HGTG20N60B3D FAIRCHILD | Alldatasheet
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Technical content
Features
- 40A, 600V at TC = 25oC Short Circuit Rated Low Conduction Loss Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247
Ordering Information
HGTG20N60B3D TO-247 G20N60B3D NOTE: When ordering, use the entire part number. C E G COLLECTOR (BOTTOM SIDE METAL) E C G FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 Data Sheet December 2001
©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60B3D UNITS CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE = 360V, TC = 125oC, RG = 25Ω. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Collector to Emitter Leakage Current I CES VCE = BVCES TC = 25oC - - 250 µA TC = 150oC- - 2 . 0 m A Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110 , VGE = 15V TC = 25oC- 1 . 8 2 . 0 V TC = 150oC- 2 . 1 2 . 5 V Gate to Emitter Threshold Voltage V GE(TH) IC = 250µA, VCE = VGE 3.0 5.0 6.0 V Gate to Emitter Leakage Current I GES VGE = ±20V - - ±100 nA Switching SOA SSOA T C = 150oC VGE = 15V, R G = 10Ω, L = 45µH VCE = 480V 100 - - A VCE = 600V 30 - - A Gate to Emitter Plateau Voltage V GEP IC = IC110 , VCE = 0.5 BVCES -8 . 0- V On-State Gate Charge Q G(ON) IC = IC110 , VCE = 0.5 BVCES VGE = 15V - 80 105 nC VGE = 20V - 105 135 nC Current Turn-On Delay Time t d(ON)I TC = 150oC, ICE = IC110 VCE = 0.8 BVCES, VGE = 15V R G = 10Ω, L = 100µH -2 5-n s Current Rise Time t rI -2 0-n s Current Turn-Off Delay Time t d(OFF)I - 220 275 ns Current Fall Time t fI - 140 175 ns Turn-On Energy E ON - 475 - µJ Turn-Off Energy (Note 3) E OFF - 1050 - µJ Diode Forward Voltage V EC IEC = 20A - 1.5 1.9 V Diode Reverse Recovery Time t rr IEC = 20A, dIEC /dt = 100A/µs- - 5 5 n s IEC = 1A, dIEC /dt = 100A/µs- - 4 5 n s Thermal Resistance R θJC IGBT - - 0.76 oC/W Diode - - 1.2 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. HGTG20N60B3D
- Prior to assembly into a circuit, all leads should be kept
as “ECCOSORBD LD26” or equivalent.
- When devices are removed by hand from their carriers, the
means - for example, with a metallic wristband.
- Tips of soldering irons should be grounded.
- Devices should never be inserted into or removed from
- Gate Voltage Rating - Never exceed the gate-voltage
permanent damage to the oxide layer in the gate region.
- Gate Termination - The gates of these devices are
on the input capacitor due to leakage currents or pickup.
- Gate Protection - These devices do not have an internal
protection is required an external zener is recommended. by the maximum rated junction temperature. MAX1 is defined by fMAX1 = 0.05/(td(OFF)I td(ON)I). d(OFF)I and td(ON)I are defined in Figure 19. allowable dissipation (PD ) is defined by PD =( TJM -TC )/RθJC. collector current equals zero (ICE = 0). FIGURE 18. INDUCTIVE SWITCHING TEST CI RCUIT FIGURE 19. SWITCHING TEST WAVEFORMS
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ Rev. H4 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET STAR*POWER is used under license VCX™