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Document overview

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Technical content

Features

  • G2R™ T echnology - +20 V / -5 V Gate Drive
  • Superior Q x R Figure of Merit
  • Low Capacitances and Low Gate Charge
  • Normally-Off Stable Operation up to 175°C
  • Fast and Reliable Body Diode
  • High Avalanche and Short Circuit Ruggedness
  • Low Conduction Losses at High T emperatures Bare Chip D = Drain G = Gate S = Source KS = K elvin Source D S G KS RoHS REACH Advantages
  • Increased Power Density for Compact System
  • High Frequency Switching
  • Reduced Losses for Higher System Efficiency
  • Minimized Gate Ringing
  • Improved Thermal Capability
  • Superior Cost-Performance Index
  • Ease of Paralleing without Thermal Runaway
  • Simple to Drive

Applications

  • High Voltage Converters
  • Smart Grid and HVDC
  • Traction
  • Pulsed Power Absolute Maximum Ratings (At T = 25°C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Note Drain-Source Voltage V V = 0 V , I = 100 µA 6500 V Gate-Source Voltage (Dynamic) V -10 / +25 V Gate-Source Voltage (Static) V Recommended Operation -5 / +20 V Continuous Forward Current I A Note. 2 T = 100°C, V = -5 / +20 V 11 Power Dissipation P T = 25°C 315 W Note. 2 Operating and Storage Temperature T , T -55 to 175 °C Note 1: Pulse Width t Limited by T Note 2: Assuming Rth = 0.48°C/W(insulated base-plate package) DS DS(ON)(Typ.) D (T = 115°C)C G DS(ON) C DS(max) GS D GS(max) GS(op) D C GS C GS C GS D c j stg P j(max) JC(max) Sep. 20 Rev 1 www.genesicsemi.com/sic-mosfet/G2R300MT65-CAL/G2R300MT65-CAL.pdf Page 1 of 8 ENGINEERING SAMPLE

6500 V 300 mΩ SiC MOSFET

Electrical Characteristics (At T = 25°C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V , I = 100 µA 6500 V Zero Gate Voltage Drain Current I V = 6500 V , V = 0 V 1 µA Gate Source Leakage Current I V = 0 V , V = 25 V 100 nA V = 0 V , V = -10 V -100 Transconductance g V = 10 V , I = 5 A 2.7 S Fig. 4 V = 10 V , I = 5 A, T = 175°C 2.9 Drain-Source On-State Resistance R V = 20 V , I = 5 A 300 375 mΩ Fig. 5-8 V = 20 V , I = 5 A, T = 175°C 993 Input Capacitance C V = 800 V , V = 0 V f = 1 MHz, V = 25mV 4465 pF Fig. 10 Output Capacitance C 82 Reverse Transfer Capacitance C 13.9 C Stored Energy E 31 µJ Fig. 11 C Stored Charge Q 111 nC Internal Gate Resistance R f = 1 MHz, V = 25 mV 1.8 Ω Reverse Diode Characteristics Parameter Symbol Conditions Values Unit Note Min. Typ. Max. Diode Forward Voltage V V = -5 V , I = 5 A 4.2 V Fig. 12-13 V = -5 V , I = 5 A, T = 175°C 3.6 C DSS GS D DSS DS GS GSS DS GS DS GS GS(th) DS GS D DS GS D j fs DS D DS D j DS(ON) GS D GS D j iss DS GS AC oss rss oss oss oss oss G(int) AC SD GS SD GS SD j Sep. 20 Rev 1 www.genesicsemi.com/sic-mosfet/G2R300MT65-CAL/G2R300MT65-CAL.pdf Page 2 of 8 ENGINEERING SAMPLE

