SGF23N60UFD FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • High Speed Switching
  • Low Saturation Voltage : V CE(sat) = 2.1 V @ IC = 12A
  • High Input Impedance
  • CO-PAK, IGBT with FRD : t rr = 42ns (typ.) Absolute Maximum Ratings TC = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Description SGF23N60UFD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ T C = 25°C2 3 A Collector Current @ T C = 100°C1 2 A ICM (1) Pulsed Collector Current 92 A IF Diode Continuous Forward Current @ T C = 100°C1 2 A IFM Diode Maximum Forward Current 92 A PD Maximum Power Dissipation @ T C = 25°C7 5 W Maximum Power Dissipation @ T C = 100°C3 0 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 1.6 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 3.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls G C E TO-3PF G C E G C ETO-3PF

©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A SGF23N60UFD Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Electrical Characteristics of DIODE TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage V GE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current V CE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current V GE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage I C = 12mA, VCE = VGE 3.5 4.5 6.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 12A, VGE = 15V -- 2.1 2.6 V IC = 23A, VGE = 15V -- 2.6 -- V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 720 -- pF Coes Output Capacitance -- 100 -- pF Cres Reverse Transfer Capacitance -- 25 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 12A, RG = 23Ω , VGE = 15V, Inductive Load, TC = 25°C -- 17 -- ns tr Rise Time -- 27 -- ns td(off) Turn-Off Delay Time -- 60 130 ns tf Fall Time -- 70 150 ns Eon Turn-On Switching Loss -- 115 -- uJ Eoff Turn-Off Switching Loss -- 135 -- uJ Ets Total Switching Loss -- 250 400 uJ td(on) Turn-On Delay Time VCC = 300 V, IC = 12A, RG = 23Ω , VGE = 15V, Inductive Load, TC = 125°C -- 23 -- ns tr Rise Time -- 32 -- ns td(off) Turn-Off Delay Time -- 100 200 ns tf Fall Time -- 220 250 ns Eon Turn-On Switching Loss -- 205 -- uJ Eoff Turn-Off Switching Loss -- 320 -- uJ Ets Total Switching Loss -- 525 800 uJ Qg Total Gate Charge VCE = 300 V, IC = 12A, VGE = 15V -- 49 80 nC Qge Gate-Emitter Charge -- 11 17 nC Qgc Gate-Collector Charge -- 14 22 nC Le Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage I F = 12A trr Diode Reverse Recovery Time IF = 12A, di/dt = 200A/us TC = 25°C -- 42 60 nsTC = 100°C -- 80 -- Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C -- 80 180 nCTC = 100°C -- 220 --

©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A SGF23N60UFD 048 1 2 1 6 2 0 Common Emitter TC = 25℃ 24A 12A IC = 6A Collector - Emitter Voltage, V CE [V] Gate - Emitter Voltage, V GE [V] 0 4 8 12 16 20 Common Emitter TC = 125℃ 24A 12A IC = 6A Collector - Emitter Voltage, V CE [V] Gate - Emitter Voltage, V GE [V] 03 0 6 0 9 0 1 2 0 1 5 0 24A 12A IC = 6A Common Emitter VGE = 15V Collector - Emitter Voltage, V CE [V] Case Temperature, T C [℃] 0.5 1 10 Common Emitter VGE = 15V TC = 25 ℃ TC = 125℃ Collector Current, I C [A] Collector - Emitter Voltage, V CE [V] 02468 100 20V 12V 15V VGE = 10V Common Emitter TC = 25℃ Collector Current, I C [A] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. V GE 0.1 1 10 100 1000 VCC = 300V Load Current : peak of square wave Duty cycle : 50% TC = 100℃ Power Dissipation = 16W Frequency [KHz] Load Current [A]

