G2B800H120S1P LUGUANG | Alldatasheet

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VCES = 1200 V IC nom= 800 A/ ICRM =1600 A  Features a. Low Saturation Voltage b. Low switching losses c. Ultrasonic Welding of Power Terminals d. Standard Housing  Applications a. Motor Drives b. Wind Turbines c. High Power Converters  Circuit Topology http://www.lgesemi.com Revision:20220410-P1 mail:lge@lgesemi.com

Collector Emitter voltage TJ=25℃ VCES 1200 V Continuous DC collector current TC = 100℃, Tj max = 175℃ Ic nom 800 A Repetitive peak collector current tP = 1ms ICRM 1600 A Gate-emitter peak voltage VGES +/-20 V Electrical Characteristics(TJ = 25℃unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit Collector−Emitter Saturation Voltage VGE = 15 V, IC = 800 A TJ = 25℃ TJ = 125℃ TJ = 150℃ VCE(sat) 1.80 2.20 2.30 V Gate−Emitter Threshold Voltage VGE = VCE , IC = 23 mA VGE(th) 5.70 V Total Gate Charge VCE = 600 V, VGE = ±15 V Qg 21.5 uC Internal gate resistor Tj = 25℃ RGint 1.15 Ω Input Capacitance VCE = 25 V VGE = 0 V f = 100 kHz Cies 145 nF Reverse Transfer Capacitance Cres 2.30 Collector−Emitter Cut-off Current VGE = 0 V, VCE = 1200 V ICES 1.0 mA Gate Leakage Current VGE = 20 V, VCE = 0 V IGES 200 nA Turn−on Delay Time VCE = 600 V, IC = 800 A, VGE = ±15V, RG= 1 Ω, Inductive Load Turn-on(Tj = 150℃): di/dt = 6050 A/μs Turn-off(Tj = 150℃): dv/dt = 4270 V/μs TJ = 25℃ TJ = 125℃ TJ = 150℃ td(on) 235 240 245 ns Rise Time TJ = 25℃ TJ = 125℃ TJ = 150℃ tr 100 105 Turn−off Delay Time TJ = 25℃ TJ = 125℃ TJ = 150℃ td(off) 530 570 580 Fall Time TJ = 25℃ TJ = 125℃ TJ = 150℃ tf 200 320 325 Turn−on Switching Loss per Pulse TJ = 25℃ TJ = 125℃ TJ = 150℃ Eon 9.85 21.5 22.5 mJ Turn off Switching Loss per Pulse TJ = 25℃ TJ = 125℃ TJ = 150℃ Eoff 119 123 SC data VGE ≤15 V, VCC = 800 V tp ≤10μs, Tj = 150℃ ISC 4300 A Thermal Resistance − chip−to−case IGBT RthJC 0.037 ℃/W Temperature under switching Tj op -40 150 ℃ G2B800H120S1P 62mm C-Series IGBT Modulehttp://www.lgesemi.com Revision:20220410-P2 mail:lge@lgesemi.com

Diode, Inverter Maximum Rated Values Repetitive peak reverse voltage Tj = 25℃ VRRM 1200 V Continuous DC forward current IF 800 A Repetitive peak forward current tp= 1 ms IFRM 1600 A Electrical Characteristics(TJ = 25℃ unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit Diode Forward Voltage IF = 800 A, VGE = 0 V TJ = 25℃ TJ = 125℃ TJ = 150℃ VF 2.00 1.80 1.75 V Peak Reverse Recovery Current VR = 600 V, IF = 800 A, VGE = -15 V -diF/dt = 655 A/μs (Tj = 150℃) TJ = 25℃ TJ = 125℃ TJ = 150℃ IRM 435 680 755 A Reverse Recovery Charge TJ = 25℃ TJ = 125℃ TJ = 150℃ Qr 197 242 μC Reverse Recovery Energy TJ = 25℃ TJ = 125℃ TJ = 150℃ Erec 109 135 mJ Thermal Resistance− chip−to−case per diode RthJC 0.065 ℃/W Temperature under switching Tj op -40 150 ℃ G2B800H120S1P 62mm C-Series IGBT Modulehttp://www.lgesemi.com Revision:20220410-P3 mail:lge@lgesemi.com

Parameter Test Conditions Symbol Typ. Unit Isolation test voltage RMS, f = 50 Hz, t = 1 min VISOL 4.0 kV Material of module baseplate Cu Internal Isolation Basic insulation (class 1, IEC 61140) Al2O3 Creepage distance Terminal to heatsink Terminal to terminal dCreep 29.0 23.0 mm Clearance Terminal to heatsink Terminal to terminal dClear 23.0 11.0 mm Comparative tracking index CTI > 400 Characteristic Values Parameter Symbol Min Typ Max Unit Stray inductance module LsCE 20 nH Module lead resistance TC = 25℃, per switch RCC’+EE’ 0.69 mΩ Storage temperature Tstg -40 125 ℃ Mounting torque for module Screw M6 M 3 6 Nm Terminal connection torque Screw M6 M 2.5 5.0 Nm Weight G 315 g G2B800H120S1P 62mm C-Series IGBT Modulehttp://www.lgesemi.com Revision:20220410-P4 mail:lge@lgesemi.com

output characteristic IGBT, Inverter (typical) output characteristic IGBT, Inverter (typical) switching losses IGBT, Inverter (typical) switching losses IGBT, Inverter (typical) transient thermal impedance IGBT, Inverter Reverse bias safe operating area IGBT, Inverter(RBSOA) G2B800H120S1P 62mm C-Series IGBT Modulehttp://www.lgesemi.com Revision:20220410-P5 mail:lge@lgesemi.com

forward characteristic of Diode, Inverter(typical) switching losses Diode, Inverter(typical) switching losses Diode, Inverter(typical) transient thermal impedance Diode, Inverter G2B800H120S1P 62mm C-Series IGBT Modulehttp://www.lgesemi.com Revision:20220410-P6 mail:lge@lgesemi.com

62mm C-Series IGBT Modulehttp://www.lgesemi.com Revision:20220410-P7 mail:lge@lgesemi.com