FXT603 ZETEX | Alldatasheet
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Technical content
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 MARCH 94
FEATURES
- 80 Volt V CEO * Gain of 2K at I C=1 Amp *P tot= 1 Watt
APPLICATIONS
- Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX603 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL V ALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 10 V Peak Pulse Current I CM 4A Continuous Collector Current I C 1A Power Dissipation at T amb=25°C P tot 1W Operating and Storage Temperature Range T j:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 100 V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 V I C=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=100µA, IC=0 Collector Cut-Off Current ICBO 0.01 µA µA VCB=80V, IE=0 VCB=80V,T/G61/G6d/G62 =100°C Emitter Cut-Off Current I EBO 0.1 µA VEB=8V, IC=0 Colllector-Emitter Cut-Off Current ICES 10 µA VCES=80V Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.0 V V IC=0.4A, IB=0.4mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 V I C=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 V IC=1A, V CE=5V* Static Forward Current Transfer Ratio hFE 2000 5000 2000 500 100K IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* Transition Frequency fT 150 MHz I C=100mA, VCE=10V f=20MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% E-Line TO92 Compatible FXT603 3-43 B C E