G300HHCK12P2H

G300HHCK12P2 IRF | Alldatasheet

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www.irf.com 1 11/08/05 Features: /G110Rugged, Lightweight near Hermetic Package with Integrated Power Terminal Cap /G110Gen IV IGBT Technology /G110Soft Recovery Rectifiers /G110Ultra-Low Thermal Resistance /G110Zener Gate Protection /G110Very Low Conduction and Switching Loss /G110-55°C to +125°C Operating Temperature /G110Screening to meet the intent of MIL-PRF-38534 Class H /G110Short Circuit Capability /G1102.0 Ohms Series Gate Resistor /G110High Altitude Operation, 85,000 Feet Above Sea Level at Rated Voltage HiRelTM INT-A-Pak 2, PLASTIC G300HHCK12P2 HALF-BRIDGE IGBT MODULE The HiRel TM INT-A-Pak series are isolated near hermetic power modules which combine the latest IGBT and Soft Recovery Rectifier Technology. The module uses both high-speed and low Vce(sat) IGBT's packaged for ultra low thermal resistance junction to case. The G300HHCK12P2 power module consists of six IGBT's and six FRED's in a Phase- Leg or Half-Bridge configuration. Absolute Maximum Ratings @ Tj=25°C (unless otherwise specified) Parameter Symbol Value Units Collector-to-Emitter Voltage VCES 1200 Gate-to-Emitter Voltage VGE ±20 Continuous Collector Current @ Tc = 25°C 450 Continuous Collector Current @ Tc = 100°C 300 Isolation Voltage VISOL 2500 VRMS A V IC Product Summary Part Number VCE IC VCE(SAT) G300HHCK12P2 1200V 300A 2.2 PD-97014A HiRelTM INT-A-Pak 2

2 www.irf.com G300HHCK12P2 Electrical Characteristics @ Tj = 25°C (unless otherwise specified) Parameter Symbol Test Conditions Min. Typ. Max. Units Off Characteristics Collector Emitter Breakdown Voltage VCES VGE = 0V 1200 - - V Zero Gate Voltage Collector Current ICES VGE =0V, VCE = 1200V -- 1 . 0 m A Gate Emitter Leakage Current IGES VGE = ±15V, VCE = 0V -- 1 0 µA On Characteristics Gate Threshold Voltage VGE(TH) VCE = VGE, IC = 1.0mA 3.5 - 7.5 Collector Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 300A -2 . 2 2 . 7 Dynamic Characteristics Total Gate Charge Qg VCE = 600V, IC = 300A, VGE = 15V -2 3 0 0- nC Input Capacitance CIES -4 4- Output Capacitance COES VGE = 0V, VCE = 25V, f = 1.0MHz -3 . 0- n F Reverse Transfer Capacitance CRES -0 . 3- Switching Inductive Load Characteristics Turn-On Delay Time td(on) - 830 1000 Rise Time tr 300 400 Turn-On Losses Eon VCC = 600V, IC = 300A, VGE =15V -1 0 0- mJ Turn-Off Delay Time td(off) RG(on) = 20Ω, RG(off) =10Ω, L=100µH 1900 2200 Fall Time tf - 300 400 Turn-Off Losses Eoff -5 5-m J Diode Characteristics Forward Voltage VF IF = 300A -1 . 9 2 . 2 V Reverse Recovery Charge Qrr - 15 20 µC Peak Reverse Recovery Current Irr VR =600V, IC =300A, di/dt =-800A/µs -9 0- A Reverse Recovery Time trr - 500 800 ns ns ns V

www.irf.com 3 G300HHCK12P2 Thermal-Mechanical Specifications Parameter Symbol Min Max Units IGBT Thermal Resistance, Junction to Case, per Switch - 0.06 Diode Thermal Resistance, Junction to Case, per Switch - 0.10 Operating Junction Temperature Range TJ -55 150 Storage Temperature Range TSTG -55 125 Screw Torque - Mounting Screw Torque - Terminals Module Weight -2 7 0g RthJC T2 6 i n - l b s - °C/W Module Screening Test or Inspection Comments Method Condition Internal Visual 2017 Temperature Cycle 1010 B 10 Cycles, -55°C to +125°C Mechanical Shock 2002 B 1500G, 0.5ms, 5 Times (Y1 direction only) Burn-in 1015 A 160 Hrs @ +125°C Final Electrical Test Group A, -55°C, +25°C, +125°C External Visual 2009 MIL-STD-883 Electrical Characteristics @ Tj = 125°C (unless otherwise specified) Parameter Symbol Test Conditions Min. Typ. Max. Units Off Characteristics Collector Emitter Breakdown Voltage VCES VGE = 0V 1200 - - V Zero Gate Voltage Collector Current ICES VGE =0V, VCE = 1200V -- 3 . 0 m A Gate Emitter Leakage Current IGES VGE = ±15V, VCE = 0V -- 1 0 µA On Characteristics Gate Threshold Voltage VGE(TH) VCE = VGE, IC = 1.0mA 3.5 - 7.5 Collector Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 300A -2 . 2 2 . 7 Diode Characteristics Forward Voltage VF IF = 300A -1 . 9 2 . 2 V V

4 www.irf.com G300HHCK12P2 Schematic Fig 1: Maximum Collector Current Vs Case Temperature TC, Case Temperature (°C) /G77/G97/G120/G105/G109/G117/G109/G32/G68/G67/G32/G67/G111/G108/G108/G101/G99/G116/G111/G114/G32/G67/G117/G114/G114/G101/G110/G116/G32/G40/G65/G41 100 200 300 400 500 25 50 75 100 125 15 0 M a x i mu m D C Co l l e c t or C urr e nt ( A

www.irf.com 5 G300HHCK12P2 Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 3 - Test Waveforms for Circuit of Fig. 2, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qrr = trr tx id dt Fig. 2 - Test Circuit for Measurement of Eon, Eoff, trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 3 - Test Waveforms for Circuit of Fig. 2, Defining Eon, td(on), tr Fig. 4 - Test Waveforms for Circuit of Fig. 2, Defining Erec, trr, Qrr, Irr /G86/G99/G32/G73/G99/G32/G100/G116 /G86/G99/G101/G32/G73/G99/G32/G100/G116 /G32/G73/G99/G32/G100/G116 /G86/G99/G101/G32/G73/G99/G32/G100/G116

6 www.irf.com G300HHCK12P2 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Data and specifications subject to change without notice. 11/05 Part numbering Nomenclature Notes: 1) All dimensions are in inches 2) Unless otherwise specified, Tolerances .XX = ±0.01, .XXX = ±0.005 Case Outline and Dimensions - HiRelTM INT-A-Pak 2 G 300 HH C K 12 P2 H IGBT Module - Hirel Current Capability 300 = 300 Amps Generation IGBT / FWD Configuration C = GEN 5 (NPT) / GEN 3 Screening Level P = Unscreened, 25°C Electrical Test ( Not intended for Qualification) H = Screened per MIL-PRF-38534 Voltage 12 = 1200V Circuit Configuration HH = Half Bridge IGBT Speed / SC Capability K = Fast, SC Capable Package Type P2 = HiRelTM INT-A-Pak 2, 2.5" X 4.0" X 1.0"