FXLP4555 ONSEMI | Alldatasheet
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© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FXLP4555 Rev. 1.0.0 FXLP4555 — 1.8V / 3.0V SIM Card Power Supply and Level Shifter FXLP4555 1.8V / 3.0V SIM Card Power Supply and Level Shifter
Features
Supports 1.8V or 3.0V SIM Cards LDO Supplies >50mA Under 1.8V and 3.0V Built-in Pull-up Resistor for I/O Pin in Both Directions ESD Protection: 8kV (Human Body Model, According to ISO-7816 Specifications) Supports Clock 5MHz Supports “Clock Stop” Power Management per ISO7816-3 Specifications Low-Profile 3x3mm MLP-16 Package
Applications
SIM Card Interface Circuit for 2G, 2.5G, and 3G Mobile Phones Identification Module Smart Card Readers Wireless PC Cards
Description
The FXLP4555 is a level-shifter analog circuit designed to translate the voltages between a SIM card and an external baseband. A built-in LDO-type DC-DC converter allows the FXLP4555 to drive 1.8V and 3.0V SIM cards. The device fulfills the ISO7816-3 smart-card interface standard as well as GSM 11.11 (11.12 and 11.18) and 3G mobile requirements (IMT-2000/3G UICC standard). The EN pin enables a low-current Shutdown Mode that extends battery life. The card power supply voltage (VCC_C) is selected using a single pin (VSEL).
Ordering Information
Mark Package Packing Method FXLP4555MPX -40 to +85°C FXLP 4555 16-Lead,MLP,Quad,JEDEC MO-220,3MM Square
3000 Units
on Tape & Reel
Figure 1. Typical Application Figure 2. Block Diagram
3 VCCA
Figure 3. Pin A ssignments (Top View)
1 EN INPUT
2 VSEL INPUT The signal present on this pin programs the SIM_VCC value:
VSEL=LOW → SIM_VCC=1.8V; VSEL=HIGH → SIM_VCC=3V.
3 VCCA POWER
disabled and FXLP4555 enters Shutdown Mode. 4 NC No connect. It is recomme nded to solder to PCB GND. needs to be bypassed by a 0.1µF capacitor. 6 NC No connect. It is recomme nded to solder to PCB GND.
7 VCC_C POWER
programmable by the external baseband to supply either 1.8V or 3.0V output voltage. 3.0V value, or can start directly at either of these values.
8 I/O_C INPUT/
(typical) pull-up resistor provides a high-impedance state for the SIM card I/O link. external reset (RST) signal to the SIM card. taken to avoid voltage spikes when the device operates in normal operation.
11 CLK_C OUTPUT
12 NC No connect. It is recomme nded to solder to PCB GND.
13 CLK_H INPUT
translates the input signal to the external SIM card CLK input.
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FXLP4555 Rev. 1.0.0 4 FXLP4555 — 1.8V / 3.0V SIM Card Power Supply and Level Shifter Pin Definitions (Continued) Pin Name Type Description
14 RST_H INPUT
The RESET signal present at this pin is connected to the SIM card through the internal level shifter, which translates the level according to the VCC_C programmed value.
15 I/O_H INPUT/
This pin is connected to the baseband. A bidirectional level translator adapts the serial I/O signal between the smart card and the baseband. A built-in constant 18kΩ (typical) resistor provides a high-impedance state when not activated. 16 NC No connect. It is recomme nded to solder to pcb GND.
17 Exposed
DAP Ground Must be soldered to PCB ground plane.
