FT04N15E GWSEMI | Alldatasheet
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This use advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Excellent package for good heat dissipation Maximum ratings (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 150 Gate-Source Voltage V GS ±20 V Continuous Drain Current I D Pulsed Drain Current(note1) I DM A Thermal Resistance from Junction to Ambient R θJA 125 ℃/W Junction Temperature T J 150 Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds T L 260 MARKING T04N15= Device code EQUIVALENT CIRCUIT V (BR)DSS R DS(on) MAX I D 150V 4A160mΩ@10V SOT-223 1. GATE 2. DRAIN 3. SOURCE 1 2 T04N15 151 Storage Temperature Range T STG -55 ~+150 151= C o d e Thermal Resistance from Junction to Case * RθJC 8.33 ℃/W * Device mounted on 1"×1" FR-4 PCB with high coverage 2oz Copper . Plastic-Encapsulate MOSFETS N-Channel Power MOSFET FT04N15E FT04N15E
Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250µA 150 Drain-source diode forward voltage(note2) V SD V GS = 0V, I S =2.0A 1.2 V Zero gate voltage drain current I DSS V DS =150V, V GS =0V 1 µA Gate-body leakage current (note2) I GSS V DS =0V, V GS =±20V ±100 nA On characteristics (note2) Gate-threshold voltage V GS(th) V DS GS , I D =250µA 1.5 2.0 2.5 V Static drain-source on-resistance R DS(on) V GS =10V, I D =4.0A 130 160 mΩ Forward transconductance g fs V DS =15V, I D =4A 5 S Dynamic characteristics (note 3) Input capacitance C iss 900 Output capacitance C oss 115 Reverse transfer capacitance C rss V DS =25V,V GS =0V,f =1MHz pF Switching characteristics (note 3) Total gate charge Q g Gate-source charge Q gs 5.5 Gate-drain charge Q gd V DS =75V,V GS =10V,I D =1.5A nC Turn-on delay time (note3) t d(on) Turn-on rise time (note3) t r Turn-off delay time (note3) t d(off) Turn-off fall time (note3) t f V DS =75V, V GS =10V, R G =6Ω, I D =1.0A,RL=75Ω ns Notes : 1. Repetitive Rating:Pulse width limited by maximum junction temperature. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified N-Channel Power MOSFET FT04N15E
0.01 0.1 0 5 10 15 20 123456 100 150 200 250 300 2468 10 100 200 300 400 500 0246 25 50 75 100 125 0.5 1.0 1.5 2.0 2.5 3.0 Pulsed Pulsed T a =100 V SD I S — — T a =25 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =4V,5V,6V V GS =3.2V V GS =3.5V Output Characteristics V GS =3V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) T a =25 Pulsed V GS =10V T a =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D ——R DS(ON) T a =100 T a =25 ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) V GS ——R DS(ON) I D =4A V DS =10V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a =100 T a =25 I D =250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T j ( ) N-Channel Power MOSFET FT04N15E Typical Characteristics
Min. Max. Min. Max. A1 0.020 0.100 0.001 0.004 A2 1.500 1.700 0.059 0.067 b 0.660 0.840 0.026 0.033 b1 2.900 3.100 0.114 0.122 c 0.230 0.350 0.009 0.014 D 6.300 6.700 0.248 0.264 E 6.700 7.300 0.264 0.287 E1 3.300 3.700 0.130 0.146 e θ 0° 10° 0° 10° Symbol Dimensions In Millimeters Dimensions In Inches 2.300(BSC) 0.091(BSC) N-Channel Power MOSFET FT04N15E Plastic surface mounted package; 3 leads SOT-223 PACKAGE OUTLINE