G1003A-SOT23-3L YFWDIODE | Alldatasheet
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Technical content
Description
The G1003A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply Absolute Maximum Ratings (T A =25℃℃ ℃℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 5 A Drain Current-Pulsed (Note 1) I DM 24 A Maximum Power Dissipation P D 3 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 41.7 /W℃ Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250µA 100 105 - V Zero Gate Voltage Drain Current I DSS V DS =80V, V GS A 800 n =0V - - It is ESD protected. It is ESD protected. It is ESD protected. D G S V D S S R D S O N I D 135 A 10V @ (typ) Ωm100V G1003A G S D Simplified outline(SOT23-3L) Schematic diagram Marking G1003A Marking www.yfwdiode.com
Gate-Body Leakage Current I GSS V GS =±20V,V DS On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250µ Drain-Source On-State Resistance R DS(ON) V GS =10V, I D Ω Forward Transconductance g FS V DS =5V,I D =2.9A - 8 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 690 - PF Output Capacitance C oss - 120 - PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz - 90 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 7.4 - nS Turn-Off Delay Time t d(off) - 35 - nS Turn-Off Fall Time t f V DD =30V,I D =2A,R L =15Ω V GS =10V,R G =2.5Ω - 9.1 - nS Total Gate Charge Q g - 15.5 nC Gate-Source Charge Q gs - 3.2 - nC Gate-Drain Charge Q gd V DS =30V,I D =3A, V GS =10V - 4.7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =6A - - 1.2 V Diode Forward Current (Note 2) I S - - 6 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production =5A - 135 145 m A 1 2 3 V =0V - - ±30 uA G1003A www.yfwdiode.com
1）） ））E AS test circuit 2）） ））Gate charge test circuit 3）） ））Switch Time Test Circuit G1003A www.yfwdiode.com
Typical Electrical and Thermal Characteristics (curves) Figure1. Source-Drain Diode Forward Voltage Figure2. Safe operating area Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance Figure6. R DS(ON) vs Junction Temperature G1003A www.yfwdiode.com
Figure7. BV DSS vs Junction Temperature Figure8. V GS(th) vs Junction Temperature Figure9. Gate charge waveforms Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance G1003A www.yfwdiode.com