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Document overview

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Technical content

Features

  • G2R™ Technology with +20 V Gate Drive
  • Superior Q x R Figure of Merit
  • Superior Cost-Performance Index
  • Low Capacitances and Low Gate Charge
  • Fast and Reliable Body Diode
  • Low Losses at All Temperatures
  • Optimized Package with Separate Driver Source Pin Bare Chip D = Drain G = Gate S = Source KS = Kelvin Source D S G KS Advantages
  • Compatible with Commercial Gate Drivers
  • Increased Power Density for Compact System
  • High Frequency Switching
  • Improved Thermal Capability
  • Ease of Paralleing without Thermal Runaway

Applications

  • Solar String Inverters
  • EV- Fast Chargers
  • Pulsed Power
  • Switched Mode Power Supply
  • Energy Storage
  • Solid State Transformers
  • Solid State Circuit Breakers Absolute Maximum Ratings (At T = 25°C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Note Drain-Source Voltage V V = 0 V , I = 100 µA 3300 V Gate-Source Voltage (Dynamic) V -10 / +25 V Gate-Source Voltage (Static) V Recommended Operation -5 / +20 V Continuous Forward Current I A T = 100°C, V = -5 / +20 V 23 T = 135°C, V = -5 / +20 V 17 Pulsed Drain Current I t ≤ 3µs, D ≤ 1%, V = 20 V , Note 1 100 A Power Dissipation P T = 25°C 328 W Note 2 Non-Repetitive Avalanche Energy E L = 34.0 mH, I = 7.5 A 955 mJ Operating and Storage Temperature T , T -55 to 175 °C Note 1: Pulse Width t Limited by T Note 2: Assuming Rth = 0.46°C/W DS DS(ON)(T yp.) D (T = 100°C)C G DS(ON) C DS(max) GS D GS(max) GS(op) D C GS C GS C GS D(pulse) P GS D c AS AS j stg P j(max) JC(max) Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 1 of 12

3300 V 120 mΩ SiC MOSFET

Electrical Characteristics (At T = 25°C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V , I = 100 µA 3300 V Zero Gate Voltage Drain Current I V = 3300 V , V = 0 V 1 µA Gate Source Leakage Current I V = 0 V , V = 25 V 100 nA V = 0 V , V = -10 V -100 Transconductance g V = 10 V , I = 15 A 5.8 S Fig. 4 V = 10 V , I = 15 A, T = 175°C 6.3 Drain-Source On-State Resistance R V = 20 V , I = 15 A 120 156 mΩ Fig. 5-8 V = 20 V , I = 15 A, T = 175°C 246 Input Capacitance C V = 1000 V , V = 0 V f = 1 MHz, V = 25mV 3099 pF Fig. 11 Output Capacitance C 55 Reverse Transfer Capacitance C 5.2 C Stored Energy E 36 µJ Fig. 12 C Stored Charge Q 108 nC Gate-Source Charge Q V = 1000 V , V = -5 / +20 V I = 15 A Per IEC607478-4 nC Fig. 10 Gate-Drain Charge Q 43 Total Gate Charge Q 130 Internal Gate Resistance R f = 1 MHz, V = 25 mV 1.3 Ω Turn-On Switching Energy (Body Diode) E T = 25°C; V = -5/+20V; R = 10 Ω, I = 15 A; V = 1700 V 231 µJ Fig. 18 Turn-Off Switching Energy (Body Diode) E 137 Turn-On Delay Time t V = 1700 V , V = -5/+20V R = 10 Ω, I = 15 A Timing relative to V , Resistive load ns Fig. 20 Rise Time t 26 Turn-Off Delay Time t 32 Fall Time t 19 Reverse Diode Characteristics Parameter Symbol Conditions Values Unit Note Min. Typ. Max. Diode Forward Voltage V V = -5 V , I = 7 A 4.0 V Fig. 13-14 V = -5 V , I = 7 A, T = 175°C 3.4 Continuous Diode Forward Current I V = -5 V , T = 100°C 27 A Diode Pulse Current I V = -5 V , Note 1 108 A Reverse Recovery Time t V = -5 V , I = 15 A, V = 1700 V dif/dt = 500 A/µs, T = 25°C 72 ns Reverse Recovery Charge Q 340 nC Peak Reverse Recovery Current I 8 A Reverse Recovery Time t V = -5 V , I = 15 A, V = 1700 V dif/dt = 500 A/µs, T = 175°C 95 ns Reverse Recovery Charge Q 1305 nC Peak Reverse Recovery Current I 18 A *The chip technology was characterized up to 200 V/ns. The measured dV/dt was limited by measurement test setup and package. C DSS GS D DSS DS GS GSS DS GS DS GS GS(th) DS GS D DS GS D j fs DS D DS D j DS(ON) GS D GS D j iss DS GS AC oss rss oss oss oss oss gs DS GS Dgd g G(int) AC On j GS G(ext) D DD Off d(on) DD GS G(ext) D DS r d(off) f SD GS SD GS SD j S GS c S(pulse) GS rr GS SD R j rr rrm rr GS SD R j rr rrm Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 2 of 12

