G160N60 | DigiCamel IC Datasheet

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SGL160N60UFD FAIRCHILD | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 8

Technical content

Features

High speed switching
Low saturation voltage : V CE(sat) = 2.1 V @ IC = 80A
High input impedance
CO-PAK, IGBT with FRD: t rr = 75nS (typ.) Absolute Maximum Ratings TC = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Description SGL160N60UFD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ T C = 25°C 160 A Collector Current @ T C = 100°C8 0 A ICM (1) Pulsed Collector Current 300 A IF Diode Continuous Forward Current @ T C =100°C2 5 A IFM Diode Maximum Forward Current 280 A PD M a x i m u m P o w e r D i s s i p a t i o n @ TC = 25°C 250 W Maximum Power Dissipation @ T C = 100°C 100 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.5 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W

Applications

AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies. TO-264 G C E G C E G C E

SGL160N60UFD Rev. B1 SGL160N60UFD ©2002 Fairchild Semiconductor Corporation Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Electrical Characteristics of DIODE TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage V GE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current V CE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current V GE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage I C = 80mA, VCE = VGE 3.5 4.5 6.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 80A, VGE = 15V -- 2.1 2.6 V IC = 160A, VGE = 15V -- 2.6 -- V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 5000 -- pF Coes Output Capacitance -- 600 -- pF Cres Reverse Transfer Capacitance -- 200 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 80A, RG = 3.9Ω , VGE=15V Inductive Load, TC = 25°C -- 40 -- ns tr Rise Time -- 101 -- ns td(off) Turn-Off Delay Time -- 90 130 ns tf Fall Time -- 75 150 ns Eon Turn-On Switching Loss -- 2500 -- uJ Eoff Turn-Off Switching Loss -- 1760 -- uJ Ets Total Switching Loss -- 4260 5000 uJ td(on) Turn-On Delay Time VCC = 300 V, IC = 80A, RG = 3.9Ω , VGE = 15V Inductive Load, TC = 125°C -- 45 -- ns tr Rise Time -- 105 -- ns td(off) Turn-Off Delay Time -- 140 200 ns tf Fall Time -- 122 250 ns Eon Turn-On Switching Loss -- 2785 -- uJ Eoff Turn-Off Switching Loss -- 3100 -- uJ Ets Total Switching Loss -- 5885 -- uJ Qg Total Gate Charge VCE = 300 V, IC = 80A, VGE = 15V -- 345 520 nC Qge Gate-Emitter Charge -- 60 100 nC Qgc Gate-Collector Charge -- 95 150 nC Le Internal Emitter Inductance Measured 5mm from PKG -- 18 -- nH Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage I F = 25A trr Diode Reverse Recovery Time IF = 25A, di/ dt = 200 A/us TC = 25°C -- 50 95 nsTC = 100°C -- 105 -- Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C -- 112 375 nCTC = 100°C -- 420 --

SGL160N60UFD Rev. B1 SGL160N60UFD ©2002 Fairchild Semiconductor Corporation 0 4 8 1 21 62 0 Common Emitter TC = 25℃ 160A 80A IC = 40A Collector - Emitter Voltage, V CE [V] Gate - Emitter Voltage, V GE [V] 03 0 6 0 9 0 1 2 0 1 5 0 160A 80A IC = 40A Common Emitter VGE = 15V Collector - Emitter Voltage, V CE [V] Case Temperature, T C [℃] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency Fig 7. Saturation Voltage vs. V GE 02468 100 200 300 400 500 20V 12V 15V VGE = 10V Common Emitter TC = 25℃ Collector Current, I C [A] Collector - Emitter Voltage, V CE [V] 0.5 1 10 120 160 200 240 Common Emitter VGE = 15V TC = 25 ℃ TC = 125℃ Collector Current, I C [A] Collector - Emitter Voltage, V CE [V] 100 120 0.1 1 10 100 1000 Duty cycle : 50% TC = 100 ℃ Power Dissipation = 130W VCC = 300V Load Current : peak of square wave Frequency [KHz] Load Current [A] 0 4 8 12 16 20 Common Emitter TC = 125 ℃ 160A 80A IC = 40A Collector - Emitter Voltage, V CE [V] Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE

SGL160N60UFD Rev. B1 SGL160N60UFD ©2002 Fairchild Semiconductor Corporation 20 40 60 80 100 120 140 160 100 1000 Toff Tf Toff Tf Common Emitter VCC = 300V, V GE = ± 15V RG = 3.9Ω TC = 25 ℃ TC = 125℃ Switching Time [ns] Collector Current, I C [A] 20 40 60 80 100 120 140 160 100 500 Ton Tr Common Emitter VCC = 300V, V GE = ± 15V RG = 3.9Ω TC = 25 ℃ TC = 125 ℃ Switching Time [ns] Collector Current, I C [A] 11 0 8 0 100 1000 2000 Toff Tf Tf Common Emitter VCC = 300V, V GE = ± 15V IC = 80A TC = 25 ℃ TC = 125 ℃ Switching Time [ns] Gate Resistance, R G [Ω ] 11 0 8 0 100 1000 Common Emitter VCC = 300V, VGE = ± 15V IC = 80A TC = 25℃ TC = 125℃ Ton Tr Switching Time [ns] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Fig 11. Turn-On Characteristics vs. Collector Current Fig 12. Turn-Off Characteristics vs. Collector Current 11 0 3 0 1000 2000 3000 4000 5000 6000 7000 8000 Cres Coes Cies Common Emitter VGE = 0V, f = 1MHz TC = 25℃ Capacitance [pF] Collector - Emitter Voltage, V CE [V] 11 0 8 0 1000 10000 Eoff Eon Eoff Common Emitter VCC = 300V, V GE = ± 15V IC = 80A TC = 25 ℃ TC = 125℃ Switching Loss [uJ] Gate Resistance, R G [Ω ]

SGL160N60UFD Rev. B1 SGL160N60UFD ©2002 Fairchild Semiconductor Corporation Fig 14. Gate Charge Characteristics Fig 15. SOA Characteristic Fig 16. Turn-Off SOA Characteristics Fig 13. Switching Loss vs. Collector Current 0 50 100 150 200 250 300 350 300 V

200 VVCC = 100 V

RL = 37.5 Ω TC = 25℃ Gate - Emitter Voltage, V GE [ V ] Gate Charge, Q g [ nC ] 0.3 1 10 100 1000 0.1 100 1000 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 50us 100us DC Operation IC MAX. (Continuous) IC MAX. (Pulsed) Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 1 10 100 1000 100 500 Safe Operating Area VGE=20V, T C=100 o C Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 1E-3 0.01 0.1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse Thermal Response [Zthjc] Rectangular Pulse Duration [sec] Pdm Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 20 40 60 80 100 120 140 160 100 1000 10000 20000 Eon Eoff Common Emitter VCC = 300V, V GE = ± 15V RG = 3.9 Ω TC = 25 ℃ TC = 125 ℃ Switching Loss [uJ] Collector Current, I C [A] Fig 17. Transient Thermal Impedance of IGBT

SGL160N60UFD Rev. B1 SGL160N60UFD ©2002 Fairchild Semiconductor Corporation 100 1000 100 120 VR = 200V IF = 25A TC = 25 ℃ TC = 100℃ Reverce Recovery Time, t rr [ns] di/dt [A/us] Fig 19. Reverse Recovery Current Fig 18. Forward Characteristics Fig 20. Stored Charge Fig 21. Reverse Recovery Time 100 0123 TC = 25 ℃ TC = 100 ℃ Forward Voltage Drop, V F [V] Forward Current, I F [A] 100 1000 100 VR = 200V IF = 25A TC = 25 ℃ TC = 100 ℃ Reverse Recovery Current, I rr [A] di/dt [A/us] 100 1000 200 400 600 800 1000 VR = 200V IF = 25A TC = 25 ℃ TC = 100 ℃ Stored Recovery Charge, Q rr [nC] di/dt [A/us]

©2002 Fairchild Semiconductor Corporation SGL160N60UFD Rev. B1 SGL160N60UFD Package Dimension 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 4.90 ±0.20 20.00 ±0.20 (8.30) (8.30) (1.00) (0.50) (2.00) (7.00) (R1.00) (R2.00) ø3.30 ±0.20 (7.00) (1.50) (1.50) (1.50) 2.80 ±0.30 1.00+0.25 –0.10 0.60+0.25 –0.10 1.50 ±0.20 5.00 ±0.20 3.50 ±0.20 2.50 ±0.10 (9.00) (9.00) (2.00) (1.50) (0.15) (2.80) (4.00) (11.00) TO-264 Dimensions in Millimeters

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Product Information

G160N60 specifications and overview.

Summary

Ultrafast IGBT

Description

Ultrafast IGBT

Source title G160N60 Datasheet(PDF) - Fairchild Semiconductor

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