FX20ASJ-06-T13

FX20ASJ-06 RENESAS | Alldatasheet

Document overview

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• PDF pages: 7

Technical content

Features

• Drive voltage : 4 V
• VDSS : – 60 V
• rDS(ON) (max) : 97 mΩ
• ID : – 20 A
• Integrated Fast Recovery Diode (TYP.) : 50 ns Outline (Package name: MP-3A) 1. Gate 2. Drain 3. Source 4. Drain 2, 4

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Symbol Ratings Unit Conditions Drain-source voltage VDSS –60 V V GS = 0 V Gate-source voltage VGSS ±20 V V DS = 0 V Drain current ID –20 A Drain current (Pulsed) IDM –80 A Avalanche drain current (Pulsed) I DA –20 A L = 100 µH Source current IS –20 A Source current (Pulsed) ISM –80 A Maximum power dissipation PD 35 W Channel temperature Tch – 55 to +150 °C Storage temperature Tstg – 55 to +150 °C Mass — 0.32 g Typical value

Rev.2.00 Aug 07, 2006 page 2 of 6

Electrical Characteristics

(Tch = 25°C) Parameter Symbol Min Typ Max Unit Test Conditions Drain-source breakdown voltage V (BR)DSS –60 — — V I D = –1 mA, VGS = 0 V Gate-source leakage current IGSS — — ±0.1 µA V GS = ±20 V, VDS = 0 V Drain-source leakage current IDSS — — –0.1 mA V DS = –60 V, VGS = 0 V Gate-source threshold voltage V GS(th) –1.3 –1.8 –2.3 V I D = –1 mA, VDS = –10 V Drain-source on-state resistance r DS(ON) — 73 97 m Ω I D = –10 A, VGS = –10 V Drain-source on-state resistance r DS(ON) — 119 166 m Ω I D = –10 A, VGS = – 4 V Drain-source on-state voltage V DS(ON) — –0.73 –0.97 V I D = –10 A, VGS = –10 V Forward transfer admittance | yfs | — 10.9 — S I D = –10 A, VDS = –10 V Input capacitance Ciss — 2370 — pF Output capacitance Coss — 306 — pF Reverse transfer capacitance Crss — 147 — pF VDS = –10 V, VGS = 0 V, f = 1MHz Turn-on delay time td(on) — 15 — ns Rise time tr — 37 — ns Turn-off delay time td(off) — 131 — ns Fall time tf — 72 — ns VDD = –30 V, ID = –10 A, VGS = –10 V, RGEN = RGS = 50 Ω Source-drain voltage VSD — –1.0 –1.5 V I S = –10 A, VGS = 0 V Thermal resistance Rth(ch-c) — — 3.57 °C/W Channel to case Reverse recovery time trr — 50 — ns I S = –20 A, dis/dt = 100 A/µs

Rev.2.00 Aug 07, 2006 page 3 of 6 Performance Curves Power Dissipation Derating Curve Case Temperature Tc (°C) Power Dissipation PD (W) Maximum Safe Operating Area Drain-Source Voltage VDS (V) Drain Current ID (A) Output Characteristics (Typical) Drain Current ID (A) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Drain Current ID (A) Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) Gate-Source Voltage VGS (V) Drain-Source On-State Voltage VDS(ON) (V) On-State Resistance vs. Drain Current (Typical) Drain Current ID (A) Drain-Source On-State Resistance rDS(ON) (mΩ) 0 20050 100 150 –10 –20 –30 –40 –50 PD = 35W VGS = –10V –6V –3V –4V –5V –8V –12 –16 –20 –6V –5V –4V –3V –8V –10V VGS = –100 –101 –102 tw = 10µs 100µs 1ms DC PD = 35W 120 160 200 VGS = –4V –10V –10 –40A ID = –10A –20A Tc = 25°C Single Pulse Tc = 25°C Pulse Test Tc = 25°C Pulse Test Tc = 25°C Pulse Test Tc = 25°C Pulse Test

Rev.2.00 Aug 07, 2006 page 4 of 6 Transfer Characteristics (Typical) Gate-Source Voltage VGS (V) Drain Current ID (A) Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) Forward Transfer Admittance | yfs | (S) Switching Characteristics (Typical) Drain-Source Voltage VDS (V) Capacitance vs. Drain-Source Voltage (Typical) Drain Current ID (A) Capacitance C (pF) Switching Time (ns) Gate-Source Voltage vs. Gate Charge (Typical) Gate Charge Qg (nC) Gate-Source Voltage VGS (V) Source-Drain Diode Forward Characteristics (Typical) Source-Drain Voltage VSD (V) Source Current IS (A) 101 102 100 101 102 25°C TC = 75°C 125°C –10 –20 –30 –40 –50 102 103 Ciss Coss Crss td(off) td(on) tr tf –10 0 1 02 03 04 05 0 VDS = –10V –20V –40V –10 –20 –30 –40 –50 125°C TC = 75°C 25°C Tc = 25°C VDS = –10V Pulse Test Tch = 25°C f = 1MHz V GS = 0V VDS = –10V Pulse Test Tch = 25°C VDD = –30V VGS = –10V RGEN = RGS = 50Ω VGS = 0V Pulse Test Tch = 25°C ID = –20A

Rev.2.00 Aug 07, 2006 page 5 of 6 Channel Temperature Tch (°C) Drain-Source On-State Resistance rDS(ON) (t°C) Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) On-State Resistance vs. Channel Temperature (Typical) Drain-Source On-State Resistance rDS(ON) (25°C) Channel Temperature Tch (°C) Transient Thermal Impedance Characteristics Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Pulse Width tw (s) Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Switching Time Measurement Circuit Switching Waveform RL VDD RGEN RGS Vin Monitor D.U.T. trtd(on) Vin 90% 90% 10% 10%Vout td(off) Vout Monitor 90% 10% tf 10–1 100 101 –50 0 50 100 150 0 –0.8 –1.6 –2.4 –3.2 –4.0 –50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 10–2 10–1 100 101 10–4 23 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D= T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse VGS = 0V ID = –1mA VGS = –10V ID = –10A Pulse Test VDS = –10V ID = –1mA

Rev.2.00 Aug 07, 2006 page 6 of 6 Package Dimensions SC-63 0.32g MASS[Typ.] PRSS0004ZA-A RENESAS CodeJEITA Package Code Previous Code Unit: mm 10.4Max 1Max 0.5 ± 0.2 0.1 ± 0.1 0.5 ± 0.2 0.760.76 ± 0.2 2.3 ± 0.2 5.3 ± 0.2 6.6 1.4 ± 0.2 6.1 ± 0.2 1 ± 0.2 2.3 2.5Min 2.3 Package Name MP-3A Order Code Lead form Standard packing Quantity Standard order code Standard order code example Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) +3 FX20ASJ-06-T13 Surface-mounted type Plastic Magazine (Tube)

75 Type name FX20ASJ-06

Note: Please confirm the specificati on about the shipping in detail.

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