HGTG20N120CND FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • 63A, 1200V, T C = 25 o C
  • 1200V Switching SOA Capability J = 150 o C
  • Short Circuit Rating
  • Low Conduction Loss Packaging JEDEC STYLE TO-247 Symbol

Ordering Information

HGTG20N120CND TO-247 20N120CND NOTE: When ordering, use the entire part number. G C E E G FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 Data Sheet December 2001

©2001 Fairchild Semiconductor Corporation HGTG20N120CND Rev. B Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified HGTG20N120CND UNITS CES 1200 V Collector Current Continuous At T C = 25 o C25 63 A At T C = 110 o C110 30 A CM 160 A GES 20 V GEM 30 V Switching Safe Operating Area at T J = 150 o Power Dissipation Total at T C = 25 o D 390 W Power Dissipation Derating T C > 25 o o C J , T STG -55 to 150 o C L 260 o C Short Circuit Withstand Time (Note 2) at V GE SC µ s Short Circuit Withstand Time (Note 2) at V GE SC µ s CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. V CE(PK) = 960V, T J = 125 o C, R G = 3 Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV CES I C = 250 µ A, V GE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BV ECS I C = 10mA, V GE = 0V 15 - - V Collector to Emitter Leakage Current I CES V CE = 1200V T C = 25 o C - - 250 µ A T C = 125 o C - 450 - µ A T C = 150 o C- - 6 m A Collector to Emitter Saturation Voltage V CE(SAT) I C = 20A, V GE = 15V T C = 25 o C - 2.1 2.4 V T C = 150 o C - 2.9 3.5 V Gate to Emitter Threshold Voltage V GE(TH) I C = 150 µ A, V CE = V GE 6.0 6.9 - V Gate to Emitter Leakage Current I GES V GE 20V - - 250 nA Switching SOA SSOA T J = 150 o C, R G = 3 V GE = 15V, L = 200 µ H, V CE(PK) = 1200V 100 - - A Gate to Emitter Plateau Voltage V GEP I C = 20A, V CE = 600V - 10.2 - V On-State Gate Charge Q G(ON) I C = 20A, V CE = 600V V GE = 15V - 155 200 nC V GE = 20V - 200 250 nC Current Turn-On Delay Time t d(ON)I IGBT and Diode at T J = 25 o C I CE = 20A V CE = 960V V GE = 15V R G = 3 Ω L = 1mH Test Circuit (Figure 20) -2 3 2 8n s Current Rise Time t rI -1 7 2 2n s Current Turn-Off Delay Time t d(OFF)I - 200 240 ns Current Fall Time t fI - 220 270 ns Turn-On Energy E ON - 2.0 2.5 mJ Turn-Off Energy (Note 3) E OFF - 2.8 3.3 mJ HGTG20N120CND

  1. Prior to assembly into a circuit, all leads should be kept

as “ECCOSORBD™ LD26” or equivalent.

  1. When devices are removed by hand from their carriers,

means - for example, with a metallic wristband.

  1. Tips of soldering irons should be grounded.
  2. Devices should never be inserted into or removed from
  3. Gate Voltage Rating - Never exceed the gate-voltage

permanent damage to the oxide layer in the gate region.

  1. Gate Termination - The gates of these devices are
  2. Gate Protection - These devices do not have an internal

protection is required an external Zener is recommended. MAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). d(OFF)I and td(ON)I are defined in Figure 21. allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. OFF; i.e., the collector current equals zero (ICE = 0). FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ Rev. H4 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET STAR*POWER is used under license VCX™