G150SPBK06P3H

G150SPBK06P3H IRF | Alldatasheet

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www.irf.com 1 06/03/09 Features: /G110Rugged, Light Weight near Hermetic Package with Integrated Power Terminals /G110Gen IV IGBT Technology /G110Soft Recovery Rectifier Diodes /G110Ultra Low Thermal Resistance /G110Zener Gate Protection Diodes /G110Very Low Conduction and Switching Losses /G110-55°C to +125°C Operation /G110Screening to meet the intent of MIL-PRF-38534 /G110Short Circuit Capability /G1102.0 Ohms Series Gate Resistor /G110High Altitude Operation, 85,000 Feet Above Sea Level at Rated Voltage HiRelTM INT-A-Pak 3, PLASTIC G150SPBK06P3H FULL-BRIDGE IGBT MODULE The HiRel TM INT-A-Pak series are isolated near hermetic power modules which combine the latest IGBT and Soft Recovery Rectifier Technology. They use both high-speed and low Vce(sat) IGBT for ultra low thermal resistance.The G150SPBK06P3H consists of six IGBTs and six FREDs in a full-bridge configuration and has an SCR inrush current limiter. HiRelTM INT-A-Pak 3 /c99/c3 Thermal Resistance measurements are at Steady State condition. Thermal-Mechanical Specifications Parameter Symbol Min Typ Max Units IGBT Thermal Resistance, Junction to Case, per Switch /c99 -0 . 2 0.24 Inverter Bridge Diode Thermal Resistance, Junction to Case, per Switch /c99 -0 . 3 8 0.45 Regen Diode Thermal Resistance, Junction to Case, per Switch /c99 -0 . 6 0.80 SCR Thermal Resistance, Junction to Case /c99 -0 . 2 1 0.27 Operating Junction Temperature Range TJ -55 - 150 Storage Temperature Range TSTG -55 - 125 Screw Torque - Mounting Screw Torque - Terminals Module Weight -- 4 1 0 g RthJC °C/W T2 6 i n - l b s-- Product Summary Part Number VCE IC G150SPBK06P3H 600V 150A 2.3V Typ. 2.6V Max. VCE(SAT) PD-97398

2 www.irf.com G150SPBK06P3H Absolute Ratings Module Characteristics Symbol Parameter Test Conditions Ratings Units t = 1 min @ sea level VRMS Voltage Isolation Terminals to Case 2,500 V (All terminals shorted together) TC Operating Case Temperature TSTG Storage Temperature IGBT Characteristics Symbol Parameter Test Conditions Ratings Units VCE(BR) IGBT Collector to Emitter Breakdown Voltage VGE = 0V, TJ = +25°C to +150°C 600 VCG Collector to Gate Voltage 600 V VGE Gate to Emitter Voltage± 2 0 ICC Collector Current Continuous VGE = 15V, TC = +25°C 150 ICM Collector Current Pulsed TP = 1.0ms, TC = +25°C 300 TSC Short Circuit Withstand Time VCE = 400V, VGE = 15V, TJ = +150°C 10 (min) µs TJ Operating Junction Temperature -55 to +150 °C Diode Characteristics Symbol Parameter Test Conditions Ratings Units VDRM / VRRM Max. Repetitive Peak and Off-state Voltage TJ = +125°C 600 V IF Forward Current TC = +25°C 150 /c99 IFM Forward Surge Current TP = 1.0ms, TC = +25°C 300 /c99 TJ Operating Junction Temperature -55 to +150 °C SCR Characteristics Symbol Parameter Test Conditions Ratings Units VDRM / VRRM Max. Repetitive Peak and Off-state Voltage TJ = +25°C 600 V IT(DC) Max. Continuous Forward Current TJ = +80°C 100 ITSM Max. Peak Surge Current 1/2 Cycle @ 60Hz 500 TJ Operating Junction Temperature -55 to +150 °C A -55 to +125 °C TJ = +25°C to +150°C A A /c99/c3 Current ratings apply to the free wheeling diodes and not the regen diodes

www.irf.com 3 G150SPBK06P3H Static Characteristics Module Symbol Parameter Test Conditions Min Typ Max Units RI Insulation Resistance From all Pins to Case, V = 500VDC 10 - - MΩ IGBT Symbol Parameter Test Conditions Min Typ Max Units ICES Collector Current VCE = VCES, VGE = 0V -- 1.0 mA IGES Gate Leakage Current VGE = VGES, VCE = 0V - - 10 µA VGE(th) Gate-Emitter Threshold Voltage IC = 15mA, VCE = 10V 4.0 5.4 8.1 IC = 150A, VGE = 15V - 2.3 2.6 V IC = 75A, VGE = 15V -1 . 8 2.1 Diode Symbol Parameter Test Conditions Min Typ Max Units Bridge Diodes, IE = 150A, VGE = 0V -1 . 8 2.1 Regen Diodes, IE = 50A, VGE = 0V - - 2.4 SCR Symbol Parameter Test Conditions Min Typ Max Units IRRM Max. Peak Reverse Leakage Current VRRM = 600V - - 15 IDRM Max. Peak Off-state Leakage Current VDRM = 600V -- 15 IF = 100A - - 1.35 IF = 50A -- 1.15 IH Holding Current DC Method, Bias Condition C - 200 300 mA Dynamic Characteristics IGBT Symbol Parameter Test Conditions Min Typ Max Units QG Total Gate Charge VCC = 300V, IC = 150A, VGE = 15V - - 1600 nC td(on) Turn On Delay Time VCC = 300V, IC = 150A -- 1200 ns tr Rise Time VGE1 = VGE2 = 15V - - 850 ns td(off) Turn Off Delay Time RG = 20Ω, Turn-on -- 2.1 µs tf Fall Time R G = 10Ω, Turn-off - - 300 ns Diode Symbol Parameter Test Conditions Min Typ Max Units trr Diode Reverse Recovery Time IE = 150A, di/dt = 300A/µs Min - - 170 ns Qrr Diode Reverse Recovery Charge Bridge Diodes only - - 9.0 µC VCE(sat) Collector-Emitter Saturation Voltage Forward On-state Voltage VFM Diode Forward Voltage V V mA VTM

4 www.irf.com G150SPBK06P3H Case Outline- HiRelTM INT-A-Pak 3 Notes: 1) All dimensions are in inches 2) Unless otherwise specified, Tolerances .XX = ±0.01, .XXX = ±0.005 Circuit Diagram - HiRelTM INT-A-Pak 3 ER DC(-) GR VR8 VR7 R4 SCR A REG SCR C SCR G SCR A DC(+) SCRQ8 E2A VR9 VR10 G2A E1A G1A VR5 VR6 D1Q1 A E2B VR12 VR11 VR3 G2B E1B VR4 G1B B E2C VR13 VR14 G2C E1C G1C VR1 VR2 C R3 R2 R1 R7R6R5 D7 D5 22 2 22 2

www.irf.com 5 G150SPBK06P3H WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Data and specifications subject to change without notice. 06/2009 Part numbering Nomenclature G 150 SP B K 06 P3 H IGBT Module Current Capability 150 = 150 Amps Generation IGBT / FWD Configuration B = GEN 4 / GEN 3 Screening Level H = Military Grade Screened per MIL-PRF-38534 Voltage 06 = 600V Circuit Configuration SP = Seven Plus IGBT Speed / SC Capability K = Fast, SC Capable Package Type P3 = HiRelTM INT-A-Pak 3