©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A SGF23N60UFD 4 8 12 16 20 24 100 1000 Toff Tf Toff Tf Common Emitter VCC = 300V, V GE = ± 15V RG = 23Ω TC = 25 ℃ TC = 125℃ Switching Time [ns] Collector Current, I C [A] 4 8 12 16 20 24 100 200 Ton Tr Common Emitter VCC = 300V, V GE = ± 15V RG = 23Ω TC = 25 ℃ TC = 125 ℃ Switching Time [ns] Collector Current, I C [A] 11 0 1 0 0 2 0 0 100 1000 Eon Eoff Eon Eoff Common Emitter VCC = 300V, V GE = ± 15V IC = 12A TC = 25 ℃ TC = 125℃ Switching Loss [uJ] Gate Resistance, R G [Ω ] 11 0 1 0 0 2 0 0 100 1000 Toff Tf Toff Tf Common Emitter VCC = 300V, V GE = ± 15V IC = 12A TC = 25 ℃ TC = 125 ℃ Switching Time [ns] Gate Resistance, R G [Ω ] 11 0 1 0 0 2 0 0 100 200 Common Emitter VCC = 300V, V GE = ± 15V IC = 12A TC = 25 ℃ TC = 125℃ Ton Tr Switching Time [ns] Gate Resistance, R G [Ω ] 11 0 3 0 200 400 600 800 1000 1200 Cres Coes Cies Common Emitter VGE = 0V, f = 1MHz TC = 25℃ Capacitance [pF] Collector - Emitter Voltage, V CE [V] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Fig 11. Turn-On Characteristics vs. Collector Current Fig 12. Turn-Off Characteristics vs. Collector Current

©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A SGF23N60UFD 1E-5 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse Thermal Response [Zthjc] Rectangular Pulse Duration [sec] 0.3 1 10 100 1000 0.1 100 300 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 50us 100us DC Operation IC MAX. (Continuous) IC MAX. (Pulsed) Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 1 10 100 1000 0.1 100 200 Safe Operating Area VGE = 20V, T C = 100℃ Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 4 8 12 16 20 24 100 1000 Eoff Eon Eon Eoff Common Emitter VCC = 300V, V GE = ± 15V RG = 23Ω TC = 25 ℃ TC = 125 ℃ Switching Loss [uJ] Collector Current, I C [A] 0 1 02 03 04 05 0 300 V 200 V VCC = 100 V Common Emitter RL = 25 Ω TC = 25℃ Gate - Emitter Voltage, V GE [ V ] Gate Charge, Q g [ nC ] Fig 14. Gate Charge Characteristics Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 13. Switching Loss vs. Collector Current Pdm Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC Fig 17. Transient Thermal Impedance of IGBT

©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A SGF23N60UFD 100 1000 100 VR = 200V IF = 12A TC = 25 ℃ TC = 100 ℃ Reverce Recovery Time, t rr [ns] di/dt [A/us] 100 1000 100 200 300 400 500 600 VR = 200V IF = 12A TC = 25 ℃ TC = 100 ℃ Stored Recovery Charge, Q rr [nC] di/dt [A/us] 100 1000 100 VR = 200V IF = 12A TC = 25 ℃ TC = 100 ℃ Reverse Recovery Current, I rr [A] di/dt [A/us] 100 0123 TC = 25 ℃ TC = 100 ℃ Forward Voltage Drop, V FM [V] Forward Current, I F [A] Fig 19. Reverse Recovery CurrentFig 18. Forward Characteristics Fig 20. Stored Charge Fig 21. Reverse Recovery Time

©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A SGF23N60UFD Package Dimension 26.50 ±0.20 4.50 ±0.20 10° 16.50 ±0.20 22.00 ±0.20 23.00 ±0.20 1.50 ±0.20 14.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 0.85 ±0.03 2.00 ±0.20 5.50 ±0.20 3.00 ±0.20 (1.50) 3.30 ±0.20 2.00 ±0.20 4.00 ±0.20 2.50 ±0.20 14.80 ±0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 0.75+0.20 –0.10 0.90+0.20 –0.10 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] TO-3PF (FS PKG CODE AG) Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET VCX™ STAR*POWER is used under license