Figure 1: Output Characteristics (T = 25°C) I = f(V , V ); t = 250 µs Figure 2: Output Characteristics (T = 175°C) I = f(V , V ); t = 250 µs Figure 3: Output Characteristics (V = 20 V) I = f(V , T); t = 250 µs Figure 4: T ransfer Characteristics (V = 10 V) I = f(V , T); t = 100 µs j D DS GS P j D DS GS P GS D DS j P DS D GS j P Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 3 of 12

Figure 5: On-State Resistance v/s T emperature R = f(T, V ); t = 250 µs; I = 15 A Figure 6: On-State Resistance v/s Drain Current R = f(T,I ); t = 250 µs; V = 20 V Figure 7: Normalized On-State Resistance v/s T emperature R = f(T); t = 250 µs; I = 15 A; V = 20 V Figure 8: On-State Resistance v/s Gate Voltage R = f(T,V ); t = 250 µs; I = 15 A DS(ON) j GS P D DS(ON) j D P GS DS(ON) j P D GS DS(ON) j GS P D Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 4 of 12

Figure 9: Threshold Voltage Characteristics V = f(T); V = V ; I = 4.0 mA Figure 10: Gate Charge Characteristics I = 15 A; V = 1000 V; T = 25°C Figure 11: Capacitance v/s Drain-Source Voltage f = 1 MHz; V = 25mV Figure 12: Output Capacitor Stored Energy E = f(V ) GS(th) j DS GS D D DS c AC oss DS Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 5 of 12

Figure 13: Body Diode Characteristics (T = 25°C) I = f(V , V ); t = 250 µs Figure 14: Body Diode Characteristics (T = 175°C) I = f(V , V ); t = 250 µs Figure 15: Third Quadrant Characteristics (T = 25°C) I = f(V , V ); t = 250 µs Figure 16: Third Quadrant Characteristics (T = 175°C) I = f(V , V ); t = 250 µs j D DS GS P j D DS GS P j D DS GS P j D DS GS P Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 6 of 12

Figure 17: Resistive Switching Energy v/s Drain Current (V = 1500V) Figure 18: Resistive Switching Energy v/s Drain Current (V = 1700V) Figure 19: Resistive Switching Energy v/s R (V = 1700V) Figure 20: Switching Time v/s R (V = 1700V) DD j GS G(ext) DD j GS G(ext) G(ext) DD j GS DS G(ext) DD j GS DS Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 7 of 12

Figure 21: High Current IV I = f(V ); t ≤ 3 µs; V = 20 VD DS P GS Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 8 of 12

IG(cont) ID VDD RLoadD.U.T VDS Gate Charge Waveform (VGS)Gate Voltage QGS QGD (QG)Gate Charge Switching Time Circuit ID VGS D.U.T. VDS RLoad VDD Same device as the D.U.T. RG -5 V Switching Time Waveform 10% 90% 10% 10% 90% 90% td(on) VGS VDS tr ton td(off) tf toff Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 9 of 12

D.U.T. VDS RLoad VDD Same device as the D.U.T. RG -5 V Switching Energy Waveform VDS EON =∫I D x VDS x dt IDS EOFF =∫I D x VDS x dt Reverse Recovery Circuit VGS D.U.T. LLoad VDD Same device RG IF as the D.U.T. -5 V Reverse Recovery Waveform trr Irr 10% 90% IF

0 Level

dIrr/dt in 10% to 90% range Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 10 of 12

This information is confidential, please contact sales@genesicsemi.com to learn more. Chip Dimensions This information is confidential, please contact sales@genesicsemi.com to learn more. NOTE 1. CONTROLLED DIMENSION IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. Rev 21/Jan Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33-CAL/G2R120MT33-CAL.pdf Page 11 of 12

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. Disclaimer GeneSiC Semiconductor , Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Related Links

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Revision History

  • Rev 21/Jan: Updated with most recent test data
  • Supersedes: Rev 20/Nov www.genesicsemi.com/sic-mosfet/ Rev 21/Jan Published by GeneSiC Semiconductor, Inc. Copyright© 2021 GeneSiC Semiconductor Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA All Rights Reserved. Page 12 of 12