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FXLP4555 Rev. 1.0.0 5 FXLP4555 — 1.8V / 3.0V SIM Card Power Supply and Level Shifter Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may dam age the device. The device may not function or be operable above the recommended operating conditions and stressi ng the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=+25°C. Symbol Parameter Min. Typ. Max. Unit VBAT LDO Power Supply Voltage -0.5 V BAT 6.0 V VCCA Power Supply from Baseband Side -0.5 V CCA 6.0 V VCC_C External Card Power Supply -0.5 V CC_C 6.0 V VIN Digital Input Pin Voltage -0.5 V IN VCCA+0.5, but <6.0 V IIN Digital Input Pin Current -5 +5 mA VOUT Digital Output Pin Voltage -0.5 V OUT VCCA+0.5, but <6.0 V IOUT Digital Output Pin Current -10 +10 mA VOUT_SIM SIM Card Output Pin Voltage -0.5 V OUT SIM_VCC+ 0.5<6.0 V IOUT_SIM SIM Card Output Pin Current (1) 15 mA PD Power Dissipation at T A=+85°C 440 mW ΘJA Thermal Resistance, Junction-to-Air 72 °C/W TA Operating Ambient Temper ature Range -40 +85 °C TJ Operating Junction Temperature Range -40 +125 °C TJMAX Maximum Junction Temperature +125 °C TSTG Storage Temperature Range -65 +150 °C ESD Electrostatic Discharge Capability Human Body Model, JESD22-A114 R=1500Ω, C=100pF SIM Card Pins (7,8,9,10,11) 8000 V All Other Pins 2000 Charged Device Model, JESD22-C101 SIM Card Pins (7,8,9,10,11) 2000 All Other Pins 600 Moisture Sensitivity Level 1 Level Notes: 1. Internally limited. 2. Meets or exceeds JEDEC specif ication EIA/JESD78 IC latchup test.
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FXLP4555 Rev. 1.0.0 6 FXLP4555 — 1.8V / 3.0V SIM Card Power Supply and Level Shifter
Electrical Characteristics
TA=-40°C to +85°C. Device meets the s pecifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained trans verse airflow greater than 500l fpm. Electrical parameters are guaranteed only over the declared oper ating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are appli ed individually under normal operating conditions and not valid simultaneously. Symbol Parameter Condition Min. Typ. Max. Unit Power Supply Section VBAT Power Supply 2.7 5.5 V I VBAT Operating Current ICC=0mA, VBAT > 3.0V if VSEL=1 or VBAT > 2.7V if VSEL=0 16 25 µA I VBAT_SD Shutdown Current EN=Low 3 µA VCCA Operating Voltage 1.65 5.50 V IVCCA Operating Current(3) fCLK=1MHz 7 12 µA IVCCA_SD Shutdown Current EN=Low 1 µA VCCA Under-Voltage Lockout 0.6 1.5 V VCC_C SIM Card Supply Voltage VSEL=High, VBAT=3.0V, IVCC_C=50mA 2.8 V VSEL=High, VBAT=3.3V – 5.5V, IVCC_C=0mA - 50mA 2.8 3.0 3.2 VSEL=Low, VBAT=2.7V – 5.5V, IVCC_C=0mA - 50mA 1.7 1.8 1.9 IVCC_C_SC Short-Circuit Current VCC_C Shorted to Ground, TA=25°C 175 mA Digital Input / Output Section (CLK, RST, I/O, EN, VSEL) VIN Input Voltage Range EN, VSEL, RST_H, CLK_H, I/O_H 0 V CCA V IIH, IIL Input Current EN, VSEL, RST_H, CLK_H -100 100 nA VIH High Level Input Voltage RST_H, CLK_H, EN, VSEL 0.7 VCCA VCCA V VIL Low Level Input Voltage RST_H, CLK_H 0.2 * VCCA V EN, VSEL 0 0.4 VOH_I/O High Level Output Voltage I/O_C=VCC_C, IOH_I/O=-20µA 0.7 VCCA V CCA V VOL_I/O Low Level Output Voltage I/O_C=0 V, IOL_I/O=200µA 0 0.4 V IIH High Level Input Current I/O -20 20 µA IIL Low Level Input Current I/O 1.0 mA Rpu_I/O_H I/O Pull-Up Resistor 12 18 24 k Ω Continued on the following page…
