HGTG12N60C3D ONSEMI | Alldatasheet
Document overview
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- PDF pages: 9
Technical content
Features
- 24 A, 600 V at TC = 25°C
- Typical Fall Time 210 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti−Parallel Diode
- This is a Pb−Free Device MARKING DIAGRAM See detailed ordering and shipping information on page 7 of this data sheet.
ORDERING INFORMATION
G E C TO−247−3LD SHORT LEAD CASE 340CK JEDEC STYLE $Y = onsemi Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code G12N60C3D = Specific Device Code $Y&Z&3&K G12N60C3D CE G
www.onsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Parameter Symbol HGTG12N60C3D Unit Collector to Emitter Voltage BVCES 600 V Collector Current Continuous At T C = 25°C At T C = 110°C IC25 IC110 A A Average Diode Forward Current at 110°C I(AVG) 15 A Collector Current Pulsed (Note 1) ICM 96 A Gate to Emitter Voltage Continuous VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Switching Safe Operating Area at TJ = 150°C SSOA 24 A at 600 V Power Dissipation Total at TC = 25°C PD 104 W Power Dissipation Derating TC > 25°C 0.83 W/°C Operating and Storage Junction Temperature Range TJ, TSTG −40 to 150 °C Maximum Lead Temperature for Soldering TL 260 °C Short Circuit Withstand Time (Note 2) at VGE = 15 V tSC 4 /C0109s Short Circuit Withstand Time (Note 2) at VGE = 10 V tSC 13 /C0109s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V CE(PK) = 360 V, TJ =125°C, RG = 25 /C0087 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector to Emitter Breakdown Voltage BVCES IC = 250 /C0109A, VGE = 0 V 600 − − V Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25°C − − 250 /C0109A VCE = BVCES TC = 150°C − − 2.0 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15 V TC = 25°C − 1.65 2.0 V TC = 150°C − 1.85 2.2 V IC = 15 A, VGE = 15 V TC = 25°C − 1.80 2.2 V TC = 150°C − 2.0 2.4 V Gate to Emitter Threshold Voltage VGE(TH) IC = 250 /C0109A, VCE = VGE TC = 25°C 3.0 5.0 6.0 V Gate to Emitter Leakage Current IGES VGE = ±20 V − − ±100 nA Switching SOA SSOA TJ = 150°C, VGE = 15 V, RG = 25 /C0087, L = 100 /C0109H VCE(PK) = 480 V 80 − − A VCE(PK) = 600 V 24 − − A Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES − 7.6 − V On−State Gate Charge QG(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15 V − 48 55 nC VGE = 20 V − 62 71 nC Current Turn−On Delay Time td(ON)I TJ = 150°C, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15 V, RG = 25 /C0087, L = 100 /C0109H − 14 − ns Current Rise Time trI − 16 − ns Current Turn−Off Delay Time td(OFF)I − 270 400 ns Current Fall Time tfI − 210 275 ns Turn−On Energy EON − 380 − /C0109J Turn−Off Energy (Note 3) EOFF − 900 − /C0109J Diode Forward Voltage VEC IEC = 12 A − 1.7 2.0 V
www.onsemi.com HANDLING PRECAUTIONS FOR IGBTs Insulated Gate Bipolar Transistors are susceptible to gate−insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD/C0116 LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means, for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate V oltage Rating − Never exceed the gate−voltage rating of V GEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination − The gates of these devices are essentially capacitors. Circuits that leave the gate open−circuited or floating should be avoided. These conditions can result in turn−on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection − These devices do not have an internal monolithic Zener Diode from gate to emitter. If gate protection is required an external Zener is recommended. OPERATING FREQUENCY INFORMATION Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows f MAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f MAX1 is defined by fMAX1 = 0.05 / (tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on −state time for a 50% duty factor. Other definitions are possible. t D(OFF)I and tD(ON)I are defined in Figure 21. Device turn −off delay can establish an additional frequency limiting condition for an application other than T JM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON). The allowable dissipation (PD) is defined by P D = (TJM − TC) / R/C0113JC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (P C) are approximated by PC = (VCE x ICE) / 2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (I CE x V CE) during turn −on and E OFF is the integral of the instantaneous power loss during turn−off. All tail losses are included in the calculation for E OFF; i.e. the collector current equals zero (ICE = 0). Part Number Package Brand Shipping HGTG12N60C3D TO−247 G12N60C3D 450 Units / Tube NOTE: When ordering, use the entire part number. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
TO−247−3LD SHORT LEAD CASE 340CK ISSUE A DATE 31 JAN 2019 XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX E D (3X) b (2X) b2 (2X) e Q L
0.25 M BA M
A A c B S P 213 2 DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82 D1 13.08 ~ ~ D2 0.51 0.93 1.35 E 15.37 15.62 15.87 E1 12.81 ~ ~ E2 4.96 5.08 5.20 e ~ 5.56 ~ L 15.75 16.00 16.25 L1 3.69 3.81 3.93 P 3.51 3.58 3.65 P1 6.60 6.80 7.00 Q 5.34 5.46 5.58 S 5.34 5.46 5.58 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13851GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−247−3LD SHORT LEAD © Semiconductor Components Industries, LLC, 2018 www.onsemi.com
onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales