STGP30M65DF2 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 16
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 type A package information
- 5 Revision history
Features
6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode
Applications
Motor control UPS PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGP30M65DF2 G30M65DF2 TO-220 Tube 1 2 3 TO-220 TAB
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC Continuous collector current at TC = 25 °C 60 A IC Continuous collector current at TC = 100 °C 30 A ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 60 A IF Continuous forward current at TC = 100 °C 30 A IFP(1) Pulsed forward current 120 A PTOT Total dissipation at TC = 25 °C 258 W TSTG Storage temperature range -55 to 150 °C TJ Operating junction temperature range -55 to 175 °C Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.58 °C/W RthJC Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 250 µA 650 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 30 A 1.55 2.0 V VGE = 15 V, IC = 30 A, TJ = 125 °C 1.95 VGE = 15 V, IC = 30 A, TJ = 175 °C 2.1 VF Forward on-voltage IF = 30 A 1.85 2.65 V IF = 30 A, TJ = 125 °C 1.6 IF = 30 A, TJ = 175 °C 1.5 VGE(th) Gate threshold voltage VCE = VGE, IC = 500 µA 5 6 7 V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 µA Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V - 2490 - pF Coes Output capacitance - 143 - Cres Reverse transfer capacitance - 46 - Qg Total gate charge VCC = 520 V, IC = 30 A, VGE = 0 to 15 V (see Figure 30: "Gate charge test circuit") - 80 - nC Qge Gate-emitter charge - 18 - Qgc Gate-collector charge - 32 -
Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω (see Figure 29: "Test circuit for inductive load switching" ) 31.6 - ns tr Current rise time 13.4 - ns (di/dt)on Turn-on current slope 1791 - A/µs td(off) Turn-off-delay time 115 - ns tf Current fall time 110 - ns Eon(1) Turn-on switching energy 0.3 - mJ Eoff(2) Turn-off switching energy 0.96 - mJ Ets Total switching energy 1.26 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) 30 - ns tr Current rise time 17 - ns (di/dt)on Turn-on current slope 1435 - A/µs td(off) Turn-off-delay time 116 - ns tf Current fall time 194 - ns Eon(1) Turn-on switching energy 0.67 - mJ Eoff(2) Turn-off switching energy 1.36 - mJ Ets Total switching energy 2.03 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 µs VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 29: "Test circuit for inductive load switching") - 140 - ns Qrr Reverse recovery charge - 880 - nC Irrm Reverse recovery current - 17 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 650 - A/µs Err Reverse recovery energy - 115 - µJ trr Reverse recovery time IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 29: "Test circuit for inductive load switching") - 244 - ns Qrr Reverse recovery charge - 2743 - nC Irrm Reverse recovery current - 25 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 220 - A/µs Err Reverse recovery energy - 320 - µJ
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: V CE(sat) vs. collector current Ptot 150 100 -50 0 TC(°C) (W) 100 200 250 150 VGE ≥ 15V, TJ ≤ 175 °C GIPD100420150947FSR IC 0-50 0 TC(°C) (A) 100 150 VGE ≥ 15V, TJ ≤ 175 °C GIPD100420150959FSR IC 0 1 VCE(V) (A) 2 3 VGE=15V 11V 13V 100 GIPD100420151008FSR IC 0 1 VCE(V) (A) 2 3 VGE=15V 11V 13V 100 GIPD100420151025FSR VCE(sat) 1.8 1.4 -50 TJ(°C) (V) 1000 50 2.2 150 VGE= 15V IC= 60A IC= 30A IC= 15A 2.6 GIPD281020131418FSR VCE(sat)
