HGTG30N60B3D_04 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 60A, 600V, TC = 25oC
  • 600V Switching SOA Capability J = 150oC
  • Short Circuit Rating
  • Low Conduction Loss
  • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 Symbol

Ordering Information

HGTG30N60B3D TO-247 G30N60B3D NOTE: When ordering, use the entire part number. G C E C E G FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 Data Sheet April 2004

©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60B3D UNITS Collector Current Continuous CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. V CE(PK) = 360V, TJ = 125oC, RG = 3Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV CES IC = 250µA, VGE = 0V 600 - - V Collector to Emitter Leakage Current I CES VCE = BVCES TC = 25oC - - 250 µA TC = 150oC- - 3 m A Collector to Emitter Saturation Voltage V CE(SAT) IC = IC110, VGE = 15V TC = 25oC - 1.45 1.9 V TC = 150oC- 1 . 7 2 . 1 V Gate to Emitter Threshold Voltage V GE(TH) IC = 250µA, VCE = VGE 4.2 5 6 V Gate to Emitter Leakage Current I GES VGE = ±20V - - ±250 nA Switching SOA SSOA T J = 150oC, RG = 3Ω, VGE = 15V, L = 100µH VCE (PK) = 480V 200 - - A VCE (PK) = 600V 60 - - A Gate to Emitter Plateau Voltage V GEP IC = IC110, VCE = 0.5 BVCES -7 . 2 - V On-State Gate Charge Q G(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 170 190 nC VGE = 20V - 230 250 nC Current Turn-On Delay Time t d(ON)I IGBT and Diode at TJ = 25oC, ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG = 3Ω , L = 1mH, Test Circuit (Figure 19) -3 6 - n s Current Rise Time t rI -2 5 - n s Current Turn-Off Delay Time t d(OFF)I - 137 - ns Current Fall Time t fI -5 8 - n s Turn-On Energy E ON - 550 800 µJ Turn-Off Energy (Note 3) E OFF - 680 900 µJ HGTG30N60B3D

  1. Prior to assembly into a circuit, all leads should be kept

“ECCOSORBD™ LD26” or equivalent.

  1. When devices are removed by hand from their carriers, the

means - for example, with a metallic wristband.

  1. Tips of soldering irons should be grounded.
  2. Devices should never be inserted into or removed from
  3. Gate Voltage Rating - Never exceed the gate-voltage rating

damage to the oxide layer in the gate region.

  1. Gate Termination - The gates of these devices are
  2. Gate Protection - These devices do not have an internal

protection is required an external Zener is recommended. MAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). d(OFF)I and td(ON)I are defined in Figure 20. allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. conduction losses (PC) are approximated by PC = (VCE x ICE)/2. OFF; i.e., the collector current equals zero (ICE = 0). FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ FACT Quiet Series™ FAST  FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ Rev. I10 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™