G1A YEASHIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

FEATURES

  • For surface mounted applications
  • Low profile package
  • Built-in strain relief
  • Easy pick and place
  • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing
  • Low Forward Drop
  • High temperature soldering : 260°C /10 seconds at terminals MECHANICAL DATA Case: SMF molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Standard packaging: 12mm tape (EIA-481) GPP SUR FACE MOUNT RECTIFIER VOLTAGE- 50 to 1000 Volts CURRENT - 1.0 Amperes MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current, at T L=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A Maximum DC Reverse Curren A =25°C at Rated DC Blocking Voltage A =125°C Maximum Reverse Recovery Time(Note 1) T J=25°C Typical Junction Capacitance (Note 2) Maximum Thermal Resistance(Note 3) Operating and Storage Temperature Range 1.0 1.1 5.0 2.5 -55 to +150 V V V A A V µA µs pF UNIT °C/ W 1. Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I rr =0.25A 2. Measured at 1 MHz and applied V r = 4.0 volts. 3. 8.0 mm ( .013mm thick ) land areas. 100 µA ° C SMF Unit: inch ( mm ) V RRM V RMS V DC I(AV) I FSM V F I R T RR C J R JA T T STG DATA SHEET G1A 100 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 G1B G1D G1G G1J G1K G1M SEMICONDUCTOR http://www.yeashin.com 1 REV.03 20150105 G1A G1M T T NOTES: ө THRU SY MBOLS 0.035(0.90)TYPICAL 0.189(4.80) 0.173(4.40) 0.141(3.60) 0.110(2.80) 0.052(1.30) 0.056(1.43) 0.126(3.20) 0.095(2.40) 0.043(1.10) 0.054(1.38) 0.87MAX (2.20MAX) 0.82MIN(1.27MIN) 0.050MIN (1.27MIN) 0.201REF (5.1REF)

3.0 2.0 1.0 0 5 15 70 100 4.0 2.0 1.0 0.4 0.2 0.1 1 2 6 10 20 40 60 100 0.4 0.5 1.5 2.5 0.1 1.0 100 1000 100 0.1 1.0 100 100 0.01 100 1.0 0.01 20 40 60 80 100 120 140 0.001 0.1 Fig.1-FORWARD CURRENT DERATING CURVE Fig.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Fig.4-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT Fig.3-TYPICAL REVERSE CHARACTERISTICS Fig.5-TRANSIENT THERMAL IMPEDANCE Fig.6-TYPICAL JUNCTION CAPACITANCE LEAD TEMPERATURE, C O INSTANTANEOUS FORWARD VOLTAGE, VOLTS , T N E R R U C D R A W R O F S U O E N A T N A T S N I S E R E P M A , T N E R R U C D R A W R O F E G A R E V A S E R E P M A , T N E R R U C E S R E V E R S U O E N A T N A T S N I S E R E P M A O R C I M T N E R R U C E G R U S D R A W R O F K A E P S E R E P M A , F p , E C N A T I C A P A C ) W / C ( E C N A D E P M I L A M R E H T O NUMBER OF CYCLES AT 60Hz PERCENT OF PEAK REVERSE VOLTAGE, % HEATING TIME(SEC) Units Mounted On 20in2 (5.4mm)+0.5mil inches(0.013mm) Thick copper Land Areas SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD COPPER PAD AREAS T = 25 C f = 1.0mHz Vsig = 50mVp-p J O 8.3ms Single Half Sine-Wave JEDEC Method T = 75 C J O T = 100 C J O T = 25 C J O REVERSE VOLTAGE, VOLTS http://www.yeashin.com 2 REV.03 20150105 G1A G1MTHRU RATING AND CHARACTERISTIC CURVES