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FXLP4555 Rev. 1.0.0 7 FXLP4555 — 1.8V / 3.0V SIM Card Power Supply and Level Shifter Electrical Characteristics (Continued) Symbol Parameter Condition Min. Typ. Max. Unit SIM Interface Section(4) RST_C VCC_C =+3.0V (VSEL=HIGH) Output RST_C VOH at IRST_C=-20µA 0.9 VCC_C V CC_C V Output RST_C VOL at IRST_C=+200µA 0 0.4 V Output RST_C Rise Time at COUT=30pF (10% - 90%)(3) 1 µs Output RST_C Fall Time at COUT=30pF (90% - 10%)(3) 1 µs VCC_C =+1.8V (VSEL=LOW) Output RST_C VOH at IRST_C=-20µA 0.9 VCC_C V CC_C V Output RST_C VOL at IRST_C=+200µA 0 0.4 V Output RST_C Rise Time at COUT=30pF (10% - 90%)(3) 1 µs Output RST_C Fall Time at COUT=30pF (90% - 10%)(3) 1 µs CLK_C VCC_C =+3.0V (VSEL=HIGH) Output Duty Cycle 40 60 % Maximum Output Frequency 5 MHz Output VOH at ICLK_C=-20µA 0.9 VCC_C V CC_C V Output VOL at ICLK_C=+200µA 0 0.4 V Output CLK_C Rise Time at COUT=30pF (10% - 90%)(3) 18 ns Output CLK_C Fall Time at COUT=30pF (90% - 10%)(3) 18 ns VCC_C =+1.8V (VSEL=LOW) Output Duty Cycle 40 60 % Maximum Output Frequency 5 MHz Output VOH at ICLK_C=-20µA 0.9 VCC_C V CC_C V Output VOL at ICLK_C=+200µA 0 0.4 V Output CLK _C Rise Time at COUT=30pF (10% - 90%)(3) 18 Ns Output CLK_C Fall Time at COUT=30pF (90% - 10%)(3) 18 ns Continued on the following page…
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FXLP4555 Rev. 1.0.0 8 FXLP4555 — 1.8V / 3.0V SIM Card Power Supply and Level Shifter Electrical Characteristics (Continued) Symbol Parameter Condition Min. Typ. Max. Unit I/O_C VCC_C=+3.0V (VSEL=HIGH) Output VOH at II/O_C=-20µA, VI/O=VDD 0.8 VCC_C V CC_C V Output VOL at II/O_C=+1mA, VI/O=0V 0 0.4 V I/O_C Rise Time at COUT=30pF I/O_C Fall Time at COUT=30pF VCC_C=+1.8V (VSEL=LOW) Output VOH at II/O_C=-20µA, VI/O=VDD 0.8 VCC_C V CC_C V Output VOL at II/O_C=+1mA, VI/O=0V 0 0.3 V I/O_C Rise Time at COUT=30Pf I/O_C Fall Time at COUT=30pF Rpu_I/O_C Card I/O Pull-Up Resistor 10 14 18 kΩ Notes: 3. Guaranteed by design over the spec ified operating temperature range. 4. All the dynamic specifications (AC s pecifications) are guaranteed by characterization over the specified operating temperature range, unless otherwise indicated.
pins are depicted in Figure 11. voltage required by the ISO7816 standard is 4kV. environment and to fully exploit its performance. is recommended to use ceramic capacitors. ground plane is recommended. SIM card VCC remains powered and RST at state H. Figure 12. Clock Stop 8.3 of the ISO7816-3 specification. 700 clock cycles (at time tf + th). Stop per ISO7816-3 specifications.
Figure 13. 16-Lead, Molded Leadless Package (MLP), QUAD, JEDEC MO-220, 3mm Square warranty therein, which covers Fairchild products. http://www.fairchildsemi.com/packaging/MLP16B.html. http://www.fairchildsemi.com/packaging/3x3MLP16_Pack_TNR.pdf.
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FXLP4555 Rev. 1.0.0 13 FXLP4555 — 1.8V / 3.0V SIM Card Power Supply and Level Shifter
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