Figure 1: Output Characteristics (T = 25°C) I = f(V , V ); t = 250 µs Figure 2: Output Characteristics (T = 175°C) I = f(V , V ); t = 250 µs Figure 3: Output Characteristics (V = 20 V) I = f(V , T ); t = 250 µs Figure 4: Transfer Characteristics (V = 10 V) I = f(V , T ); t = 100 µs j D DS GS P j D DS GS P GS D DS j P DS D GS j P Sep. 20 Rev 1 www.genesicsemi.com/sic-mosfet/G2R300MT65-CAL/G2R300MT65-CAL.pdf Page 3 of 8 ENGINEERING SAMPLE

Figure 5: On-State Resistance v/s T emperature R = f(T , V ); t = 250 µs; I = 5 A Figure 6: On-State Resistance v/s Drain Current R = f(T ,I ); t = 250 µs; V = 20 V Figure 7: Normalized On-State Resistance v/s T emperature R = f(T ); t = 250 µs; I = 5 A; V = 20 V Figure 8: On-State Resistance v/s Gate Voltage R = f(T ,V ); t = 250 µs; I = 5 A DS(ON) j GS P D DS(ON) j D P GS DS(ON) j P D GS DS(ON) j GS P D Sep. 20 Rev 1 www.genesicsemi.com/sic-mosfet/G2R300MT65-CAL/G2R300MT65-CAL.pdf Page 4 of 8 ENGINEERING SAMPLE

Figure 9: Threshold Voltage Characteristics V = f(T ); V = V ; I = 6.0 mA Figure 10: Capacitance v/s Drain-Source Voltage f = 1 MHz; V = 25mV Figure 11: Output Capacitor Stored Energy E = f(V ) Figure 12: Body Diode Characteristics (T = 25°C) I = f(V , V ); t = 250 µs GS(th) j DS GS D AC oss DS j D DS GS P Sep. 20 Rev 1 www.genesicsemi.com/sic-mosfet/G2R300MT65-CAL/G2R300MT65-CAL.pdf Page 5 of 8 ENGINEERING SAMPLE

Figure 13: Body Diode Characteristics (T = 175°C) I = f(V , V ); t = 250 µs Figure 14: Third Quadrant Characteristics (T = 25°C) I = f(V , V ); t = 250 µs Figure 15: Third Quadrant Characteristics (T = 175°C) I = f(V , V ); t = 250 µs j D DS GS P j D DS GS P j D DS GS P Sep. 20 Rev 1 www.genesicsemi.com/sic-mosfet/G2R300MT65-CAL/G2R300MT65-CAL.pdf Page 6 of 8 ENGINEERING SAMPLE

This information is confidential, please contact sales@genesicsemi.com to learn more. Chip Dimensions This information is confidential, please contact sales@genesicsemi.com to learn more. NOTE 1. CONTROLLED DIMENSION IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. Sep. 20 Rev 1 www.genesicsemi.com/sic-mosfet/G2R300MT65-CAL/G2R300MT65-CAL.pdf Page 7 of 8 ENGINEERING SAMPLE

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. Disclaimer GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Related Links

  • SPICE Models: https:/ /www.genesicsemi.com/sic-mosfet/G2R300MT65-CAL/G2R300MT65-CAL_SPICE.zip
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  • CAD Models: https:/ /www.genesicsemi.com/sic-mosfet/G2R300MT65-CAL/G2R300MT65-CAL_3D.zip
  • Gate Driver Reference: https:/ /www.genesicsemi.com/technical-support
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  • Reliability: https:/ /www.genesicsemi.com/reliability
  • Compliance: https:/ /www.genesicsemi.com/compliance
  • Quality Manual: https:/ /www.genesicsemi.com/quality

Revision History

Date Revision Comments Supersedes Sep. 28, 2020 Rev 1 Initial Release www.genesicsemi.com/sic-mosfet/ Sep. 20 Rev 1 Published by GeneSiC Semiconductor, Inc. Copyright© 2020 GeneSiC Semiconductor Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA All Rights Reserved. Page 8 of 8 ENGINEERING SAMPLE