G1033-024 EMCORE | Alldatasheet

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Technical content

Features

Advanced Digital Chip Design Wide Operating Temperature Range: -25 to +85°C Telcordia Technologies™ 468 Compliant RoHS Compliant EMCORE’s G1033-024, 1310 nm GPON DFB laser diode chip is designed to provide the source laser for uncooled PON applications for triple-play for voice, video and data applications. It is designed to perform the O/E and E/O conversion in a PON or GPON system. Performance Highlights Parameter Min Typical Max Units Wavelength 1310 nm Operating Temperature Range -25 +25 +85 °C Optical Output Power - - 50 mW Side Mode Suppression Ratio (SMSR) 52 - - dB Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated for extended periods of time may effect device reliability. Parameter Symbol Condition Min Max Unit Operating Temperature Range Top Continuous -25 +85 °C Storage Temperature Range TSTG Continuous -25 +100 °C Optical Output Power Po Continuous - 50 mW Laser Reverse Voltage Vr Continuous - 1 V Continuous Operating Current Iop Continuous - 200 mA ESD Susceptibility - - - 500 V 1 Based on human-body model of R = 1500 Ohm and C = 100 pF. In general, ESD precautions should be taken to avoid damage to the device G1033-024, 1310 nm GPON DFB Laser Chip

DATASHEET | SEPTEMBER 2015 FIBER OPTICS | REV 2015.09 Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice. Chip Electrical/Optical Performance Characteristics Parameter Symbol Condition Min Typ Max Unit Operating Temperature T op - -25 +25 +85 °C Optical Output Power PO Continuous - - 50 mW Threshold Current I TH +25°C +85°C - 7 45 mA Slope Efficiency η +25°C +85°C 0.3 0.2 0.4 - mW/mA DC Resistance R +25°C - 4.5 8.1 Ω Operating Voltage VOP - - 1.3 1.5 V Central Wavelength λ At Ith+20mA 1290 1310 1330 nm Side Mode Suppression Ratio SMSR - 30 40 - dB Beam Divergence Angle, Vertical - Full Width, Half Max 30 34 deg Beam Divergence Angle, Horizontal - Full Width, Half Max 10 24 27 deg Laser Reverse Voltage V r - 1 - - V Laser Operating Current2 Iop + 25°C - - 100 mA

1 Unless otherwise specified

G1033-024, 1310 nm GPON DFB Laser Chip

DATASHEET | SEPTEMBER 2015 FIBER OPTICS | REV 2015.09 Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.

Ordering Information

Part number: G1033-024 Laser Safety This product meets the appropriate standard in Title 21 of the Code of Federal Regulations (CFR). FDA/CDRH Class 1M laser product. This device has been classified with the FDA/CDRH under accession number 0220309. All Versions of this laser are Class 1M laser product, tested according to IEC 60825-1:2007/EN 60825-1:2007 Single-mode fiber pigtail with SC/APC connectors (standard). Wavelength = 1.5 μm. Maximum power = 30 mW. Because of size constraints, laser safety labeling (including an FDA class 1M label) is not affixed to the module, but attached to the outside of the shipping carton. Product is not shipped with power supply. Caution: Use of controls, adjustments and procedures other than those specified herein may result in hazardous laser radiation exposure. G1033-024, 1310 nm GPON DFB Laser Chip