G25H1203

IGW25N120H3_14 INFINEON | Alldatasheet

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HighspeedIGBTinTrenchandFieldstoptechnology recommendedincombinationwithSiCDiodeIDH15S120 IGW25N120H3 1200Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-02-27 HighspeedIGBTinTrenchandFieldstoptechnology recommendedincombinationwithSiCDiodeIDH15S120 Features: TRENCHSTOPTMtechnologyoffering

• bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable
• verylowVCEsat
• lowEMI
• maximumjunctiontemperature175°C
• qualifiedaccordingtoJEDECfortargetapplications
• Pb-freeleadplating;RoHScompliant
• completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
• solarinverters
• uninterruptiblepowersupplies
• weldingconverters
• converterswithhighswitchingfrequency Packagepindefinition:
• Pin1-gate
• Pin2&backside-collector
• Pin3-emitter G C E 1 2 3 KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IGW25N120H3 1200V 25A 2.05V 175°C G25H1203 PG-TO247-3

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-02-27 TableofContents

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-02-27 Maximumratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 50.0 25.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 100.0 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 100.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤600V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=175°C tSC µs PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 326.0 156.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction - case Rth(j-c) 0.46 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=25.0A Tvj=25°C Tvj=125°C Tvj=175°C 2.05 2.50 2.70 2.40 V Gate-emitter threshold voltage VGE(th) IC=0.85mA,VCE=VGE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C 250.0 2500.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA Transconductance gfs VCE=20V,IC=25.0A - 13.0 - S

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-02-27 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 1430 - Output capacitance Coes - 95 - Reverse transfer capacitance Cres - 75 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=960V,IC=25.0A, VGE=15V - 115.0 - nC Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s IC(SC) VGE=15.0V,VCC≤600V, tSC≤10µs Tvj=175°C - A SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 27 - ns Rise time tr - 41 - ns Turn-off delay time td(off) - 277 - ns Fall time tf - 17 - ns Turn-on energy Eon - 1.80 - mJ Turn-off energy Eoff - 0.85 - mJ Total switching energy Ets - 2.65 - mJ Tvj=25°C, VCC=600V,IC=25.0A, VGE=0.0/15.0V, rG=23.0Ω ,Lσ=80nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW25N120H3) reverse recovery. Turn-on energy Eon - 0.08 - mJ Turn-off energy Eoff - 0.27 - mJ Total switching energy Ets - 0.35 - mJ Tvj=25°C, VCC=800V,IC=10.0A, VGE=0.0/15.0V, rG=3.0Ω ,Lσ=80nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IDH15S120) reverse recovery.

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-02-27 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) - 26 - ns Rise time tr - 35 - ns Turn-off delay time td(off) - 347 - ns Fall time tf - 50 - ns Turn-on energy Eon - 2.60 - mJ Turn-off energy Eoff - 1.70 - mJ Total switching energy Ets - 4.30 - mJ Tvj=175°C, VCC=600V,IC=25.0A, VGE=0.0/15.0V, rG=23.0Ω ,Lσ=80nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW25N120H3) reverse recovery. Turn-on energy Eon - 0.10 - mJ Turn-off energy Eoff - 0.62 - mJ Total switching energy Ets - 0.72 - mJ Tvj=175°C, VCC=800V,IC=10.0A, VGE=0.0/15.0V, rG=3.0Ω ,Lσ=80nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IDH15S120) reverse recovery.

Figure 21. IGBTtransientthermalimpedance

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-02-27 PG-TO247-3

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-02-27 t a a b b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% IC t 90% VGE vGE(t) t t iC(t) vCE(t) 90% VGE vGE(t) t t iC(t) vCE(t) tt1 t4 2% IC 10% VGE 2% VCE t2 t3

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-02-27 RevisionHistory IGW25N120H3 Revision:2014-02-27,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2011-12-12 Preliminary data sheet 2.1 2014-02-27 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered.