STGB15M65DF2_V01 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 19
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 D²PAK (TO-263) type A package information
- 4.2 D²PAK type A packing information
- 5 Revision history
Features
6 μs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 °C
Applications
Motor control UPS PFC General purpose inverter
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB15M65DF2 G15M65DF2 D²PAK Tape and reel TAB D²PAK
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC Continuous collector current at TC = 25 °C 30 A Continuous collector current at TC = 100 °C 15 ICP(1) Pulsed collector current 60 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 30 A Continuous forward current at TC = 100 °C 15 IFP(1) Pulsed forward current 60 A PTOT Total dissipation at TC = 25 °C 136 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature range - 55 to 175 °C Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 1.1 °C/W RthJC Thermal resistance junction-case diode 2.08 RthJA Thermal resistance junction-ambient 62.5
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 250 μA 650 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 15 A 1.55 2.0 V VGE = 15 V, IC = 15 A, TJ = 125 °C 1.9 VGE = 15 V, IC = 15 A, TJ = 175 °C 2.1 VF Forward on-voltage IF = 15 A 1.7 2.6 V IF = 15 A, TJ = 125 °C 1.5 IF = 15 A, TJ = 175 °C 1.4 VGE(th) Gate threshold voltage VCE = VGE, IC = 500 µA 5 6 7 V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 µA Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V - 1250 - pF Coes Output capacitance - 80 - Cres Reverse transfer capacitance - 25 - Qg Total gate charge VCC = 520 V, IC = 15 A, VGE = 0 to 15 V (see Figure 30: " Gate charge test circuit") - 45 - nC Qge Gate-emitter charge - 11 - Qgc Gate-collector charge - 15 -
Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 15 A, VGE = 15 V, RG = 12 Ω (see Figure 29: " Test circuit for inductive load switching" ) 24 - ns tr Current rise time 7.8 - ns (di/dt)on Turn-on current slope 1570 - A/µs td(off) Turn-off-delay time 93 - ns tf Current fall time 106 - ns Eon(1) Turn-on switching energy 0.09 - mJ Eoff(2) Turn-off switching energy 0.45 - mJ Ets Total switching energy 0.54 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 15 A, VGE = 15 V, RG = 12 Ω, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) 24.8 - ns tr Current rise time 9.2 - ns (di/dt)on Turn-on current slope 1300 - A/µs td(off) Turn-off-delay time 96 - ns tf Current fall time 169 - ns Eon(1) Turn-on switching energy 0.22 - mJ Eoff(2) Turn-off switching energy 0.61 - mJ Ets Total switching energy 0.83 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 µs VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 15 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 29: " Test circuit for inductive load switching") - 142 - ns Qrr Reverse recovery charge - 525 - nC Irrm Reverse recovery current - 13.4 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 790 - A/µs Err Reverse recovery energy - 64 - µJ trr Reverse recovery time IF = 15 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") - 241 - ns Qrr Reverse recovery charge - 1690 - nC Irrm Reverse recovery current - 20 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 420 - A/µs Err Reverse recovery energy - 176 - µJ
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current
Figure 28: Thermal impedance for diode
Test circuits STGB15M65DF2
3 Test circuits
Figure 29: Test circuit for inductive load switching Figure 30: Gate charge test circuit Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform A A C E G B RG+ G C 3.3 µF 1000 µF L=100 µH VCC E D.U.T B AM015 04v1 t AM01507v1 10% VRRM dv/dt di/dt IRRM IF trr ts tf Qrr IRRM
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 D²PAK (TO-263) type A package information
Figure 33: D²PAK (TO-263) type A package outline
Table 8: D²PAK (TO-263) type A package mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 10.40 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.40 V2 0°
Figure 34: D²PAK (TO-263) type A recommended footprint (dimensions are in mm)
4.2 D²PAK type A packing information
Figure 35: D2PAK type A tape outline
Figure 36: D2PAK type A reel outline Table 9: D²PAK type A tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3
5 Revision history
Table 10: Document revision history Date Revision Changes 14-Oct-2015 1 First release. 13-Nov-2015 2 Document status promoted from preliminary to production data. 22-Aug-2016 3 Updated Table 2: "Absolute maximum ratings" and Table 6: "IGBT switching characteristics (inductive load)". Updated Figure 16: "Switching energy vs. collector current", Figure 17: "Switching energy vs. gate resistance", Figure 18: "Switching energy vs. temperature" and Figure 19: "Switching energy vs. collector emitter voltage". Changed Figure 11: "Diode VF vs. forward current". 04-May-2017 4 Modified: title, features and applications on cover page. Modified Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 7: "Diode switching characteristics (inductive load)". Updated Section 4: "Package information". Minor text changes.