0 IC(A)
(V) 6020 40 VGE= 15V TJ= -40°C 100 TJ= 25°C TJ= 175°C GIPD281020131116FSR
Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature 1 10 Ic[A] f [kHz] G Ω rectangular current shape, (dutycycle=0.5, VCC=400V,R =10 , VGE =0/15 V, TJ =175°C) Tc=80°C Tc=100 °C GIPD100420151129FSR IC 100
1 VCE(V)
(A) 1 µs 10 µs 1 ms Single pulse Tc= 25°C, TJ ≤ 175°C VGE= 15V 100 100 µs GIPD100420151137FSR IC 0 6 7 VGE(V) (A) 8 9 100 115 VCE= 5V TJ= 25 °C TJ= 175 °C GIPD100420151152FSR VF 1.5 0.5
00 IF(A)
(V) TJ= 175°C 40 60 80 TJ= 25°C TJ= -40°C 100 2.5 GIPD100420151209FSR VGE(th) 1.1 1.0 -50 TJ(°C) (norm) 0 50 100 150 IC= 500µA VCE= VGE 0.7 0.8 0.9 GIPD100420151232FSR V(BR)ces 1.1 1.05 -50 TJ(°C) (norm) 0 50 100 150 IC= 250µA 0.9 0.95 1.0 GIPD100420151240FSR
Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage C
10 VCE(V)
(pF) 0.1 1 10 Cies 100 1000 Coes Cres 100 f= 1MHz GIPD100420151249FSR VGE Qg(nC) (V) 0 20 IC= 30A IG= 1mA VCC= 520V GIPD100420151257FSR E (mJ) 0 10 20 30 40 Eon VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C Eoff Etot GIPD100420151322FSR E
0 RG(Ω)
(mJ) 0 20 40 60 80 Eoff VCC = 400 V, VGE = 15 V, IC = 30 A, TJ = 175 °C Eon Etot 100 GIPD100420151328FSR E
0 TJ(°C)
(mJ) 0 50 0.5 1.5 100 150 Eoff VCC= 400V, VGE= 15V, RG= 10Ω, IC= 30A Eon Etot GIPD100420151336FSR E VCE(V) (mJ) 150 0.5 1.5 Eoff TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 30A 2.5 250 350 450 Etot Eon GIPD100420151340FSR
Figure 20: Short-circuit time and current vs. VGE Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope tsc
10 VGE(V)12
(µs) VCC ≤ 400V, TJ ≤ 150°C tSC ISC ISC(A) 120 14 159 150 GIPD100420151351FSR t IC(A) (ns) 0 10 20 1 30 tf TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V 10 tr td(on) 40 50 100 td(off) GIPD100420151403FSR t RG(Ω) (ns) 0 20 40 tf TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V 100 td(on) td(off) tr GIPD100420151412FSR Irm di/dt(A/µs) (A) 200 600 1000 1400 IF = 30A, VCC = 400V VGE = 15V 1800 =175°C TJ GIPD100420151417FSR trr 180 di/dt(A/µs) (ns) 200 600 1000 220 1400 IF = 30A, VCC = 400V, VGE = 15V 1800 240 =175°C 260 200 TJ 280 GIPD100420151434FSR Qrr 2.5 di/dt(A/µs) (µC) 200 600 1000 2.8 1400 IF = 30A, VCC = 400V, VGE = 15V 1800 2.9 =175°C 2.7 TJ 2.6 GIPD100420151442FSR
STGP30M65DF2 Test circuits
3 Test circuits
Figure 29: Test circuit for inductive load switching Figure 30: Gate charge test circuit Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform A A C E G B RG+ G C 3.3 µF 1000 µF L=100 µH VCC E D.U.T B AM015 04v1 t AM01507v1 10% VRRM dv/dt di/dt IRRM IF trr ts tf Qrr IRRM
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220 type A package information
Figure 33: TO-220 type A package outline
Table 8: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
5 Revision history
Table 9: Document revision history Date Revision Changes 10-Feb-2015 1 First release. 13-Apr-2015 2 Document status promoted from preliminary to production data. Updated features in cover page. Updated Section 2: "Electrical characteristics" Added Section 2.1: "Electrical characteristics (curves)" 11-Apr-2017 3 Updated document title. Updated Table 4: "Static characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)". Updated Figure 13: "Normalized V(BR)CES vs. junction temperature ". Updated Section 4.1: "TO-220 type A package information". Minor text changes