºC/W Schematic diagram Marking and pin assignment SOT-23-3L P-Channel Enhancement Mode Power MOSFET http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210527-P1
Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 uA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -0.6 -0.85 -1.3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = - 4A -- 41 55 mΩVGS = -4.5V, ID = - 4A -- 48 69 VGS = -2.5V, ID = - 2A -- 65 102 Forward Transconductance gFS VDS=-5V,ID=-1A -- 10 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 950 -- pFOutput Capacitance Coss -- 115 -- Reverse Transfer Capacitance Crss -- 75 -- Total Gate Charge Qg VDD = -15V, ID = -4A, VGS = -4.5V -- 9.5 -- nCGate-Source Charge Qgs -- 2 -- Gate-Drain Charge Qgd -- 3 -- Turn-on Delay Time td(on) VDD = -15V, ID = -4A, RG = 6Ω -- 7 -- ns Turn-on Rise Time tr -- 3 -- Turn-off Delay Time td(off) -- 30 -- Turn-off Fall Time tf -- 12 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -4.2 A Body Diode Voltage VSD TJ = 25ºC, ISD = -1A, VGS = 0V -- -- -1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210527-P2
http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210527-P3
Symbol Dimensions in Millimeters MIN. NOM. MAX. A 2.80 2.90 3.00 B 1.50 1.60 1.70 C 1.00 1.10 1.20 D 0.30 0.40 0.50 E 0.25 0.40 0.55 G 1.90 H 0.00 - 0.10 J 0.047 0.127 0.207 K 2.60 2.80 3.00 All Dimensions in mm http://www.lgesemi .com mail:lge@lgesemi.comRevision:20210527-P6